BR6914646D0 - Dispositivo de memoria com efeito de campo - Google Patents

Dispositivo de memoria com efeito de campo

Info

Publication number
BR6914646D0
BR6914646D0 BR214646/69A BR21464669A BR6914646D0 BR 6914646 D0 BR6914646 D0 BR 6914646D0 BR 214646/69 A BR214646/69 A BR 214646/69A BR 21464669 A BR21464669 A BR 21464669A BR 6914646 D0 BR6914646 D0 BR 6914646D0
Authority
BR
Brazil
Prior art keywords
memory device
field effect
effect memory
field
memory
Prior art date
Application number
BR214646/69A
Other languages
English (en)
Inventor
J Scott
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BR6914646D0 publication Critical patent/BR6914646D0/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/792Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
BR214646/69A 1968-12-05 1969-11-28 Dispositivo de memoria com efeito de campo BR6914646D0 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78151168A 1968-12-05 1968-12-05

Publications (1)

Publication Number Publication Date
BR6914646D0 true BR6914646D0 (pt) 1973-04-19

Family

ID=25122974

Family Applications (1)

Application Number Title Priority Date Filing Date
BR214646/69A BR6914646D0 (pt) 1968-12-05 1969-11-28 Dispositivo de memoria com efeito de campo

Country Status (9)

Country Link
US (1) US3549911A (pt)
BE (1) BE742660A (pt)
BR (1) BR6914646D0 (pt)
DE (1) DE1961125C3 (pt)
ES (1) ES374016A1 (pt)
FR (1) FR2025402A1 (pt)
GB (1) GB1288966A (pt)
MY (1) MY7300451A (pt)
NL (1) NL174001C (pt)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624618A (en) * 1967-12-14 1971-11-30 Sperry Rand Corp A high-speed memory array using variable threshold transistors
US3660827A (en) * 1969-09-10 1972-05-02 Litton Systems Inc Bistable electrical circuit with non-volatile storage capability
US3691535A (en) * 1970-06-15 1972-09-12 Sperry Rand Corp Solid state memory array
US4233673A (en) * 1970-06-24 1980-11-11 Westinghouse Electric Corp. Electrically resettable non-volatile memory for a fuse system
US3680062A (en) * 1970-06-24 1972-07-25 Westinghouse Electric Corp Resettable non-volatile memory utilizing variable threshold voltage devices
US3683335A (en) * 1970-06-24 1972-08-08 Westinghouse Electric Corp Non-volatile memory element and array
US3651492A (en) * 1970-11-02 1972-03-21 Ncr Co Nonvolatile memory cell
US3713111A (en) * 1970-12-14 1973-01-23 Rca Corp Operation of memory array employing variable threshold transistors
US3694700A (en) * 1971-02-19 1972-09-26 Nasa Integrated circuit including field effect transistor and cerment resistor
US3761898A (en) * 1971-03-05 1973-09-25 Raytheon Co Random access memory
US3731122A (en) * 1971-03-31 1973-05-01 Bendix Corp Electrically controlled resistive weights
US3740732A (en) * 1971-08-12 1973-06-19 Texas Instruments Inc Dynamic data storage cell
US3855581A (en) * 1971-12-30 1974-12-17 Mos Technology Inc Semiconductor device and circuits
US3772607A (en) * 1972-02-09 1973-11-13 Ibm Fet interface circuit
US3859642A (en) * 1973-04-05 1975-01-07 Bell Telephone Labor Inc Random access memory array of hysteresis loop capacitors
US3898632A (en) * 1974-07-15 1975-08-05 Sperry Rand Corp Semiconductor block-oriented read/write memory
US3992701A (en) * 1975-04-10 1976-11-16 International Business Machines Corporation Non-volatile memory cell and array using substrate current
JPS53140067A (en) * 1977-05-13 1978-12-06 Citizen Watch Co Ltd Electronic device of small size

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2907000A (en) * 1955-08-05 1959-09-29 Sperry Rand Corp Double base diode memory
US3070779A (en) * 1955-09-26 1962-12-25 Ibm Apparatus utilizing minority carrier storage for signal storage, pulse reshaping, logic gating, pulse amplifying and pulse delaying
US3355721A (en) * 1964-08-25 1967-11-28 Rca Corp Information storage

Also Published As

Publication number Publication date
GB1288966A (pt) 1972-09-13
DE1961125A1 (de) 1970-09-24
ES374016A1 (es) 1971-11-16
US3549911A (en) 1970-12-22
FR2025402A1 (pt) 1970-09-11
NL174001B (nl) 1983-11-01
MY7300451A (en) 1973-12-31
DE1961125C3 (de) 1983-01-05
DE1961125B2 (de) 1973-04-26
NL174001C (nl) 1984-04-02
BE742660A (pt) 1970-05-14
NL6918231A (pt) 1970-06-09

Similar Documents

Publication Publication Date Title
BR6911817D0 (pt) Di-oxidos de benzotiazina
FI53460C (fi) Foerfarande foer separering av olefiner
CH482439A (de) Beobachtungseinrichtung
FI54176B (fi) Saett foer renovering av avloppsledningar
BR6909966D0 (pt) Dispositivo
FI53443C (fi) Foerfarande foer framstaellning av natriumaluminiumsilikater
BR6914646D0 (pt) Dispositivo de memoria com efeito de campo
AT293920B (de) Alarmvorrichtung
FI53327C (fi) Foerfarande foer framstaellning av konstlaeder
DE1905856B2 (de) Geraetekombination
FI54879B (fi) Foerfarande foer framstaellning av fiberansamlingar
BR6915620D0 (pt) Gonzo regulavel
FI53877C (fi) Foerfarande foer framstaellning av vaermeisolerade ledningsroer
BR6905759D0 (pt) Plantador
CH483248A (de) Auftragvorrichtung
BR6913139D0 (pt) Dispositivo traqueal
FI54657B (fi) Foerfarande foer automatisk reglering av en loesningsmedelraffineringsprocess
FI54921B (fi) Foerfarande foer framstaellning av saosom laekemedel anvaendbara 4-hydroxitiazolinderivat
BR6906016D0 (pt) Aparelho aperfeicoado de efeito de campo
CH497791A (de) Transistor
BR6908290D0 (pt) Transistor de efeito de campo
CH489914A (de) Feldeffekttransistor
RO73027A (ro) Dispozitiv de injectie-suflare
CH505471A (de) Feldeffekttransistor
CH495632A (de) Feldeffekttransistor