BE825855A - Procede d'obtention d'ilots entierement isoles pour circuits integres du type mos ou bipolaire - Google Patents

Procede d'obtention d'ilots entierement isoles pour circuits integres du type mos ou bipolaire

Info

Publication number
BE825855A
BE825855A BE1006473A BE1006473A BE825855A BE 825855 A BE825855 A BE 825855A BE 1006473 A BE1006473 A BE 1006473A BE 1006473 A BE1006473 A BE 1006473A BE 825855 A BE825855 A BE 825855A
Authority
BE
Belgium
Prior art keywords
mos
integrated circuits
bipolar type
isolated islands
fully isolated
Prior art date
Application number
BE1006473A
Other languages
English (en)
French (fr)
Inventor
V Rodriguez
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE825855A publication Critical patent/BE825855A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
BE1006473A 1974-02-26 1975-02-24 Procede d'obtention d'ilots entierement isoles pour circuits integres du type mos ou bipolaire BE825855A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7406492A FR2262406B1 (https=) 1974-02-26 1974-02-26

Publications (1)

Publication Number Publication Date
BE825855A true BE825855A (fr) 1975-08-25

Family

ID=9135457

Family Applications (1)

Application Number Title Priority Date Filing Date
BE1006473A BE825855A (fr) 1974-02-26 1975-02-24 Procede d'obtention d'ilots entierement isoles pour circuits integres du type mos ou bipolaire

Country Status (7)

Country Link
JP (1) JPS50126181A (https=)
BE (1) BE825855A (https=)
DE (1) DE2508091A1 (https=)
FR (1) FR2262406B1 (https=)
GB (1) GB1480129A (https=)
IT (1) IT1030218B (https=)
NL (1) NL7502154A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086011A (en) * 1987-01-27 1992-02-04 Advanced Micro Devices, Inc. Process for producing thin single crystal silicon islands on insulator
CN112938894B (zh) * 2021-03-11 2024-06-28 中北大学 一种多层次立体化的mems器件抗冲击防护结构的制备方法

Also Published As

Publication number Publication date
GB1480129A (en) 1977-07-20
IT1030218B (it) 1979-03-30
DE2508091A1 (de) 1975-08-28
JPS50126181A (https=) 1975-10-03
NL7502154A (nl) 1975-08-28
FR2262406B1 (https=) 1982-02-19
FR2262406A1 (https=) 1975-09-19

Similar Documents

Publication Publication Date Title
RO69285A (ro) Procedeu pentru prepararea diacetatului de etilidena
BE839972A (fr) Procede pour la fabrication d'un dispositif semiconducteur
BE863916A (fr) Procede pour la production d'ethylene glycol
RO68441A (ro) Procedeu pentru prepararea unor derivati de eritromicilamina
BE793245A (fr) Procede d'elimination de l'inversion a la surface d'un semi-conducteur
BE836341A (fr) Dispositif pour la fabrication de verres d'apres le procede du presse-souffle
RO68145A (ro) Procedeu pentru prepararea unor 3,4-dihidro-2h-1,2-benzo-tiazincarboxamide
PT66174A (fr) Procede pour la preparation de derives de ditiole-1,2 et de compositions qu'en contiennent
RO84249A (ro) Procedeu de obtinere a unor enzime pentru igienobucala
BE825855A (fr) Procede d'obtention d'ilots entierement isoles pour circuits integres du type mos ou bipolaire
FR2280201A1 (fr) Procede pour la fabrication d'un dispositif a semi-conducteurs
FR2278668A1 (fr) Procede pour la fabrication d'alkylacetophenones
RO68500A (ro) Procedeu pentru prepararea unor 1,1-dioxizi ai 4-hidroxi-2h-nafto(2,1-e)-1,2-tiazin-3-carboxamidei
FR2275480A1 (fr) Procede pour la preparation de derives d'azetidone-tiazolidine
JPS5272582A (en) Production of semiconductor device
FR2306976A1 (fr) Procede pour la preparation d'aminoacides
FR2300549A1 (fr) Procede pour l'obtention de compositions parfumantes et compositions obtenues
FR2337432A1 (fr) Perfectionnement a la structure des circuits integres a transistors bipolaires complementaires et procede d'obtention
FR2337431A1 (fr) Perfectionnement a la structure des circuits integres a transistors bipolaires et procede d'obtention
FR2291318A1 (fr) Procede pour la fabrication de coeurs d'aiguille ou de croisement de rails
FR2284981A1 (fr) Procede d'obtention d'un circuit integre semiconducteur
BE833733A (fr) Procede pour la preparation d'agglomeres
BE770524A (fr) Procede pour l'obtention d'hellebrine pure
FR2317255A1 (fr) Procede pour l'interconversion des alcaloides du groupe des heteroyohimbanes
BE836920A (fr) Procede pour l'obtention de beta- chloroethyltrichlorosilane

Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: COMPAGNIE INTERNATIONALE POUR L'INFORMATIQUE

Effective date: 19840224