BE803196A - Thyristor - Google Patents

Thyristor

Info

Publication number
BE803196A
BE803196A BE134217A BE134217A BE803196A BE 803196 A BE803196 A BE 803196A BE 134217 A BE134217 A BE 134217A BE 134217 A BE134217 A BE 134217A BE 803196 A BE803196 A BE 803196A
Authority
BE
Belgium
Prior art keywords
thyristor
Prior art date
Application number
BE134217A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE803196A publication Critical patent/BE803196A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
BE134217A 1972-08-04 1973-08-03 Thyristor BE803196A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722238564 DE2238564C3 (de) 1972-08-04 1972-08-04 Thyristor

Publications (1)

Publication Number Publication Date
BE803196A true BE803196A (fr) 1973-12-03

Family

ID=5852732

Family Applications (1)

Application Number Title Priority Date Filing Date
BE134217A BE803196A (fr) 1972-08-04 1973-08-03 Thyristor

Country Status (8)

Country Link
JP (1) JPS4953782A (xx)
BE (1) BE803196A (xx)
CH (1) CH554074A (xx)
DE (1) DE2238564C3 (xx)
FR (1) FR2195073B1 (xx)
GB (1) GB1436411A (xx)
NL (1) NL7310532A (xx)
SE (1) SE384598B (xx)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109373A (en) * 1980-12-25 1982-07-07 Mitsubishi Electric Corp Semiconductor device
JPS57109372A (en) * 1980-12-25 1982-07-07 Mitsubishi Electric Corp Semiconductor device
JPS6029885Y2 (ja) * 1980-12-28 1985-09-09 株式会社シマノ 釣竿
DE3112940A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb
JPS5927571A (ja) * 1982-08-05 1984-02-14 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
US4514898A (en) * 1983-02-18 1985-05-07 Westinghouse Electric Corp. Method of making a self protected thyristor
GB2135515A (en) * 1983-02-18 1984-08-30 Westinghouse Electric Corp Thyristor self-protected by remote punch through
US4516315A (en) * 1983-05-09 1985-05-14 Westinghouse Electric Corp. Method of making a self-protected thyristor
DE3465222D1 (en) * 1983-05-26 1987-09-10 Gen Electric Voltage breakover protected thyristor having field-containing layer in avalanche voltage breakover zone
DE3931589A1 (de) * 1989-09-22 1991-04-04 Bosch Gmbh Robert Halbleiterschaltelement
US6271545B1 (en) * 1997-01-31 2001-08-07 Siemens Aktiengesellschaft Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior

Also Published As

Publication number Publication date
GB1436411A (en) 1976-05-19
FR2195073B1 (xx) 1978-03-17
DE2238564A1 (de) 1974-02-21
JPS4953782A (xx) 1974-05-24
DE2238564C3 (de) 1981-02-19
CH554074A (de) 1974-09-13
FR2195073A1 (xx) 1974-03-01
SE384598B (sv) 1976-05-10
DE2238564B2 (de) 1980-06-12
NL7310532A (xx) 1974-02-06

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