BR9704972A - Diodo de circuito integrado - Google Patents
Diodo de circuito integradoInfo
- Publication number
- BR9704972A BR9704972A BR9704972A BR9704972A BR9704972A BR 9704972 A BR9704972 A BR 9704972A BR 9704972 A BR9704972 A BR 9704972A BR 9704972 A BR9704972 A BR 9704972A BR 9704972 A BR9704972 A BR 9704972A
- Authority
- BR
- Brazil
- Prior art keywords
- integrated circuit
- circuit diode
- diode
- integrated
- circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/726,456 US5757065A (en) | 1996-10-04 | 1996-10-04 | High voltage integrated circuit diode with a charge injecting node |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR9704972A true BR9704972A (pt) | 1999-01-26 |
Family
ID=24918676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR9704972A BR9704972A (pt) | 1996-10-04 | 1997-10-03 | Diodo de circuito integrado |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5757065A (pt) |
| EP (1) | EP0834928B1 (pt) |
| JP (1) | JP3803944B2 (pt) |
| BR (1) | BR9704972A (pt) |
| CA (1) | CA2216083C (pt) |
| DE (1) | DE69733235T2 (pt) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4854868B2 (ja) * | 2001-06-14 | 2012-01-18 | ローム株式会社 | 半導体装置 |
| US6639425B2 (en) | 2001-12-26 | 2003-10-28 | Xerox Corporation | Process and temperature compensation circuit for integrated RF switching |
| US6650151B2 (en) | 2001-12-26 | 2003-11-18 | Xerox Corporation | Process insensitive electronic driver circuitry for integrated RF switching diodes |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3035186A (en) * | 1959-06-15 | 1962-05-15 | Bell Telephone Labor Inc | Semiconductor switching apparatus |
| FR2108781B1 (pt) * | 1970-10-05 | 1974-10-31 | Radiotechnique Compelec | |
| DE2853292A1 (de) * | 1978-11-24 | 1980-06-12 | Bbc Brown Boveri & Cie | Optisch aktivierbares halbleiterbauelement |
| JPS58134479A (ja) * | 1982-02-03 | 1983-08-10 | Mitsubishi Electric Corp | Ｐｉｎダイオ−ド |
| FR2664744B1 (fr) * | 1990-07-16 | 1993-08-06 | Sgs Thomson Microelectronics | Diode pin a faible surtension initiale. |
| JPH05121684A (ja) * | 1991-10-25 | 1993-05-18 | Olympus Optical Co Ltd | 保護ダイオードを備えたｃｍｏｓ半導体装置 |
-
1996
- 1996-10-04 US US08/726,456 patent/US5757065A/en not_active Expired - Fee Related
-
1997
- 1997-09-22 CA CA002216083A patent/CA2216083C/en not_active Expired - Fee Related
- 1997-10-02 EP EP97307770A patent/EP0834928B1/en not_active Expired - Lifetime
- 1997-10-02 DE DE69733235T patent/DE69733235T2/de not_active Expired - Fee Related
- 1997-10-03 BR BR9704972A patent/BR9704972A/pt not_active Application Discontinuation
- 1997-10-06 JP JP27301097A patent/JP3803944B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10135490A (ja) | 1998-05-22 |
| JP3803944B2 (ja) | 2006-08-02 |
| EP0834928B1 (en) | 2005-05-11 |
| DE69733235D1 (de) | 2005-06-16 |
| CA2216083C (en) | 2001-11-13 |
| DE69733235T2 (de) | 2005-10-06 |
| CA2216083A1 (en) | 1998-04-04 |
| US5757065A (en) | 1998-05-26 |
| EP0834928A1 (en) | 1998-04-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
| B11B | Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements |