BE803673A - Procede de fabrication de barreaux monocristallins semi-conducteurs avec une resistance specifique decroissant vers le milieu du barreau - Google Patents

Procede de fabrication de barreaux monocristallins semi-conducteurs avec une resistance specifique decroissant vers le milieu du barreau

Info

Publication number
BE803673A
BE803673A BE134636A BE134636A BE803673A BE 803673 A BE803673 A BE 803673A BE 134636 A BE134636 A BE 134636A BE 134636 A BE134636 A BE 134636A BE 803673 A BE803673 A BE 803673A
Authority
BE
Belgium
Prior art keywords
monocristalline
bars
bar
specific resistance
manufacturing semiconductor
Prior art date
Application number
BE134636A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE803673A publication Critical patent/BE803673A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE134636A 1972-08-16 1973-08-16 Procede de fabrication de barreaux monocristallins semi-conducteurs avec une resistance specifique decroissant vers le milieu du barreau BE803673A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722240301 DE2240301A1 (de) 1972-08-16 1972-08-16 Verfahren zum herstellen von halbleitereinkristallstaeben mit zur stabmitte abfallendem spezifischen widerstand

Publications (1)

Publication Number Publication Date
BE803673A true BE803673A (fr) 1973-12-17

Family

ID=5853716

Family Applications (1)

Application Number Title Priority Date Filing Date
BE134636A BE803673A (fr) 1972-08-16 1973-08-16 Procede de fabrication de barreaux monocristallins semi-conducteurs avec une resistance specifique decroissant vers le milieu du barreau

Country Status (7)

Country Link
JP (2) JPS4947075A (fr)
BE (1) BE803673A (fr)
DE (1) DE2240301A1 (fr)
FR (1) FR2196198B1 (fr)
GB (1) GB1374056A (fr)
IT (1) IT993701B (fr)
NL (1) NL7305059A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56149971U (fr) * 1980-04-10 1981-11-11
JPS57100999A (en) * 1980-12-15 1982-06-23 Hitachi Chem Co Ltd Heat treatment of single crystal of tungstic acid compound
DE3277983D1 (en) * 1981-03-02 1988-02-18 Ici Plc Method of and apparatus for monitoring gaseous pollutants

Also Published As

Publication number Publication date
JPS4947075A (fr) 1974-05-07
NL7305059A (fr) 1974-02-19
FR2196198A1 (fr) 1974-03-15
FR2196198B1 (fr) 1977-02-25
GB1374056A (en) 1974-11-13
JPS53118462U (fr) 1978-09-20
DE2240301A1 (de) 1974-02-28
IT993701B (it) 1975-09-30

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