BR6680818D0 - Um transistor e processo de fabrica-lo - Google Patents
Um transistor e processo de fabrica-loInfo
- Publication number
- BR6680818D0 BR6680818D0 BR180818/66A BR18081866A BR6680818D0 BR 6680818 D0 BR6680818 D0 BR 6680818D0 BR 180818/66 A BR180818/66 A BR 180818/66A BR 18081866 A BR18081866 A BR 18081866A BR 6680818 D0 BR6680818 D0 BR 6680818D0
- Authority
- BR
- Brazil
- Prior art keywords
- transistor
- manufacturing process
- manufacturing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
- H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
- H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/10—Arrangements for heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US467885A US3355636A (en) | 1965-06-29 | 1965-06-29 | High power, high frequency transistor |
| US71827467A | 1967-11-01 | 1967-11-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BR6680818D0 true BR6680818D0 (pt) | 1973-05-15 |
Family
ID=27042210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BR180818/66A BR6680818D0 (pt) | 1965-06-29 | 1966-06-28 | Um transistor e processo de fabrica-lo |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US3355636A (enExample) |
| BR (1) | BR6680818D0 (enExample) |
| ES (1) | ES328416A1 (enExample) |
| GB (1) | GB1127824A (enExample) |
| NL (1) | NL6608959A (enExample) |
| SE (1) | SE336406B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1514563A1 (de) * | 1965-09-07 | 1969-06-19 | Semikron Gleichrichterbau | Steuerbares Halbleiterbauelement |
| NL6612022A (enExample) * | 1966-08-26 | 1968-02-27 | ||
| NL158024B (nl) * | 1967-05-13 | 1978-09-15 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze. |
| FR96113E (fr) * | 1967-12-06 | 1972-05-19 | Ibm | Dispositif semi-conducteur. |
| US3789276A (en) * | 1968-07-15 | 1974-01-29 | Texas Instruments Inc | Multilayer microelectronic circuitry techniques |
| US3591921A (en) * | 1968-09-30 | 1971-07-13 | Varo | Method for making rectifier stacks |
| GB1335201A (en) * | 1970-05-21 | 1973-10-24 | Lucas Industries Ltd | Method of manufacturing semi-conductor devices |
| US3753289A (en) * | 1970-11-02 | 1973-08-21 | Gen Electric | Process for manufacture of substrate supported semiconductive stack |
| US3769561A (en) * | 1972-02-24 | 1973-10-30 | Us Navy | Current limiting integrated circuit |
| US3883948A (en) * | 1974-01-02 | 1975-05-20 | Signetics Corp | Semiconductor structure and method |
| US4261781A (en) * | 1979-01-31 | 1981-04-14 | International Business Machines Corporation | Process for forming compound semiconductor bodies |
| DE2926741C2 (de) * | 1979-07-03 | 1982-09-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Feldeffekt-Transistor und Verfahren zu seiner Herstellung |
| JPS5778173A (en) * | 1980-11-04 | 1982-05-15 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| US4473834A (en) * | 1982-04-19 | 1984-09-25 | Rockwell International Corporation | Light emitting transistor array |
| EP0161740B1 (en) * | 1984-05-09 | 1991-06-12 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor substrate |
| JPS61112345A (ja) * | 1984-11-07 | 1986-05-30 | Toshiba Corp | 半導体装置の製造方法 |
| CA1251514A (en) * | 1985-02-20 | 1989-03-21 | Tadashi Sakai | Ion selective field effect transistor sensor |
| JPS62154614A (ja) * | 1985-12-27 | 1987-07-09 | Toshiba Corp | 接合型半導体基板の製造方法 |
| US4704785A (en) * | 1986-08-01 | 1987-11-10 | Texas Instruments Incorporated | Process for making a buried conductor by fusing two wafers |
| DE4321804A1 (de) * | 1993-06-30 | 1995-01-12 | Ranco Inc | Verfahren zur Herstellung von Kleinbauelementen |
| US6525335B1 (en) | 2000-11-06 | 2003-02-25 | Lumileds Lighting, U.S., Llc | Light emitting semiconductor devices including wafer bonded heterostructures |
| FR2903809B1 (fr) * | 2006-07-13 | 2008-10-17 | Soitec Silicon On Insulator | Traitement thermique de stabilisation d'interface e collage. |
| CN113320036B (zh) * | 2021-06-18 | 2024-02-13 | 常州时创能源股份有限公司 | 条状硅材的开方截断工艺及其应用 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3091701A (en) * | 1956-03-26 | 1963-05-28 | Raytheon Co | High frequency response transistors |
| US3114865A (en) * | 1956-08-08 | 1963-12-17 | Bendix Corp | Semiconductor and unitary connector structure comprising alternately stacked base andemitter leads |
| US3044147A (en) * | 1959-04-21 | 1962-07-17 | Pacific Semiconductors Inc | Semiconductor technology method of contacting a body |
| US3152939A (en) * | 1960-08-12 | 1964-10-13 | Westinghouse Electric Corp | Process for preparing semiconductor members |
| US3171068A (en) * | 1960-10-19 | 1965-02-23 | Merck & Co Inc | Semiconductor diodes |
| US3166448A (en) * | 1961-04-07 | 1965-01-19 | Clevite Corp | Method for producing rib transistor |
| FR1297155A (fr) * | 1961-04-18 | 1962-06-29 | Alsacienne Constr Meca | Procédé pour l'obtention de thermocouples |
| NL278058A (enExample) * | 1961-05-26 | |||
| NL122607C (enExample) * | 1961-07-26 | 1900-01-01 | ||
| US3290760A (en) * | 1963-12-16 | 1966-12-13 | Rca Corp | Method of making a composite insulator semiconductor wafer |
| US3307239A (en) * | 1964-02-18 | 1967-03-07 | Bell Telephone Labor Inc | Method of making integrated semiconductor devices |
| US3383760A (en) * | 1965-08-09 | 1968-05-21 | Rca Corp | Method of making semiconductor devices |
-
1965
- 1965-06-29 US US467885A patent/US3355636A/en not_active Expired - Lifetime
-
1966
- 1966-06-13 GB GB26343/66A patent/GB1127824A/en not_active Expired
- 1966-06-27 ES ES328416A patent/ES328416A1/es not_active Expired
- 1966-06-28 BR BR180818/66A patent/BR6680818D0/pt unknown
- 1966-06-28 SE SE08778/66A patent/SE336406B/xx unknown
- 1966-06-28 NL NL6608959A patent/NL6608959A/xx unknown
-
1967
- 1967-11-01 US US718274A patent/US3488835A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3488835A (en) | 1970-01-13 |
| NL6608959A (enExample) | 1966-12-30 |
| DE1564535B2 (de) | 1973-02-01 |
| GB1127824A (en) | 1968-09-18 |
| DE1564535A1 (de) | 1972-02-17 |
| ES328416A1 (es) | 1968-05-01 |
| SE336406B (enExample) | 1971-07-05 |
| US3355636A (en) | 1967-11-28 |
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