BE844064A - Procede de superfinition des surfaces de semi-conducteurs - Google Patents

Procede de superfinition des surfaces de semi-conducteurs

Info

Publication number
BE844064A
BE844064A BE168855A BE168855A BE844064A BE 844064 A BE844064 A BE 844064A BE 168855 A BE168855 A BE 168855A BE 168855 A BE168855 A BE 168855A BE 844064 A BE844064 A BE 844064A
Authority
BE
Belgium
Prior art keywords
superfinition
semiconductor surfaces
semiconductor
Prior art date
Application number
BE168855A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE844064A publication Critical patent/BE844064A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
BE168855A 1975-07-14 1976-07-13 Procede de superfinition des surfaces de semi-conducteurs BE844064A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE752531431A DE2531431C3 (de) 1975-07-14 1975-07-14 Poliermittel zur Herstellung schleierfreier Halbleiteroberflächen

Publications (1)

Publication Number Publication Date
BE844064A true BE844064A (fr) 1977-01-13

Family

ID=5951491

Family Applications (1)

Application Number Title Priority Date Filing Date
BE168855A BE844064A (fr) 1975-07-14 1976-07-13 Procede de superfinition des surfaces de semi-conducteurs

Country Status (9)

Country Link
US (1) US4070797A (fr)
JP (1) JPS5211859A (fr)
BE (1) BE844064A (fr)
DE (1) DE2531431C3 (fr)
DK (1) DK296876A (fr)
FR (1) FR2318499A1 (fr)
GB (1) GB1499490A (fr)
IT (1) IT1066038B (fr)
NL (1) NL7607074A (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4184908A (en) * 1978-10-05 1980-01-22 The United States Of America As Represented By The Secretary Of The Navy Method for polishing cadmium sulfide semiconductors
JPS5693574A (en) * 1979-12-27 1981-07-29 Matsushita Electric Ind Co Ltd Thermal head
JPS59214668A (ja) * 1983-05-20 1984-12-04 Seiko Instr & Electronics Ltd 印字素子駆動制御用集積回路装置
DE3517665A1 (de) * 1985-05-15 1986-11-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum polieren von siliciumscheiben
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
JP2647104B2 (ja) * 1987-11-24 1997-08-27 オルガノ株式会社 半導体ウエハーの製造工程より排出される排水の処理方法
JPH02156530A (ja) * 1988-12-08 1990-06-15 Toshiba Corp 半導体基板の鏡面研磨加工方法
US5320706A (en) * 1991-10-15 1994-06-14 Texas Instruments Incorporated Removing slurry residue from semiconductor wafer planarization
GB2299895B (en) * 1992-05-26 1997-01-08 Toshiba Kk polishing apparatus for planarizing layer on a semiconductor wafer
JP3640317B2 (ja) * 1995-04-13 2005-04-20 昭和電工株式会社 テクスチャリング加工用組成物
US6110820A (en) * 1995-06-07 2000-08-29 Micron Technology, Inc. Low scratch density chemical mechanical planarization process
US6409936B1 (en) 1999-02-16 2002-06-25 Micron Technology, Inc. Composition and method of formation and use therefor in chemical-mechanical polishing
US6426295B1 (en) * 1999-02-16 2002-07-30 Micron Technology, Inc. Reduction of surface roughness during chemical mechanical planarization(CMP)
CN101367189A (zh) * 2007-08-15 2009-02-18 江苏海迅实业集团股份有限公司 硅片抛光表面划伤的控制方法
US8435896B2 (en) * 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US9416298B2 (en) * 2012-05-23 2016-08-16 Basf Se Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (CMP) of III-V material in the presence of a CMP composition comprising a specific non-ionic surfactant

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2961354A (en) * 1958-10-28 1960-11-22 Bell Telephone Labor Inc Surface treatment of semiconductive devices
US3458300A (en) * 1966-07-05 1969-07-29 Wyandotte Chemicals Corp Abrasive cleaning compositions
US3471341A (en) * 1967-03-20 1969-10-07 Int Rectifier Corp Method of preparing semiconductor wafers for diffusion
DE1752163A1 (de) * 1968-04-11 1971-05-13 Wacker Chemie Gmbh Verfahren zum Polieren von Halbleiteroberflaechen
US3540891A (en) * 1968-06-14 1970-11-17 Indiana University Foundation Household cleaning and polishing composition
US3576750A (en) * 1969-04-30 1971-04-27 Indiana University Foundation Compositions for polishing acrylic materials
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
US3754941A (en) * 1971-01-04 1973-08-28 Colgate Palmolive Co Removal of metallic stains from porcelain surfaces
US3807979A (en) * 1972-05-08 1974-04-30 Philadelphia Quartz Co Quaternary ammonium silicate for polishing silicon metal
DE2247067C3 (de) * 1972-09-26 1979-08-09 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen
GB1471278A (en) * 1973-07-06 1977-04-21 Colgate Palmolive Co Liquid abrasive compositions
US3922393A (en) * 1974-07-02 1975-11-25 Du Pont Process for polishing silicon and germanium semiconductor materials
US4022625A (en) * 1974-12-24 1977-05-10 Nl Industries, Inc. Polishing composition and method of polishing

Also Published As

Publication number Publication date
FR2318499A1 (fr) 1977-02-11
DE2531431B2 (de) 1978-06-22
NL7607074A (nl) 1977-01-18
US4070797A (en) 1978-01-31
DK296876A (da) 1977-01-15
FR2318499B1 (fr) 1978-06-30
DE2531431A1 (de) 1977-01-27
DE2531431C3 (de) 1979-03-01
GB1499490A (en) 1978-02-01
JPS5211859A (en) 1977-01-29
IT1066038B (it) 1985-03-04

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