BR7803753A - Uma estrutura de capacitor de alta intensidade de campo - Google Patents

Uma estrutura de capacitor de alta intensidade de campo

Info

Publication number
BR7803753A
BR7803753A BR7803753A BR7803753A BR7803753A BR 7803753 A BR7803753 A BR 7803753A BR 7803753 A BR7803753 A BR 7803753A BR 7803753 A BR7803753 A BR 7803753A BR 7803753 A BR7803753 A BR 7803753A
Authority
BR
Brazil
Prior art keywords
high intensity
capacitor structure
intensity field
field capacitor
intensity
Prior art date
Application number
BR7803753A
Other languages
English (en)
Portuguese (pt)
Inventor
D Young
D Dimaria
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BR7803753A publication Critical patent/BR7803753A/pt

Links

Classifications

    • H10P14/69215—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6334—
    • H10P14/662—
    • H10P30/40—
BR7803753A 1977-06-21 1978-06-12 Uma estrutura de capacitor de alta intensidade de campo BR7803753A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/808,500 US4143393A (en) 1977-06-21 1977-06-21 High field capacitor structure employing a carrier trapping region

Publications (1)

Publication Number Publication Date
BR7803753A true BR7803753A (pt) 1979-03-20

Family

ID=25198950

Family Applications (1)

Application Number Title Priority Date Filing Date
BR7803753A BR7803753A (pt) 1977-06-21 1978-06-12 Uma estrutura de capacitor de alta intensidade de campo

Country Status (12)

Country Link
US (1) US4143393A (cg-RX-API-DMAC10.html)
JP (1) JPS5849032B2 (cg-RX-API-DMAC10.html)
AU (1) AU517008B2 (cg-RX-API-DMAC10.html)
BE (1) BE864116A (cg-RX-API-DMAC10.html)
BR (1) BR7803753A (cg-RX-API-DMAC10.html)
CA (1) CA1091312A (cg-RX-API-DMAC10.html)
DE (1) DE2805170A1 (cg-RX-API-DMAC10.html)
ES (1) ES467327A1 (cg-RX-API-DMAC10.html)
GB (1) GB1587022A (cg-RX-API-DMAC10.html)
IT (1) IT1109956B (cg-RX-API-DMAC10.html)
NL (1) NL7806558A (cg-RX-API-DMAC10.html)
SE (1) SE437744B (cg-RX-API-DMAC10.html)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535349A (en) * 1981-12-31 1985-08-13 International Business Machines Corporation Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing
US4861976A (en) * 1988-06-06 1989-08-29 American Telephone And Telegraph Company, At&T Bell Laboratories Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer
JP2722873B2 (ja) * 1991-07-29 1998-03-09 日本電気株式会社 半導体装置およびその製造方法
KR100335778B1 (ko) 1999-04-08 2002-05-09 박종섭 반도체 소자 및 그 제조 방법
KR100347547B1 (ko) 1999-07-30 2002-08-07 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6724655B2 (en) * 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6596617B1 (en) 2000-06-22 2003-07-22 Progressant Technologies, Inc. CMOS compatible process for making a tunable negative differential resistance (NDR) device
US6754104B2 (en) * 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6512274B1 (en) * 2000-06-22 2003-01-28 Progressant Technologies, Inc. CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
US6479862B1 (en) * 2000-06-22 2002-11-12 Progressant Technologies, Inc. Charge trapping device and method for implementing a transistor having a negative differential resistance mode
US6518589B2 (en) 2000-06-22 2003-02-11 Progressant Technologies, Inc. Dual mode FET & logic circuit having negative differential resistance mode
US6933548B1 (en) 2001-12-21 2005-08-23 Synopsys, Inc. Negative differential resistance load element
US7453083B2 (en) * 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6864104B2 (en) * 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US7095659B2 (en) * 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6847562B2 (en) * 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US6861707B1 (en) * 2002-06-28 2005-03-01 Progressant Technologies, Inc. Negative differential resistance (NDR) memory cell with reduced soft error rate
US7098472B2 (en) * 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6795337B2 (en) 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6912151B2 (en) * 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US6980467B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US6979580B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6806117B2 (en) * 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US6849483B2 (en) * 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US7012833B2 (en) * 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US7005711B2 (en) * 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
US9712128B2 (en) 2014-02-09 2017-07-18 Sitime Corporation Microelectromechanical resonator
US10676349B1 (en) 2016-08-12 2020-06-09 Sitime Corporation MEMS resonator

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252101A (cg-RX-API-DMAC10.html) * 1959-05-30
US4003701A (en) * 1971-02-02 1977-01-18 Scott Paper Company Graft copolymerization processes
JPS4840816A (cg-RX-API-DMAC10.html) * 1971-09-23 1973-06-15
US4004159A (en) * 1973-05-18 1977-01-18 Sanyo Electric Co., Ltd. Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation
JPS5532040B2 (cg-RX-API-DMAC10.html) * 1973-08-09 1980-08-22
US3972059A (en) * 1973-12-28 1976-07-27 International Business Machines Corporation Dielectric diode, fabrication thereof, and charge store memory therewith
DE2446088A1 (de) * 1974-09-26 1976-04-01 Siemens Ag Statisches speicherelement und verfahren zu seiner herstellung
US4047974A (en) * 1975-12-30 1977-09-13 Hughes Aircraft Company Process for fabricating non-volatile field effect semiconductor memory structure utilizing implanted ions to induce trapping states

Also Published As

Publication number Publication date
DE2805170C2 (cg-RX-API-DMAC10.html) 1987-09-24
GB1587022A (en) 1981-03-25
BE864116A (fr) 1978-06-16
JPS548484A (en) 1979-01-22
US4143393A (en) 1979-03-06
SE7803097L (sv) 1978-12-22
IT7821206A0 (it) 1978-03-15
ES467327A1 (es) 1978-11-01
JPS5849032B2 (ja) 1983-11-01
NL7806558A (nl) 1978-12-27
DE2805170A1 (de) 1979-01-04
AU3469478A (en) 1979-10-11
SE437744B (sv) 1985-03-11
AU517008B2 (en) 1981-07-02
IT1109956B (it) 1985-12-23
CA1091312A (en) 1980-12-09

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