BR0103435B1 - composiÇço de tonalizador. - Google Patents
composiÇço de tonalizador.Info
- Publication number
- BR0103435B1 BR0103435B1 BRPI0103435-9A BR0103435A BR0103435B1 BR 0103435 B1 BR0103435 B1 BR 0103435B1 BR 0103435 A BR0103435 A BR 0103435A BR 0103435 B1 BR0103435 B1 BR 0103435B1
- Authority
- BR
- Brazil
- Prior art keywords
- toner composition
- toner
- composition
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/643,211 US6309925B1 (en) | 2000-08-22 | 2000-08-22 | Method for manufacturing capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| BR0103435A BR0103435A (pt) | 2002-07-30 |
| BR0103435B1 true BR0103435B1 (pt) | 2011-06-14 |
Family
ID=24579831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0103435-9A BR0103435B1 (pt) | 2000-08-22 | 2001-08-17 | composiÇço de tonalizador. |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6309925B1 (pt) |
| BR (1) | BR0103435B1 (pt) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100447729B1 (ko) * | 2002-05-03 | 2004-09-10 | 주식회사 하이닉스반도체 | 반도체 장치의 제조 방법 |
| US20050170598A1 (en) * | 2004-01-29 | 2005-08-04 | Howard Gregory E. | Silicided amorphous polysilicon - metal capacitor |
| US7118958B2 (en) * | 2005-03-03 | 2006-10-10 | Texas Instruments Incorporated | Method of manufacturing a metal-insulator-metal capacitor using an etchback process |
| KR100848241B1 (ko) * | 2006-12-27 | 2008-07-24 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조방법 |
| CN110634845A (zh) * | 2019-09-12 | 2019-12-31 | 上海华力集成电路制造有限公司 | Mim电容的制造方法及一mim电容 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5393691A (en) * | 1993-07-28 | 1995-02-28 | Taiwan Semiconductor Manufacturing Company | Fabrication of w-polycide-to-poly capacitors with high linearity |
| US5866451A (en) * | 1996-05-28 | 1999-02-02 | Taiwan Semiconductor Manufacturing Company Ltd | Method of making a semiconductor device having 4t sram and mixed-mode capacitor in logic |
| US6075266A (en) * | 1997-01-09 | 2000-06-13 | Kabushiki Kaisha Toshiba | Semiconductor device having MIS transistors and capacitor |
| US6054359A (en) * | 1999-06-14 | 2000-04-25 | Taiwan Semiconductor Manufacturing Company | Method for making high-sheet-resistance polysilicon resistors for integrated circuits |
-
2000
- 2000-08-22 US US09/643,211 patent/US6309925B1/en not_active Expired - Fee Related
-
2001
- 2001-08-17 BR BRPI0103435-9A patent/BR0103435B1/pt not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US6309925B1 (en) | 2001-10-30 |
| BR0103435A (pt) | 2002-07-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
| B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
| B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 17/08/2001, OBSERVADAS AS CONDICOES LEGAIS. |
|
| B21F | Lapse acc. art. 78, item iv - on non-payment of the annual fees in time |
Free format text: REFERENTE A 15A ANUIDADE. |
|
| B24J | Lapse because of non-payment of annual fees (definitively: art 78 iv lpi, resolution 113/2013 art. 12) |
Free format text: EM VIRTUDE DA EXTINCAO PUBLICADA NA RPI 2385 DE 20-09-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDA A EXTINCAO DA PATENTE E SEUS CERTIFICADOS, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |