BG112848A - Hall effect semiconductor device - Google Patents

Abstract

The Hall effect semiconductor device comprises three identical semiconductor wafers with an n-type hopping conduction, arranged in parallel - first (1), second (2) and third (3), and current source (4). On one side of each of the wafers (1, 2 and 3) at equal distances from each other are formed respectively three rectangular ohmic contacts, parallel to their long sides - first (5, 6 and 7), second (8, 9 and 10), and third (11, 12 and 13), as the second contacts (8, 9 and 10) are central and the first (5, 6 and 7) and third (11, 12 and 13) are symmetrical to them. One terminal of the current source (4) is connected to the central contact (9) of the second wafer (2), and the other to the first contact (5) of the first wafer (1) and to the third contact (13) of the third (3) one. The third contact (11) of the first wafer (1) is connected to the first contact (6) of the second (2) one, the third contact (12) of which is connected to the first contact (7) of the third wafer (3). The differential output (14) of the Hall effect device are the second contacts (8 and 10) of the first (1) and third (3) wafers, the measured magnetic field (15) is parallel to the planes of the wafers (1, 2 and 3) and to the long sides of the contacts (5, 6, 7, 8, 9, 10, 11, 12 and 13).