WO2010139034A3 - Method of fabricating mems devices with electrical components in their sidewalls - Google Patents

Method of fabricating mems devices with electrical components in their sidewalls Download PDF

Info

Publication number
WO2010139034A3
WO2010139034A3 PCT/BG2010/000007 BG2010000007W WO2010139034A3 WO 2010139034 A3 WO2010139034 A3 WO 2010139034A3 BG 2010000007 W BG2010000007 W BG 2010000007W WO 2010139034 A3 WO2010139034 A3 WO 2010139034A3
Authority
WO
WIPO (PCT)
Prior art keywords
sidewalls
electrical components
devices
mems devices
mems
Prior art date
Application number
PCT/BG2010/000007
Other languages
French (fr)
Other versions
WO2010139034A4 (en
WO2010139034A2 (en
Inventor
Vladimir Stavrov
Original Assignee
Amg Technology Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amg Technology Ltd. filed Critical Amg Technology Ltd.
Publication of WO2010139034A2 publication Critical patent/WO2010139034A2/en
Publication of WO2010139034A3 publication Critical patent/WO2010139034A3/en
Publication of WO2010139034A4 publication Critical patent/WO2010139034A4/en
Priority to BG111095A priority Critical patent/BG66488B1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/032—Bimorph and unimorph actuators, e.g. piezo and thermo
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0742—Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

The method of fabricating devices for microelectromechanical systems (MEMS) with electrical components in their sidewalls is applicable for the production of microstructures with various electrical and mechanical properties that can be used for sensing in different technical areas. The method consists of three stages and through numerous repetitions of processes of creation of protective layers, photolithographical patterning, consecutive etching processes and doping via high temperature ion diffusion performed over non-deformable semiconductor basic structures, for example monocrystalline Silicon basic structures, it gives opportunity of building of electrical components in the sidewalls of MEMS devices. The electrical components so obtained can have equal or different parameters and can be disposed in parts of or the whole sidewalls of such devices. With MEMS devices realized according to the claimed method measurements with considerably increased accuracy, precision and sensitivity can be made.
PCT/BG2010/000007 2009-06-05 2010-06-01 Method of fabricating mems devices with electrical components in their sidewalls WO2010139034A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
BG111095A BG66488B1 (en) 2009-06-05 2011-12-01 A method for pr0ducing devices for mems with electric elements in their lateral walls

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
BG10110397A BG110397A (en) 2009-06-05 2009-06-05 Method for receiving devices for mems with electric elements on their sidewalls
BG110397 2009-06-05

Publications (3)

Publication Number Publication Date
WO2010139034A2 WO2010139034A2 (en) 2010-12-09
WO2010139034A3 true WO2010139034A3 (en) 2011-05-12
WO2010139034A4 WO2010139034A4 (en) 2011-06-30

Family

ID=43034427

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/BG2010/000007 WO2010139034A2 (en) 2009-06-05 2010-06-01 Method of fabricating mems devices with electrical components in their sidewalls

Country Status (2)

Country Link
BG (2) BG110397A (en)
WO (1) WO2010139034A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012215262B4 (en) * 2012-08-28 2020-08-20 Robert Bosch Gmbh Micromechanical structure and corresponding manufacturing process
AT520955B1 (en) 2018-01-18 2020-08-15 Engel Austria Gmbh Measuring device for measuring the distance between two selected points
EP3644009A1 (en) 2018-10-24 2020-04-29 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Elongation measuring structure with a structured support

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5959200A (en) * 1997-08-27 1999-09-28 The Board Of Trustees Of The Leland Stanford Junior University Micromachined cantilever structure providing for independent multidimensional force sensing using high aspect ratio beams
US6389899B1 (en) * 1998-06-09 2002-05-21 The Board Of Trustees Of The Leland Stanford Junior University In-plane micromachined accelerometer and bridge circuit having same
WO2006060937A1 (en) * 2004-12-10 2006-06-15 Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Of Sciences A mems device including a laterally movable portion wiht piezo-resistive sensing elements and electrostatic actuating elements on trench side walls and methods for producing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200353A (en) 1987-06-29 1993-04-06 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device having trench capacitor
JPH05196458A (en) 1991-01-04 1993-08-06 Univ Leland Stanford Jr Piezoresistance cantilever structure for atomic power microscope
US5177030A (en) 1991-07-03 1993-01-05 Micron Technology, Inc. Method of making self-aligned vertical intrinsic resistance
US5316978A (en) 1993-03-25 1994-05-31 Northern Telecom Limited Forming resistors for intergrated circuits
US5444244A (en) 1993-06-03 1995-08-22 Park Scientific Instruments Corporation Piezoresistive cantilever with integral tip for scanning probe microscope
US6025208A (en) 1997-08-27 2000-02-15 The Board Of Trustees Of The Leland Stanford Junior University Method of making electrical elements on the sidewalls of micromechanical structures
US7375000B2 (en) 2005-08-22 2008-05-20 International Business Machines Corporation Discrete on-chip SOI resistors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5959200A (en) * 1997-08-27 1999-09-28 The Board Of Trustees Of The Leland Stanford Junior University Micromachined cantilever structure providing for independent multidimensional force sensing using high aspect ratio beams
US6389899B1 (en) * 1998-06-09 2002-05-21 The Board Of Trustees Of The Leland Stanford Junior University In-plane micromachined accelerometer and bridge circuit having same
WO2006060937A1 (en) * 2004-12-10 2006-06-15 Shanghai Institute Of Microsystem And Information Technology, Chinese Academy Of Sciences A mems device including a laterally movable portion wiht piezo-resistive sensing elements and electrostatic actuating elements on trench side walls and methods for producing the same

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JIACHOU WANG ET AL: "A Vertical Sidewall Surface Piezoresistor Technology Based on DRIE and Its Typical Application in Micro xy-Stages", 15 October 2008, INTELLIGENT ROBOTICS AND APPLICATIONS; [LECTURE NOTES IN COMPUTER SCIENCE], SPRINGER BERLIN HEIDELBERG, BERLIN, HEIDELBERG, PAGE(S) 170 - 177, ISBN: 978-3-540-88516-0, XP019120947 *
LI XINXIN ET AL: "Single-wafer-processed trench-sidewall integration and its application in a micro resonant detector for vacuum monitoring", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AVS / AIP, MELVILLE, NEW YORK, NY, US, vol. 24, no. 1, 10 January 2006 (2006-01-10), pages 16 - 19, XP012091256, ISSN: 1071-1023, DOI: DOI:10.1116/1.2137337 *
WEN C C ET AL: "Tuning the sensing range and sensitivity of three axes tactile sensors using the polymer composite membrane", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 145-146, 1 July 2008 (2008-07-01), pages 14 - 22, XP022716410, ISSN: 0924-4247, [retrieved on 20071013], DOI: DOI:10.1016/J.SNA.2007.10.011 *

Also Published As

Publication number Publication date
BG66488B1 (en) 2015-05-29
BG111095A (en) 2012-07-31
BG110397A (en) 2010-12-30
WO2010139034A4 (en) 2011-06-30
WO2010139034A2 (en) 2010-12-09

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