BG41974A1 - Hall sensor - Google Patents
Hall sensorInfo
- Publication number
- BG41974A1 BG41974A1 BG7477686A BG7477686A BG41974A1 BG 41974 A1 BG41974 A1 BG 41974A1 BG 7477686 A BG7477686 A BG 7477686A BG 7477686 A BG7477686 A BG 7477686A BG 41974 A1 BG41974 A1 BG 41974A1
- Authority
- BG
- Bulgaria
- Prior art keywords
- external
- hall sensor
- internal
- contacts
- current source
- Prior art date
Links
Landscapes
- Hall/Mr Elements (AREA)
Abstract
The Hall sensor contains a semiconductor substrate with extrinsic conductivity on one side of which three rectangular ohmic contacts - two external and one internal - are placed at equal distance and parallel to each other, current source and external magnetic field, applied perpendicularly to the cross-section of the structure, characterised by the direct connection of the two external ohmic contacts to the current source, beyond the area restricted by the two external contacts and symmetrically positioned to the internal contact forming a fourth rectangular ohmic contact with the outlet of the Hall sensor located between the internal and fourth ohmic contact. The authorship claims are formulated in a single point
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BG7477686A BG41974A1 (en) | 1986-05-06 | 1986-05-06 | Hall sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BG7477686A BG41974A1 (en) | 1986-05-06 | 1986-05-06 | Hall sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
BG41974A1 true BG41974A1 (en) | 1987-09-15 |
Family
ID=3917192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BG7477686A BG41974A1 (en) | 1986-05-06 | 1986-05-06 | Hall sensor |
Country Status (1)
Country | Link |
---|---|
BG (1) | BG41974A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BG65231B1 (en) * | 2002-06-25 | 2007-08-31 | Чавдар РУМЕНИН | Magnetosensitive sensor |
-
1986
- 1986-05-06 BG BG7477686A patent/BG41974A1/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BG65231B1 (en) * | 2002-06-25 | 2007-08-31 | Чавдар РУМЕНИН | Magnetosensitive sensor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE29340T1 (en) | INTEGRABLE HALL ELEMENT. | |
ES284357U (en) | Electrical contact member. | |
DE3766385D1 (en) | MECHANISM TO SNAP AND DISCONNECT AN ELECTRICAL SWITCH WITH MAIN AND AUXILIARY CIRCUITS. | |
DE3881922T2 (en) | Composite semiconductor device with non-alloy ohmic contacts. | |
DE3688518D1 (en) | SEMICONDUCTOR ARRANGEMENTS WITH CONDUCTIVITY MODULATION. | |
YU46405B (en) | INTEGRABLE HALL ELEMENT | |
ATE82436T1 (en) | MULTI-POLE PLUG-IN COUPLING HALF FOR ELECTRICAL CABLES. | |
JPS57208177A (en) | Semiconductor negative resistance element | |
EP0348916A3 (en) | Mosfet equivalent voltage drive semiconductor device | |
JPS5721838A (en) | Semiconductor device | |
BG41974A1 (en) | Hall sensor | |
DE3688809T2 (en) | MISFET semiconductor device with reduced leakage current. | |
EP0193842A3 (en) | Integrated semiconductor circuit with two epitaxial layers of different conductivity types | |
DE3677715D1 (en) | MULTIPOLE LOW VOLTAGE CIRCUIT BREAKER WITH BUSBAR. | |
JPS57201062A (en) | Semiconductor device | |
DE59813600D1 (en) | VERTICAL IGBT WITH AN SOI STRUCTURE | |
JPS5544743A (en) | Manufacture of semiconductor device | |
IT8567673A1 (en) | Semiconductor device, particularly thyristor, with disc-shaped electrical connector. | |
JPS6480073A (en) | Semiconductor device | |
JPS57162356A (en) | Integrated circuit device | |
BG44192A1 (en) | Instrument of hall | |
DE3685944D1 (en) | NON-SATURED CURRENT SEMICONDUCTOR ARRANGEMENT WITH TWO CURRENT PATHS. | |
JPS556847A (en) | Semiconductor device | |
JPS6484733A (en) | Semiconductor device | |
JPS5339088A (en) | Insulated gate type field effect semiconductor device |