BR112016027361A8 - Sistema aprimorado de captura de energia eletromagnética de alta eficiência, processo para gerar força, e, produtos - Google Patents

Sistema aprimorado de captura de energia eletromagnética de alta eficiência, processo para gerar força, e, produtos

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Publication number
BR112016027361A8
BR112016027361A8 BR112016027361A BR112016027361A BR112016027361A8 BR 112016027361 A8 BR112016027361 A8 BR 112016027361A8 BR 112016027361 A BR112016027361 A BR 112016027361A BR 112016027361 A BR112016027361 A BR 112016027361A BR 112016027361 A8 BR112016027361 A8 BR 112016027361A8
Authority
BR
Brazil
Prior art keywords
energy
electromagnetic
products
electromagnetic energy
high efficiency
Prior art date
Application number
BR112016027361A
Other languages
English (en)
Other versions
BR112016027361A2 (pt
Inventor
Hohulin Scott
Original Assignee
Solar Cubed Dev Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solar Cubed Dev Llc filed Critical Solar Cubed Dev Llc
Publication of BR112016027361A2 publication Critical patent/BR112016027361A2/pt
Publication of BR112016027361A8 publication Critical patent/BR112016027361A8/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0549—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising spectrum splitting means, e.g. dichroic mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/001—Energy harvesting or scavenging
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/50—Circuit arrangements or systems for wireless supply or distribution of electric power using additional energy repeaters between transmitting devices and receiving devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electron Tubes For Measurement (AREA)

Abstract

SISTEMA DE ENERGIA ELETROMAGNÉTICA DE ESPECTRO COMPLETO. A energia eletromagnética (EM) coletada em três dimensões, em camadas, permite que múltiplos planos funcionem de modo operacional com estruturas de banda proibida otimizadas através do que os filmes eletromagnéticos tridimensionais sobrejacentes e integrados variantes permitem que os sistemas coletem energia através de todo o espectro eletromagnético, e presentes sistemas que utilizam tanto luz direta quanto luz indireta para seu desenvolvimento. O EM-CS captura e contém mais energia de EMR do que os sistemas convencionais que abordam necessidades de energia global.
BR112016027361A 2014-05-22 2015-05-22 Sistema aprimorado de captura de energia eletromagnética de alta eficiência, processo para gerar força, e, produtos BR112016027361A8 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462002122P 2014-05-22 2014-05-22
US201462024305P 2014-07-14 2014-07-14
PCT/US2015/032148 WO2015179745A1 (en) 2014-05-22 2015-05-22 Full spectrum electro-magnetic energy system

Publications (2)

Publication Number Publication Date
BR112016027361A2 BR112016027361A2 (pt) 2017-08-15
BR112016027361A8 true BR112016027361A8 (pt) 2022-08-09

Family

ID=54554823

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112016027361A BR112016027361A8 (pt) 2014-05-22 2015-05-22 Sistema aprimorado de captura de energia eletromagnética de alta eficiência, processo para gerar força, e, produtos

Country Status (16)

Country Link
EP (1) EP3146617B1 (pt)
JP (2) JP2017517156A (pt)
KR (1) KR101893843B1 (pt)
CN (1) CN106464198B (pt)
AP (1) AP2016009625A0 (pt)
AU (4) AU2015263966A1 (pt)
BR (1) BR112016027361A8 (pt)
CA (1) CA2959192C (pt)
ES (1) ES2791175T3 (pt)
GB (1) GB2540309B (pt)
IL (1) IL248631A (pt)
MX (1) MX356379B (pt)
PL (1) PL3146617T3 (pt)
RU (1) RU2689144C2 (pt)
SG (1) SG11201609720QA (pt)
WO (1) WO2015179745A1 (pt)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11509264B2 (en) 2014-05-22 2022-11-22 Solar Cubed Holdings Llc Full spectrum electro-magnetic energy system
EA036207B1 (ru) * 2019-08-07 2020-10-14 Федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина)" (СПбГЭТУ "ЛЭТИ") Солнечный элемент со спектральным разделением солнечного излучения
CN115407046B (zh) * 2022-08-05 2024-04-16 西南石油大学 基于岩石细观结构与等效石英含量的研磨性综合表征方法

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Also Published As

Publication number Publication date
RU2016150498A (ru) 2018-06-22
PL3146617T3 (pl) 2020-08-10
GB201618375D0 (en) 2016-12-14
EP3146617A4 (en) 2018-02-28
JP2018113472A (ja) 2018-07-19
IL248631A (en) 2017-06-29
AU2020202888A1 (en) 2020-05-21
EP3146617A1 (en) 2017-03-29
GB2540309A (en) 2017-01-11
JP2017517156A (ja) 2017-06-22
WO2015179745A1 (en) 2015-11-26
GB2540309B (en) 2017-08-23
AU2018201320A1 (en) 2018-03-15
EP3146617B1 (en) 2020-02-12
AU2015263966A1 (en) 2016-11-17
MX2016014285A (es) 2017-05-30
BR112016027361A2 (pt) 2017-08-15
CN106464198A (zh) 2017-02-22
CA2959192C (en) 2017-10-03
AU2021205103A1 (en) 2021-08-12
SG11201609720QA (en) 2016-12-29
RU2689144C2 (ru) 2019-05-24
RU2016150498A3 (pt) 2018-06-22
KR20170023006A (ko) 2017-03-02
CN106464198B (zh) 2019-09-06
MX356379B (es) 2018-05-25
AP2016009625A0 (en) 2016-12-31
CA2959192A1 (en) 2015-11-26
KR101893843B1 (ko) 2018-09-04
ES2791175T3 (es) 2020-11-03

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