BE782263A - Procede de realisation de couches minces en alliage tantale-aluminium - Google Patents

Procede de realisation de couches minces en alliage tantale-aluminium

Info

Publication number
BE782263A
BE782263A BE782263A BE782263A BE782263A BE 782263 A BE782263 A BE 782263A BE 782263 A BE782263 A BE 782263A BE 782263 A BE782263 A BE 782263A BE 782263 A BE782263 A BE 782263A
Authority
BE
Belgium
Prior art keywords
tantalum
aluminum alloy
thin layers
making thin
making
Prior art date
Application number
BE782263A
Other languages
English (en)
French (fr)
Inventor
H Basseches
D Gerstenberg
M P Lepselter
A U Macrae
J M Schoen
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE782263A publication Critical patent/BE782263A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • C23C14/5833—Ion beam bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin-film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin-film techniques by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
BE782263A 1971-04-19 1972-04-18 Procede de realisation de couches minces en alliage tantale-aluminium BE782263A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13517871A 1971-04-19 1971-04-19

Publications (1)

Publication Number Publication Date
BE782263A true BE782263A (fr) 1972-08-16

Family

ID=22466901

Family Applications (1)

Application Number Title Priority Date Filing Date
BE782263A BE782263A (fr) 1971-04-19 1972-04-18 Procede de realisation de couches minces en alliage tantale-aluminium

Country Status (10)

Country Link
US (1) US3737343A (enExample)
JP (1) JPS5219317B1 (enExample)
BE (1) BE782263A (enExample)
CA (1) CA952062A (enExample)
DE (1) DE2217775C3 (enExample)
FR (1) FR2133869B1 (enExample)
GB (1) GB1349046A (enExample)
IT (1) IT965772B (enExample)
NL (1) NL149548B (enExample)
SE (1) SE376931B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
LU67831A1 (enExample) * 1972-10-31 1973-08-28 Siemens Ag
DE2429434B2 (de) * 1974-06-19 1979-10-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Widerständen und Kondensatoren in Dunnschichtschaltungen
US4042479A (en) * 1973-12-27 1977-08-16 Fujitsu Ltd. Thin film resistor and a method of producing the same
JPS61295371A (ja) * 1985-06-24 1986-12-26 Nippon Light Metal Co Ltd 窒化アルミニウム層を有するアルミニウム材の製法
IT1248789B (it) * 1990-05-02 1995-01-30 Nippon Sheet Glass Co Ltd Metodo per la produzione di una pellicola di semiconduttore policristallino
US6335062B1 (en) * 1994-09-13 2002-01-01 The United States Of America As Represented By The Secretary Of The Navy Reactive oxygen-assisted ion implantation into metals and products made therefrom
US6692586B2 (en) 2001-05-23 2004-02-17 Rolls-Royce Corporation High temperature melting braze materials for bonding niobium based alloys

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1258259A (en) * 1917-10-05 1918-03-05 Arthur C Schaffer Headlight-controlling means for automobiles or vehicles.
GB1067831A (en) * 1964-03-11 1967-05-03 Ultra Electronics Ltd Improvements in thin film circuits

Also Published As

Publication number Publication date
FR2133869A1 (enExample) 1972-12-01
NL7205047A (enExample) 1972-10-23
GB1349046A (en) 1974-03-27
SE376931B (enExample) 1975-06-16
NL149548B (nl) 1976-05-17
FR2133869B1 (enExample) 1974-07-26
DE2217775A1 (de) 1972-11-02
DE2217775B2 (de) 1974-02-21
JPS5219317B1 (enExample) 1977-05-27
DE2217775C3 (de) 1974-10-31
CA952062A (en) 1974-07-30
US3737343A (en) 1973-06-05
IT965772B (it) 1974-02-11

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTERN ELECTRIC CY INC.

Effective date: 19910430