BG17856A1 - - Google Patents
Info
- Publication number
- BG17856A1 BG17856A1 BG17315A BG1731571A BG17856A1 BG 17856 A1 BG17856 A1 BG 17856A1 BG 17315 A BG17315 A BG 17315A BG 1731571 A BG1731571 A BG 1731571A BG 17856 A1 BG17856 A1 BG 17856A1
- Authority
- BG
- Bulgaria
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/10—Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Catalysts (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1474799 | 1970-08-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BG17856A1 true BG17856A1 (en:Method) | 1974-03-05 |
Family
ID=20457209
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BG17315A BG17856A1 (en:Method) | 1970-08-17 | 1971-04-10 |
Country Status (7)
| Country | Link |
|---|---|
| BG (1) | BG17856A1 (en:Method) |
| CH (1) | CH561154A5 (en:Method) |
| CS (1) | CS155465B1 (en:Method) |
| FR (1) | FR2083234A5 (en:Method) |
| GB (1) | GB1316045A (en:Method) |
| PL (1) | PL76524B1 (en:Method) |
| ZA (1) | ZA712103B (en:Method) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4201757A (en) * | 1973-09-06 | 1980-05-06 | General Electric Company | Large boron nitride abrasive particles |
| FR2495597A1 (fr) * | 1980-08-26 | 1982-06-11 | Inst Sverkhtverdykh Mat | Procede de preparation de nitrure de bore cubique et produit obtenu par ledit procede |
| US4349517A (en) * | 1980-10-21 | 1982-09-14 | Lysanov Vladislav S | Method of producing cubic boron nitride |
| JPS60200864A (ja) * | 1984-03-22 | 1985-10-11 | 東芝タンガロイ株式会社 | 立方晶窒化ホウ素を含む焼結体を製造する方法 |
| FR2724645B1 (fr) * | 1994-09-19 | 1997-01-24 | Centre Nat Rech Scient | Procede d'obtention de bn cubique par une methode solvothermale avec utilisation d'hydrazine comme solvant |
-
1971
- 1971-03-23 FR FR7110194A patent/FR2083234A5/fr not_active Expired
- 1971-03-27 PL PL1971147163A patent/PL76524B1/pl unknown
- 1971-03-31 ZA ZA712103A patent/ZA712103B/xx unknown
- 1971-04-10 BG BG17315A patent/BG17856A1/xx unknown
- 1971-04-19 GB GB2411971*A patent/GB1316045A/en not_active Expired
- 1971-04-22 CS CS293071A patent/CS155465B1/cs unknown
- 1971-08-12 CH CH1186371A patent/CH561154A5/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE2112923B2 (de) | 1975-09-11 |
| ZA712103B (en) | 1972-01-26 |
| CS155465B1 (en:Method) | 1974-05-30 |
| DE2112923A1 (de) | 1972-02-24 |
| PL76524B1 (en:Method) | 1975-02-28 |
| CH561154A5 (en:Method) | 1975-04-30 |
| FR2083234A5 (en:Method) | 1971-12-10 |
| GB1316045A (en) | 1973-05-09 |