BR9815455A - Processo de estabilização de um laser semicondutor de realimentação distribuìda, laser semicondutor estabilizado de realimentação distribuìda, e, sistema de laser semicondutor estabilizado de realimentação distribuìda - Google Patents

Processo de estabilização de um laser semicondutor de realimentação distribuìda, laser semicondutor estabilizado de realimentação distribuìda, e, sistema de laser semicondutor estabilizado de realimentação distribuìda

Info

Publication number
BR9815455A
BR9815455A BR9815455-9A BR9815455A BR9815455A BR 9815455 A BR9815455 A BR 9815455A BR 9815455 A BR9815455 A BR 9815455A BR 9815455 A BR9815455 A BR 9815455A
Authority
BR
Brazil
Prior art keywords
semiconductor laser
distributed feedback
distributed
laser
semi
Prior art date
Application number
BR9815455-9A
Other languages
English (en)
Inventor
James R Palmer
Original Assignee
Silkroad Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silkroad Inc filed Critical Silkroad Inc
Publication of BR9815455A publication Critical patent/BR9815455A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/501—Structural aspects
    • H04B10/503—Laser transmitters
    • H04B10/505—Laser transmitters using external modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06821—Stabilising other output parameters than intensity or frequency, e.g. phase, polarisation or far-fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06837—Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)

Abstract

"PROCESSO DE ESTABILIZAçãO DE UM LASER SEMICONDUTOR DE REALIMENTAçãO DISTRIBUìDA, LASER SEMICONDUTOR ESTABILIZADO DE REALIMENTAçãO DISTRIBUìDA, E, SISTEMA DE LASER SEMICONDUTOR ESTABILIZADO DE REALIMENTAçãO DISTRIBUìDA". Um processo e um aparelho são fornecidos com a finalidade de estabilizar um laser semicondutor de realimentação distribuída. O processo inclui as etapas de comparar uma saída ótica de um primeiro modo de oscilação do laser semicondutor segundo um primeiro ângulo de polarização com uma saída ótica de um segundo modo de oscilação do laser semicondutor de acordo com um segundo ângulo de polarização ortogonal em relação ao primeiro ângulo de polarização. Um primeiro sinal de realimentação é fomecido para um controlador de temperatura da cavidade do laser semicondutor em resposta à diferenças detectadas no primeiro e segundo modos de oscilação comparados. O processo inclui ainda a etapa de comparar uma saída do laser de referência com uma saída do laser semicondutor e fomecer um sinal da diferença na forma de um segundo sinal de realimentação em resposta às diferenças detectadas entre o laser de referência e o laser semicondutor.
BR9815455-9A 1997-03-05 1998-02-24 Processo de estabilização de um laser semicondutor de realimentação distribuìda, laser semicondutor estabilizado de realimentação distribuìda, e, sistema de laser semicondutor estabilizado de realimentação distribuìda BR9815455A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/811,207 US5818857A (en) 1997-03-05 1997-03-05 Stabilized DFB laser
PCT/US1998/003579 WO1998039826A1 (en) 1997-03-05 1998-02-24 Stabilized dfb laser

Publications (1)

Publication Number Publication Date
BR9815455A true BR9815455A (pt) 2001-10-23

Family

ID=25205884

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9815455-9A BR9815455A (pt) 1997-03-05 1998-02-24 Processo de estabilização de um laser semicondutor de realimentação distribuìda, laser semicondutor estabilizado de realimentação distribuìda, e, sistema de laser semicondutor estabilizado de realimentação distribuìda

Country Status (11)

Country Link
US (1) US5818857A (pt)
EP (1) EP0998772A4 (pt)
JP (1) JP2002512735A (pt)
KR (1) KR20000075979A (pt)
CN (1) CN1186864C (pt)
AU (1) AU723599B2 (pt)
BR (1) BR9815455A (pt)
CA (1) CA2281776A1 (pt)
IL (1) IL131444A0 (pt)
NZ (1) NZ337412A (pt)
WO (1) WO1998039826A1 (pt)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002515181A (ja) 1996-06-05 2002-05-21 サーノフ コーポレイション 発光半導体装置
US6201820B1 (en) * 1997-03-05 2001-03-13 Silkroad, Inc. Optically modulated laser beam transceiver
US6088142A (en) * 1997-03-13 2000-07-11 Oplink Communications, Inc. System and method for precision wavelength monitoring
US6339606B1 (en) 1998-06-16 2002-01-15 Princeton Lightwave, Inc. High power semiconductor light source
US6097743A (en) * 1998-06-16 2000-08-01 Sarnoff Corporation Superluminescent diode and optical amplifier with wavelength stabilization using WDM couplers and back output light
WO2000001045A1 (en) * 1998-06-30 2000-01-06 Silkroad, Inc. Optically modulated laser beam transceiver
US6275516B1 (en) * 1998-07-02 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Article for detecting power drift in the putout of a diode array source
US6175446B1 (en) 1998-09-23 2001-01-16 Sarnoff Corporation Polarization-independent semiconductor optical amplifier
JP3737383B2 (ja) * 2001-05-21 2006-01-18 ユーディナデバイス株式会社 半導体レーザモジュール試験装置および半導体レーザモジュール試験方法
US7573688B2 (en) * 2002-06-07 2009-08-11 Science Research Laboratory, Inc. Methods and systems for high current semiconductor diode junction protection
GB0222944D0 (en) * 2002-10-04 2002-11-13 Renishaw Plc Laser system
GB2394848B (en) * 2002-11-02 2006-04-12 Bookham Technology Plc Optical communications apparatus
US7466925B2 (en) * 2004-03-19 2008-12-16 Emcore Corporation Directly modulated laser optical transmission system
US7505493B1 (en) 2005-02-10 2009-03-17 Science Research Laboratory, Inc. Methods and systems for semiconductor diode junction protection
US7592825B1 (en) 2005-08-22 2009-09-22 Science Research Laboratory, Inc. Methods and systems for semiconductor diode junction screening and lifetime estimation
US7684960B1 (en) 2006-10-18 2010-03-23 Science Research Laboratory, Inc. Methods and systems for semiconductor diode junction protection
CN102916339B (zh) * 2012-04-19 2016-08-17 广东工业大学 一种基于干涉条纹图像相位反馈的激光控制器装置及其方法
CN103308783B (zh) * 2013-05-23 2015-12-09 国家电网公司 基于dfb激光器的光学晶体电场传感器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4450565A (en) * 1982-08-23 1984-05-22 Bell Telephone Laboratories, Incorporated Spectrally stabilized laser
JP2546388B2 (ja) * 1989-08-31 1996-10-23 日本電気株式会社 半導体レーザ装置の発振周波数安定化装置
EP0618653B1 (en) * 1993-03-30 1997-07-16 Nec Corporation Frequency stabilization method of semiconductor laser and frequency-stabilized light source
US5604758A (en) * 1995-09-08 1997-02-18 Xerox Corporation Microprocessor controlled thermoelectric cooler and laser power controller

Also Published As

Publication number Publication date
CN1186864C (zh) 2005-01-26
EP0998772A1 (en) 2000-05-10
WO1998039826A1 (en) 1998-09-11
KR20000075979A (ko) 2000-12-26
IL131444A0 (en) 2001-01-28
NZ337412A (en) 2002-02-01
CN1249857A (zh) 2000-04-05
US5818857A (en) 1998-10-06
JP2002512735A (ja) 2002-04-23
EP0998772A4 (en) 2000-05-10
CA2281776A1 (en) 1998-09-11
AU6183998A (en) 1998-09-22
AU723599B2 (en) 2000-08-31

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Legal Events

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FA10 Dismissal: dismissal - article 33 of industrial property law
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]