BR112016019734A2 - Amplificador de baixo ruído, dispositivo de comunicação sem fio, e, receptor - Google Patents

Amplificador de baixo ruído, dispositivo de comunicação sem fio, e, receptor

Info

Publication number
BR112016019734A2
BR112016019734A2 BR112016019734A BR112016019734A BR112016019734A2 BR 112016019734 A2 BR112016019734 A2 BR 112016019734A2 BR 112016019734 A BR112016019734 A BR 112016019734A BR 112016019734 A BR112016019734 A BR 112016019734A BR 112016019734 A2 BR112016019734 A2 BR 112016019734A2
Authority
BR
Brazil
Prior art keywords
receiver
wireless communication
communication device
low noise
noise amplifier
Prior art date
Application number
BR112016019734A
Other languages
English (en)
Other versions
BR112016019734B1 (pt
Inventor
Sivonen Pete
Jussila Jarkko
Vilhonen Sami
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of BR112016019734A2 publication Critical patent/BR112016019734A2/pt
Publication of BR112016019734B1 publication Critical patent/BR112016019734B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/26—Push-pull amplifiers; Phase-splitters therefor
    • H03F3/265—Push-pull amplifiers; Phase-splitters therefor with field-effect transistors only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/10—Means associated with receiver for limiting or suppressing noise or interference
    • H04B1/1027—Means associated with receiver for limiting or suppressing noise or interference assessing signal quality or detecting noise/interference for the received signal
    • H04B1/1036—Means associated with receiver for limiting or suppressing noise or interference assessing signal quality or detecting noise/interference for the received signal with automatic suppression of narrow band noise or interference, e.g. by using tuneable notch filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/489—A coil being added in the source circuit of a common source stage, e.g. as degeneration means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/54—Two or more capacitor coupled amplifier stages in cascade
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/87—Indexing scheme relating to amplifiers the cross coupling circuit being realised only by MOSFETs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
BR112016019734-8A 2014-02-28 2015-02-23 Amplificador de baixo ruído, dispositivo de comunicação sem fio, e, receptor BR112016019734B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP14157220.6A EP2913922A1 (en) 2014-02-28 2014-02-28 A low noise amplifier circuit
EP14157220.6 2014-02-28
PCT/EP2015/053728 WO2015128289A1 (en) 2014-02-28 2015-02-23 A low noise amplifier circuit

Publications (2)

Publication Number Publication Date
BR112016019734A2 true BR112016019734A2 (pt) 2017-08-15
BR112016019734B1 BR112016019734B1 (pt) 2022-12-27

Family

ID=50179533

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112016019734-8A BR112016019734B1 (pt) 2014-02-28 2015-02-23 Amplificador de baixo ruído, dispositivo de comunicação sem fio, e, receptor

Country Status (5)

Country Link
US (5) US9948248B2 (pt)
EP (1) EP2913922A1 (pt)
CN (2) CN109379050B (pt)
BR (1) BR112016019734B1 (pt)
WO (1) WO2015128289A1 (pt)

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CN112887876B (zh) * 2021-01-12 2022-07-08 厦门亿联网络技术股份有限公司 支持单端信号的差分音频系统及控制方法
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Also Published As

Publication number Publication date
US20190393844A1 (en) 2019-12-26
BR112016019734B1 (pt) 2022-12-27
CN106063125A (zh) 2016-10-26
CN109379050A (zh) 2019-02-22
US10454431B2 (en) 2019-10-22
US9948248B2 (en) 2018-04-17
US11057005B2 (en) 2021-07-06
CN106063125B (zh) 2018-09-07
US20180198422A1 (en) 2018-07-12
CN109379050B (zh) 2022-08-09
EP2913922A1 (en) 2015-09-02
US20230361723A1 (en) 2023-11-09
US20170070197A1 (en) 2017-03-09
US20220029587A1 (en) 2022-01-27
WO2015128289A1 (en) 2015-09-03

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B350 Update of information on the portal [chapter 15.35 patent gazette]
B350 Update of information on the portal [chapter 15.35 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

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