BG110397A - Method for receiving devices for mems with electric elements on their sidewalls - Google Patents

Method for receiving devices for mems with electric elements on their sidewalls

Info

Publication number
BG110397A
BG110397A BG10110397A BG11039709A BG110397A BG 110397 A BG110397 A BG 110397A BG 10110397 A BG10110397 A BG 10110397A BG 11039709 A BG11039709 A BG 11039709A BG 110397 A BG110397 A BG 110397A
Authority
BG
Bulgaria
Prior art keywords
sidewalls
electric elements
devices
mems
measurements
Prior art date
Application number
BG10110397A
Other languages
Bulgarian (bg)
Inventor
Владимир СТАВРОВ
Original Assignee
Амг Технолоджи Оод
Владимир СТАВРОВ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Амг Технолоджи Оод, Владимир СТАВРОВ filed Critical Амг Технолоджи Оод
Priority to BG10110397A priority Critical patent/BG110397A/en
Priority to PCT/BG2010/000007 priority patent/WO2010139034A2/en
Publication of BG110397A publication Critical patent/BG110397A/en
Priority to BG111095A priority patent/BG66488B1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/032—Bimorph and unimorph actuators, e.g. piezo and thermo
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0742—Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

The invention relates to a method for receiving devices for Micro-Electro-Mechanical Systems (MEMS) with electric elements on their sidewalls, which finds application in the preparation of microstructures with diverse electric and mechanical properties that may be used for performing measurements in various technical fields. The method is a three-phase one, and with reiterated repetition of processes of masks creation and building protective layers, structuring the masks, ligating by high-temperature ion diffusion and following pickling, performed on unyielding semiconductor basic structures,e.g. monocrystal silicon basic structures, provides possibility for building electric elements on the sidewalls of devices for MEMC. The obtained by the method electric elements may be equal or different, and may be situated on the entire sidewalls of the devices or on part of them. With them may be performed measurements with considerably increased accuracy and sensitivity to impacts in sidewiseand vertical to the device directions, and in some cases may be made direct measurements of absolute values.
BG10110397A 2009-06-05 2009-06-05 Method for receiving devices for mems with electric elements on their sidewalls BG110397A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
BG10110397A BG110397A (en) 2009-06-05 2009-06-05 Method for receiving devices for mems with electric elements on their sidewalls
PCT/BG2010/000007 WO2010139034A2 (en) 2009-06-05 2010-06-01 Method of fabricating mems devices with electrical components in their sidewalls
BG111095A BG66488B1 (en) 2009-06-05 2011-12-01 A method for pr0ducing devices for mems with electric elements in their lateral walls

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BG10110397A BG110397A (en) 2009-06-05 2009-06-05 Method for receiving devices for mems with electric elements on their sidewalls

Publications (1)

Publication Number Publication Date
BG110397A true BG110397A (en) 2010-12-30

Family

ID=43034427

Family Applications (2)

Application Number Title Priority Date Filing Date
BG10110397A BG110397A (en) 2009-06-05 2009-06-05 Method for receiving devices for mems with electric elements on their sidewalls
BG111095A BG66488B1 (en) 2009-06-05 2011-12-01 A method for pr0ducing devices for mems with electric elements in their lateral walls

Family Applications After (1)

Application Number Title Priority Date Filing Date
BG111095A BG66488B1 (en) 2009-06-05 2011-12-01 A method for pr0ducing devices for mems with electric elements in their lateral walls

Country Status (2)

Country Link
BG (2) BG110397A (en)
WO (1) WO2010139034A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012215262B4 (en) * 2012-08-28 2020-08-20 Robert Bosch Gmbh Micromechanical structure and corresponding manufacturing process
AT520955B1 (en) 2018-01-18 2020-08-15 Engel Austria Gmbh Measuring device for measuring the distance between two selected points
EP3644009A1 (en) 2018-10-24 2020-04-29 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Elongation measuring structure with a structured support

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200353A (en) 1987-06-29 1993-04-06 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having trench capacitor
JPH05196458A (en) 1991-01-04 1993-08-06 Univ Leland Stanford Jr Piezoresistance cantilever structure for atomic power microscope
US5177030A (en) 1991-07-03 1993-01-05 Micron Technology, Inc. Method of making self-aligned vertical intrinsic resistance
US5316978A (en) 1993-03-25 1994-05-31 Northern Telecom Limited Forming resistors for intergrated circuits
US5444244A (en) 1993-06-03 1995-08-22 Park Scientific Instruments Corporation Piezoresistive cantilever with integral tip for scanning probe microscope
US5959200A (en) * 1997-08-27 1999-09-28 The Board Of Trustees Of The Leland Stanford Junior University Micromachined cantilever structure providing for independent multidimensional force sensing using high aspect ratio beams
US6025208A (en) 1997-08-27 2000-02-15 The Board Of Trustees Of The Leland Stanford Junior University Method of making electrical elements on the sidewalls of micromechanical structures
US6389899B1 (en) * 1998-06-09 2002-05-21 The Board Of Trustees Of The Leland Stanford Junior University In-plane micromachined accelerometer and bridge circuit having same
WO2006060937A1 (en) * 2004-12-10 2006-06-15 Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Of Sciences A mems device including a laterally movable portion wiht piezo-resistive sensing elements and electrostatic actuating elements on trench side walls and methods for producing the same
US7375000B2 (en) 2005-08-22 2008-05-20 International Business Machines Corporation Discrete on-chip SOI resistors

Also Published As

Publication number Publication date
WO2010139034A3 (en) 2011-05-12
BG66488B1 (en) 2015-05-29
BG111095A (en) 2012-07-31
WO2010139034A4 (en) 2011-06-30
WO2010139034A2 (en) 2010-12-09

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