BR0204949A - Método para fabricar arranjos emissores de campo de gan - Google Patents
Método para fabricar arranjos emissores de campo de ganInfo
- Publication number
- BR0204949A BR0204949A BR0204949-0A BR0204949A BR0204949A BR 0204949 A BR0204949 A BR 0204949A BR 0204949 A BR0204949 A BR 0204949A BR 0204949 A BR0204949 A BR 0204949A
- Authority
- BR
- Brazil
- Prior art keywords
- nanopoint
- ganoder
- fabricating
- improved
- forming
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
"MéTODO PARA FABRICAR ARRANJOS EMISSORES DE CAMPO DE GaN". São descritos uma estrutura de nanoponta aperfeiçoada e um método para formar a estrutura de nanoponta e um sistema mostrador que utiliza a estrutura de nanoponta aperfeiçoada. A nanoponta descrita é formada de um semicondutor que possui uma estrutura cristalina, tal como nitreto de gálio. A estrutura cristalina, de preferência, forma deslocamentos orientados na direção das nanopontas. Um método de formar a estrutura de nanoponta utiliza as taxas de gravação relativamente lentas que ocorrem em torno dos deslocamentos em comparação com as taxas de gravação mais rápidas que ocorrem em outras partes da estrutura semicondutora. A gravação mais lenta em torno dos deslocamentos possibilita a formação de nanopontas de relação de aspecto relativamente maior na área de deslocamento.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/998,336 US6579735B1 (en) | 2001-12-03 | 2001-12-03 | Method for fabricating GaN field emitter arrays |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BR0204949A true BR0204949A (pt) | 2005-02-22 |
| BRPI0204949B1 BRPI0204949B1 (pt) | 2015-12-01 |
Family
ID=25545070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0204949A BRPI0204949B1 (pt) | 2001-12-03 | 2002-11-29 | método de formar um arranjo emissor de campo |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6579735B1 (pt) |
| EP (1) | EP1316982B1 (pt) |
| JP (1) | JP4087689B2 (pt) |
| BR (1) | BRPI0204949B1 (pt) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6986693B2 (en) * | 2003-03-26 | 2006-01-17 | Lucent Technologies Inc. | Group III-nitride layers with patterned surfaces |
| US7494840B2 (en) * | 2004-10-21 | 2009-02-24 | Sharp Laboratories Of America, Inc. | Optical device with IrOx nanostructure electrode neural interface |
| US7320897B2 (en) * | 2005-03-23 | 2008-01-22 | Sharp Laboratories Of Amrica, Inc. | Electroluminescence device with nanotip diodes |
| CN102163545B (zh) * | 2011-03-18 | 2013-04-03 | 苏州纳维科技有限公司 | 微柱阵列的制备方法、阵列结构及生长晶体材料的方法 |
| CN115424909A (zh) * | 2022-08-02 | 2022-12-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场发射器件及其制作方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3922475A (en) * | 1970-06-22 | 1975-11-25 | Rockwell International Corp | Process for producing nitride films |
| US3805601A (en) * | 1972-07-28 | 1974-04-23 | Bell & Howell Co | High sensitivity semiconductor strain gauge |
| US5536193A (en) | 1991-11-07 | 1996-07-16 | Microelectronics And Computer Technology Corporation | Method of making wide band gap field emitter |
| US5844252A (en) | 1993-09-24 | 1998-12-01 | Sumitomo Electric Industries, Ltd. | Field emission devices having diamond field emitter, methods for making same, and methods for fabricating porous diamond |
| US5394006A (en) * | 1994-01-04 | 1995-02-28 | Industrial Technology Research Institute | Narrow gate opening manufacturing of gated fluid emitters |
| RU2074444C1 (ru) * | 1994-07-26 | 1997-02-27 | Евгений Инвиевич Гиваргизов | Матричный автоэлектронный катод и электронный прибор для оптического отображения информации |
| US5713775A (en) | 1995-05-02 | 1998-02-03 | Massachusetts Institute Of Technology | Field emitters of wide-bandgap materials and methods for their fabrication |
| US5684319A (en) * | 1995-08-24 | 1997-11-04 | National Semiconductor Corporation | Self-aligned source and body contact structure for high performance DMOS transistors and method of fabricating same |
| US6201342B1 (en) | 1997-06-30 | 2001-03-13 | The United States Of America As Represented By The Secretary Of The Navy | Automatically sharp field emission cathodes |
| US6218771B1 (en) | 1998-06-26 | 2001-04-17 | University Of Houston | Group III nitride field emitters |
| US6165808A (en) * | 1998-10-06 | 2000-12-26 | Micron Technology, Inc. | Low temperature process for sharpening tapered silicon structures |
| JP2000149765A (ja) * | 1998-11-13 | 2000-05-30 | Ise Electronics Corp | 蛍光表示装置 |
| KR20010011136A (ko) | 1999-07-26 | 2001-02-15 | 정선종 | 나노구조를 에미터로 사용한 삼극형 전계 방출 에미터의 구조및 그 제조방법 |
-
2001
- 2001-12-03 US US09/998,336 patent/US6579735B1/en not_active Expired - Lifetime
-
2002
- 2002-11-26 JP JP2002342729A patent/JP4087689B2/ja not_active Expired - Fee Related
- 2002-11-29 BR BRPI0204949A patent/BRPI0204949B1/pt not_active IP Right Cessation
- 2002-12-03 EP EP02026934.6A patent/EP1316982B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6579735B1 (en) | 2003-06-17 |
| BRPI0204949B1 (pt) | 2015-12-01 |
| JP2003187690A (ja) | 2003-07-04 |
| EP1316982B1 (en) | 2014-05-07 |
| EP1316982A1 (en) | 2003-06-04 |
| JP4087689B2 (ja) | 2008-05-21 |
| US20030104643A1 (en) | 2003-06-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06G | Technical and formal requirements: other requirements [chapter 6.7 patent gazette] |
Free format text: BASEADO NO ART. 216 1 DA LPI, APRESENTE COPIA AUTENTICADA DA PROCURACAO PARA QUE ESTA SEJA ACEITA. |
|
| B07A | Application suspended after technical examination (opinion) [chapter 7.1 patent gazette] | ||
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 01/12/2015, OBSERVADAS AS CONDICOES LEGAIS. |
|
| B21F | Lapse acc. art. 78, item iv - on non-payment of the annual fees in time |
Free format text: REFERENTE A 20A ANUIDADE. |
|
| B24J | Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12) |
Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2698 DE 20-09-2022 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |