BG41974A1 - Hall sensor - Google Patents

Hall sensor

Info

Publication number
BG41974A1
BG41974A1 BG7477686A BG7477686A BG41974A1 BG 41974 A1 BG41974 A1 BG 41974A1 BG 7477686 A BG7477686 A BG 7477686A BG 7477686 A BG7477686 A BG 7477686A BG 41974 A1 BG41974 A1 BG 41974A1
Authority
BG
Bulgaria
Prior art keywords
external
hall sensor
internal
contacts
current source
Prior art date
Application number
BG7477686A
Inventor
Rumenin
Kostov
Original Assignee
Rumenin
Kostov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rumenin, Kostov filed Critical Rumenin
Priority to BG7477686A priority Critical patent/BG41974A1/en
Publication of BG41974A1 publication Critical patent/BG41974A1/en

Links

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

The Hall sensor contains a semiconductor substrate with extrinsic conductivity on one side of which three rectangular ohmic contacts - two external and one internal - are placed at equal distance and parallel to each other, current source and external magnetic field, applied perpendicularly to the cross-section of the structure, characterised by the direct connection of the two external ohmic contacts to the current source, beyond the area restricted by the two external contacts and symmetrically positioned to the internal contact forming a fourth rectangular ohmic contact with the outlet of the Hall sensor located between the internal and fourth ohmic contact. The authorship claims are formulated in a single point
BG7477686A 1986-05-06 1986-05-06 Hall sensor BG41974A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
BG7477686A BG41974A1 (en) 1986-05-06 1986-05-06 Hall sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BG7477686A BG41974A1 (en) 1986-05-06 1986-05-06 Hall sensor

Publications (1)

Publication Number Publication Date
BG41974A1 true BG41974A1 (en) 1987-09-15

Family

ID=3917192

Family Applications (1)

Application Number Title Priority Date Filing Date
BG7477686A BG41974A1 (en) 1986-05-06 1986-05-06 Hall sensor

Country Status (1)

Country Link
BG (1) BG41974A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BG65231B1 (en) * 2002-06-25 2007-08-31 Чавдар РУМЕНИН Magnetosensitive sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BG65231B1 (en) * 2002-06-25 2007-08-31 Чавдар РУМЕНИН Magnetosensitive sensor

Similar Documents

Publication Publication Date Title
ATE29340T1 (en) INTEGRABLE HALL ELEMENT.
ES284357U (en) Electrical contact member.
DE3766385D1 (en) MECHANISM TO SNAP AND DISCONNECT AN ELECTRICAL SWITCH WITH MAIN AND AUXILIARY CIRCUITS.
DE3881922T2 (en) Composite semiconductor device with non-alloy ohmic contacts.
DE3688518D1 (en) SEMICONDUCTOR ARRANGEMENTS WITH CONDUCTIVITY MODULATION.
YU46405B (en) INTEGRABLE HALL ELEMENT
ATE82436T1 (en) MULTI-POLE PLUG-IN COUPLING HALF FOR ELECTRICAL CABLES.
JPS57208177A (en) Semiconductor negative resistance element
EP0348916A3 (en) Mosfet equivalent voltage drive semiconductor device
JPS5721838A (en) Semiconductor device
BG41974A1 (en) Hall sensor
DE3688809T2 (en) MISFET semiconductor device with reduced leakage current.
EP0193842A3 (en) Integrated semiconductor circuit with two epitaxial layers of different conductivity types
DE3677715D1 (en) MULTIPOLE LOW VOLTAGE CIRCUIT BREAKER WITH BUSBAR.
JPS57201062A (en) Semiconductor device
DE59813600D1 (en) VERTICAL IGBT WITH AN SOI STRUCTURE
JPS5544743A (en) Manufacture of semiconductor device
IT8567673A1 (en) Semiconductor device, particularly thyristor, with disc-shaped electrical connector.
JPS6480073A (en) Semiconductor device
JPS57162356A (en) Integrated circuit device
BG44192A1 (en) Instrument of hall
DE3685944D1 (en) NON-SATURED CURRENT SEMICONDUCTOR ARRANGEMENT WITH TWO CURRENT PATHS.
JPS556847A (en) Semiconductor device
JPS6484733A (en) Semiconductor device
JPS5339088A (en) Insulated gate type field effect semiconductor device