DE69733235D1 - Diode für integrierte Schaltung mit Ladungsinjektor - Google Patents

Diode für integrierte Schaltung mit Ladungsinjektor

Info

Publication number
DE69733235D1
DE69733235D1 DE69733235T DE69733235T DE69733235D1 DE 69733235 D1 DE69733235 D1 DE 69733235D1 DE 69733235 T DE69733235 T DE 69733235T DE 69733235 T DE69733235 T DE 69733235T DE 69733235 D1 DE69733235 D1 DE 69733235D1
Authority
DE
Germany
Prior art keywords
diode
integrated circuit
charge injector
injector
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69733235T
Other languages
English (en)
Other versions
DE69733235T2 (de
Inventor
Steven A Buhler
Jaime Lerma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of DE69733235D1 publication Critical patent/DE69733235D1/de
Application granted granted Critical
Publication of DE69733235T2 publication Critical patent/DE69733235T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE69733235T 1996-10-04 1997-10-02 Diode für integrierte Schaltung mit Ladungsinjektor Expired - Fee Related DE69733235T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/726,456 US5757065A (en) 1996-10-04 1996-10-04 High voltage integrated circuit diode with a charge injecting node
US726456 1996-10-04

Publications (2)

Publication Number Publication Date
DE69733235D1 true DE69733235D1 (de) 2005-06-16
DE69733235T2 DE69733235T2 (de) 2005-10-06

Family

ID=24918676

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69733235T Expired - Fee Related DE69733235T2 (de) 1996-10-04 1997-10-02 Diode für integrierte Schaltung mit Ladungsinjektor

Country Status (6)

Country Link
US (1) US5757065A (de)
EP (1) EP0834928B1 (de)
JP (1) JP3803944B2 (de)
BR (1) BR9704972A (de)
CA (1) CA2216083C (de)
DE (1) DE69733235T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4854868B2 (ja) * 2001-06-14 2012-01-18 ローム株式会社 半導体装置
US6639425B2 (en) 2001-12-26 2003-10-28 Xerox Corporation Process and temperature compensation circuit for integrated RF switching
US6650151B2 (en) 2001-12-26 2003-11-18 Xerox Corporation Process insensitive electronic driver circuitry for integrated RF switching diodes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3035186A (en) * 1959-06-15 1962-05-15 Bell Telephone Labor Inc Semiconductor switching apparatus
FR2108781B1 (de) * 1970-10-05 1974-10-31 Radiotechnique Compelec
DE2853292A1 (de) * 1978-11-24 1980-06-12 Bbc Brown Boveri & Cie Optisch aktivierbares halbleiterbauelement
JPS58134479A (ja) * 1982-02-03 1983-08-10 Mitsubishi Electric Corp Ｐｉｎダイオ−ド
FR2664744B1 (fr) * 1990-07-16 1993-08-06 Sgs Thomson Microelectronics Diode pin a faible surtension initiale.
JPH05121684A (ja) * 1991-10-25 1993-05-18 Olympus Optical Co Ltd 保護ダイオードを備えたｃｍｏｓ半導体装置

Also Published As

Publication number Publication date
US5757065A (en) 1998-05-26
BR9704972A (pt) 1999-01-26
CA2216083A1 (en) 1998-04-04
CA2216083C (en) 2001-11-13
JP3803944B2 (ja) 2006-08-02
EP0834928A1 (de) 1998-04-08
JPH10135490A (ja) 1998-05-22
DE69733235T2 (de) 2005-10-06
EP0834928B1 (de) 2005-05-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee