BR6914646D0 - Dispositivo de memoria com efeito de campo - Google Patents
Dispositivo de memoria com efeito de campoInfo
- Publication number
- BR6914646D0 BR6914646D0 BR214646/69A BR21464669A BR6914646D0 BR 6914646 D0 BR6914646 D0 BR 6914646D0 BR 214646/69 A BR214646/69 A BR 214646/69A BR 21464669 A BR21464669 A BR 21464669A BR 6914646 D0 BR6914646 D0 BR 6914646D0
- Authority
- BR
- Brazil
- Prior art keywords
- memory device
- field effect
- effect memory
- field
- memory
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Logic Circuits (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US78151168A | 1968-12-05 | 1968-12-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
BR6914646D0 true BR6914646D0 (pt) | 1973-04-19 |
Family
ID=25122974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR214646/69A BR6914646D0 (pt) | 1968-12-05 | 1969-11-28 | Dispositivo de memoria com efeito de campo |
Country Status (9)
Country | Link |
---|---|
US (1) | US3549911A (pt) |
BE (1) | BE742660A (pt) |
BR (1) | BR6914646D0 (pt) |
DE (1) | DE1961125C3 (pt) |
ES (1) | ES374016A1 (pt) |
FR (1) | FR2025402A1 (pt) |
GB (1) | GB1288966A (pt) |
MY (1) | MY7300451A (pt) |
NL (1) | NL174001C (pt) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3624618A (en) * | 1967-12-14 | 1971-11-30 | Sperry Rand Corp | A high-speed memory array using variable threshold transistors |
US3660827A (en) * | 1969-09-10 | 1972-05-02 | Litton Systems Inc | Bistable electrical circuit with non-volatile storage capability |
US3691535A (en) * | 1970-06-15 | 1972-09-12 | Sperry Rand Corp | Solid state memory array |
US4233673A (en) * | 1970-06-24 | 1980-11-11 | Westinghouse Electric Corp. | Electrically resettable non-volatile memory for a fuse system |
US3680062A (en) * | 1970-06-24 | 1972-07-25 | Westinghouse Electric Corp | Resettable non-volatile memory utilizing variable threshold voltage devices |
US3683335A (en) * | 1970-06-24 | 1972-08-08 | Westinghouse Electric Corp | Non-volatile memory element and array |
US3651492A (en) * | 1970-11-02 | 1972-03-21 | Ncr Co | Nonvolatile memory cell |
US3713111A (en) * | 1970-12-14 | 1973-01-23 | Rca Corp | Operation of memory array employing variable threshold transistors |
US3694700A (en) * | 1971-02-19 | 1972-09-26 | Nasa | Integrated circuit including field effect transistor and cerment resistor |
US3761898A (en) * | 1971-03-05 | 1973-09-25 | Raytheon Co | Random access memory |
US3731122A (en) * | 1971-03-31 | 1973-05-01 | Bendix Corp | Electrically controlled resistive weights |
US3740732A (en) * | 1971-08-12 | 1973-06-19 | Texas Instruments Inc | Dynamic data storage cell |
US3855581A (en) * | 1971-12-30 | 1974-12-17 | Mos Technology Inc | Semiconductor device and circuits |
US3772607A (en) * | 1972-02-09 | 1973-11-13 | Ibm | Fet interface circuit |
US3859642A (en) * | 1973-04-05 | 1975-01-07 | Bell Telephone Labor Inc | Random access memory array of hysteresis loop capacitors |
US3898632A (en) * | 1974-07-15 | 1975-08-05 | Sperry Rand Corp | Semiconductor block-oriented read/write memory |
US3992701A (en) * | 1975-04-10 | 1976-11-16 | International Business Machines Corporation | Non-volatile memory cell and array using substrate current |
JPS53140067A (en) * | 1977-05-13 | 1978-12-06 | Citizen Watch Co Ltd | Electronic device of small size |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2907000A (en) * | 1955-08-05 | 1959-09-29 | Sperry Rand Corp | Double base diode memory |
US3070779A (en) * | 1955-09-26 | 1962-12-25 | Ibm | Apparatus utilizing minority carrier storage for signal storage, pulse reshaping, logic gating, pulse amplifying and pulse delaying |
US3355721A (en) * | 1964-08-25 | 1967-11-28 | Rca Corp | Information storage |
-
1968
- 1968-12-05 US US781511A patent/US3549911A/en not_active Expired - Lifetime
-
1969
- 1969-11-28 BR BR214646/69A patent/BR6914646D0/pt unknown
- 1969-11-28 ES ES374016A patent/ES374016A1/es not_active Expired
- 1969-12-03 FR FR6941779A patent/FR2025402A1/fr not_active Withdrawn
- 1969-12-04 NL NLAANVRAGE6918231,A patent/NL174001C/xx not_active IP Right Cessation
- 1969-12-04 BE BE742660D patent/BE742660A/xx unknown
- 1969-12-05 DE DE1961125A patent/DE1961125C3/de not_active Expired
- 1969-12-05 GB GB1288966D patent/GB1288966A/en not_active Expired
-
1973
- 1973-12-30 MY MY451/73A patent/MY7300451A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB1288966A (pt) | 1972-09-13 |
DE1961125A1 (de) | 1970-09-24 |
ES374016A1 (es) | 1971-11-16 |
US3549911A (en) | 1970-12-22 |
FR2025402A1 (pt) | 1970-09-11 |
NL174001B (nl) | 1983-11-01 |
MY7300451A (en) | 1973-12-31 |
DE1961125C3 (de) | 1983-01-05 |
DE1961125B2 (de) | 1973-04-26 |
NL174001C (nl) | 1984-04-02 |
BE742660A (pt) | 1970-05-14 |
NL6918231A (pt) | 1970-06-09 |
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