BR8207569A - Pelicula solida de mpx material solido estavel de alto teor de fosforo e de pelicula de polifosfeto dispositivo semicondutor e processo de obtencao do mesmo aparelho para transporte de vapor para deposicao de vapor para evaporacao instantanea e seus respectivos processos fosforo de alta pureza processos para formar fosforo para fazer material de polifosfetos e para preparacao de fosforo de alta pureza rotor otico material composto retardador de fogo de enchimento para revestimento otico e antireflexao adicao de impurezas - Google Patents
Pelicula solida de mpx material solido estavel de alto teor de fosforo e de pelicula de polifosfeto dispositivo semicondutor e processo de obtencao do mesmo aparelho para transporte de vapor para deposicao de vapor para evaporacao instantanea e seus respectivos processos fosforo de alta pureza processos para formar fosforo para fazer material de polifosfetos e para preparacao de fosforo de alta pureza rotor otico material composto retardador de fogo de enchimento para revestimento otico e antireflexao adicao de impurezasInfo
- Publication number
- BR8207569A BR8207569A BR8207569A BR8207569A BR8207569A BR 8207569 A BR8207569 A BR 8207569A BR 8207569 A BR8207569 A BR 8207569A BR 8207569 A BR8207569 A BR 8207569A BR 8207569 A BR8207569 A BR 8207569A
- Authority
- BR
- Brazil
- Prior art keywords
- phosphorus
- polyphosphetes
- fosts
- polyphosphide
- mpx
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/003—Phosphorus
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/02—Preparation of phosphorus
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/04—Purification of phosphorus
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/08—Other phosphides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/08—Other phosphides
- C01B25/081—Other phosphides of alkali metals, alkaline-earth metals or magnesium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/08—Other phosphides
- C01B25/088—Other phosphides containing plural metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K21/00—Fireproofing materials
- C09K21/02—Inorganic materials
- C09K21/04—Inorganic materials containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
- C03C2217/283—Borides, phosphides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/29—Mixtures
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geology (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Thin Magnetic Films (AREA)
- Polysaccharides And Polysaccharide Derivatives (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33570681A | 1981-12-30 | 1981-12-30 | |
| US06/419,537 US4620968A (en) | 1981-12-30 | 1982-09-17 | Monoclinic phosphorus formed from vapor in the presence of an alkali metal |
| US06/442,208 US4508931A (en) | 1981-12-30 | 1982-11-16 | Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR8207569A true BR8207569A (pt) | 1983-10-25 |
Family
ID=27407080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR8207569A BR8207569A (pt) | 1981-12-30 | 1982-12-29 | Pelicula solida de mpx material solido estavel de alto teor de fosforo e de pelicula de polifosfeto dispositivo semicondutor e processo de obtencao do mesmo aparelho para transporte de vapor para deposicao de vapor para evaporacao instantanea e seus respectivos processos fosforo de alta pureza processos para formar fosforo para fazer material de polifosfetos e para preparacao de fosforo de alta pureza rotor otico material composto retardador de fogo de enchimento para revestimento otico e antireflexao adicao de impurezas |
Country Status (23)
| Country | Link |
|---|---|
| JP (1) | JPH0611644B2 (enExample) |
| KR (1) | KR840003144A (enExample) |
| AU (1) | AU553091B2 (enExample) |
| BR (1) | BR8207569A (enExample) |
| CA (1) | CA1215521A (enExample) |
| CH (3) | CH663609A5 (enExample) |
| DE (1) | DE3247869A1 (enExample) |
| DK (1) | DK578782A (enExample) |
| ES (2) | ES8406000A1 (enExample) |
| FR (1) | FR2530866B1 (enExample) |
| GB (2) | GB2113663B (enExample) |
| GR (1) | GR78374B (enExample) |
| HK (2) | HK38288A (enExample) |
| IE (1) | IE53683B1 (enExample) |
| IL (1) | IL67565A0 (enExample) |
| IT (1) | IT1210712B (enExample) |
| MA (1) | MA19673A1 (enExample) |
| NL (1) | NL8205055A (enExample) |
| NO (1) | NO824406L (enExample) |
| PL (1) | PL239879A1 (enExample) |
| PT (1) | PT76047B (enExample) |
| SE (4) | SE8207299L (enExample) |
| SG (1) | SG97687G (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5247349A (en) * | 1982-11-16 | 1993-09-21 | Stauffer Chemical Company | Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure |
| AU2992784A (en) * | 1983-06-29 | 1985-01-03 | Stauffer Chemical Company | Passivation and insulation of iii-v devices with pnictides |
| AU2993784A (en) * | 1984-02-17 | 1985-08-22 | Stauffer Chemical Company | Vacuum deposition of pnictides |
| EP0152668A3 (en) * | 1984-02-17 | 1986-06-25 | Stauffer Chemical Company | High vacuum deposition processes employing a continuous pnictide delivery system |
| AU2993684A (en) * | 1984-02-17 | 1985-08-22 | Stauffer Chemical Company | Vapour deposition of pnictides |
| GB9010000D0 (en) * | 1990-05-03 | 1990-06-27 | Stc Plc | Phosphide films |
| JP4958076B2 (ja) * | 2008-01-25 | 2012-06-20 | 住友電気工業株式会社 | 樹脂組成物中の赤リンの分析方法 |
| GB201601838D0 (en) | 2016-02-02 | 2016-03-16 | Univ Surrey | A composition |
| KR102307523B1 (ko) * | 2019-10-30 | 2021-09-30 | 울산과학기술원 | 폴리포스파이드 전구체의 제조방법, 결정성 적린 박막의 제조방법 및 전자 소자 응용 |
| CN111170292B (zh) * | 2019-11-04 | 2023-09-29 | 湖北大学 | 一种纤维相红磷纳米粒子的制备方法及其应用 |
| CN113932082A (zh) * | 2021-10-11 | 2022-01-14 | 宁夏大学 | 电池片扩散工艺的磷源传输装置以及包含其的温度控制系统 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3397038A (en) * | 1964-11-30 | 1968-08-13 | Hooker Chemical Corp | Manufacture of a reactive trisodium phosphide |
| FR2419585A1 (fr) * | 1978-03-07 | 1979-10-05 | Thomson Csf | Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede |
| US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| GB2055774B (en) * | 1979-04-09 | 1983-02-02 | Plessey Co Ltd | Methods of producing semiconductor materials |
-
1982
- 1982-12-16 AU AU91588/82A patent/AU553091B2/en not_active Ceased
- 1982-12-21 SE SE8207299A patent/SE8207299L/xx not_active Application Discontinuation
- 1982-12-22 GB GB08236528A patent/GB2113663B/en not_active Expired
- 1982-12-22 IE IE3057/82A patent/IE53683B1/en not_active IP Right Cessation
- 1982-12-23 DE DE19823247869 patent/DE3247869A1/de not_active Ceased
- 1982-12-27 IL IL67565A patent/IL67565A0/xx unknown
- 1982-12-29 PT PT76047A patent/PT76047B/pt unknown
- 1982-12-29 BR BR8207569A patent/BR8207569A/pt unknown
- 1982-12-29 NO NO824406A patent/NO824406L/no unknown
- 1982-12-29 CA CA000418657A patent/CA1215521A/en not_active Expired
- 1982-12-29 ES ES518662A patent/ES8406000A1/es not_active Expired
- 1982-12-30 KR KR1019820005882A patent/KR840003144A/ko not_active Ceased
- 1982-12-30 CH CH7644/82A patent/CH663609A5/de not_active IP Right Cessation
- 1982-12-30 MA MA19891A patent/MA19673A1/fr unknown
- 1982-12-30 DK DK578782A patent/DK578782A/da not_active Application Discontinuation
- 1982-12-30 NL NL8205055A patent/NL8205055A/nl not_active Application Discontinuation
- 1982-12-30 IT IT8249774A patent/IT1210712B/it active
- 1982-12-30 PL PL23987982A patent/PL239879A1/xx unknown
-
1983
- 1983-05-18 GR GR70142A patent/GR78374B/el unknown
- 1983-08-22 FR FR8313542A patent/FR2530866B1/fr not_active Expired
-
1984
- 1984-03-15 ES ES530659A patent/ES530659A0/es active Granted
- 1984-03-19 SE SE8401509A patent/SE8401509D0/xx not_active Application Discontinuation
- 1984-03-19 SE SE8401511A patent/SE8401511L/xx not_active Application Discontinuation
- 1984-03-19 SE SE8401510A patent/SE8401510D0/xx not_active Application Discontinuation
-
1985
- 1985-07-01 GB GB08516583A patent/GB2172585B/en not_active Expired
- 1985-12-30 CH CH4636/85A patent/CH672778A5/de not_active IP Right Cessation
- 1985-12-30 CH CH4635/85A patent/CH666252A5/de not_active IP Right Cessation
-
1987
- 1987-11-04 SG SG976/87A patent/SG97687G/en unknown
-
1988
- 1988-05-26 HK HK382/88A patent/HK38288A/xx not_active IP Right Cessation
- 1988-05-26 HK HK381/88A patent/HK38188A/xx not_active IP Right Cessation
-
1992
- 1992-05-19 JP JP4151368A patent/JPH0611644B2/ja not_active Expired - Lifetime
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