BE782171A - Procede de fabrication de corps en matiere semiconductrice, avec une longueur quelconque - Google Patents

Procede de fabrication de corps en matiere semiconductrice, avec une longueur quelconque

Info

Publication number
BE782171A
BE782171A BE782171A BE782171A BE782171A BE 782171 A BE782171 A BE 782171A BE 782171 A BE782171 A BE 782171A BE 782171 A BE782171 A BE 782171A BE 782171 A BE782171 A BE 782171A
Authority
BE
Belgium
Prior art keywords
manufacturing
length
semiconductor material
semiconductor
Prior art date
Application number
BE782171A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE782171A publication Critical patent/BE782171A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/073—Hollow body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
BE782171A 1971-04-14 1972-04-14 Procede de fabrication de corps en matiere semiconductrice, avec une longueur quelconque BE782171A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712117933 DE2117933A1 (de) 1971-04-14 1971-04-14 Verfahren zum Herstellen von Hohlkörpern aus Halbleitermaterial von beliebiger Länge

Publications (1)

Publication Number Publication Date
BE782171A true BE782171A (fr) 1972-07-31

Family

ID=5804619

Family Applications (1)

Application Number Title Priority Date Filing Date
BE782171A BE782171A (fr) 1971-04-14 1972-04-14 Procede de fabrication de corps en matiere semiconductrice, avec une longueur quelconque

Country Status (8)

Country Link
US (1) US3748169A (de)
BE (1) BE782171A (de)
CA (1) CA970256A (de)
DE (1) DE2117933A1 (de)
FR (1) FR2133623B1 (de)
GB (1) GB1347369A (de)
IT (1) IT953298B (de)
NL (1) NL7202181A (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3980044A (en) * 1972-03-06 1976-09-14 Balzers Patent Und Beteiligungs Ag Apparatus for depositing thin coats by vaporization under the simultaneous action of an ionized gas
DE2253411C3 (de) * 1972-10-31 1978-06-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von aus Halbleitermaterial bestehenden, direkt beheizbaren Hohlkörpern für Diffusionszwecke
GB1586959A (en) * 1976-08-11 1981-03-25 Dunlop Ltd Method and apparatus for the production of carbon/carbon composite material
DE2637836C2 (de) * 1976-08-21 1983-12-08 M.A.N. Maschinenfabrik Augsburg-Nuernberg Ag, 8000 Muenchen Vorrichtung zum Vernickeln von Bauteilen
DE2740129A1 (de) * 1976-09-18 1978-03-23 Claude John Lancelot Hunt Verfahren und vorrichtung zur metallbedampfung
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
US4179530A (en) * 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
US4123989A (en) * 1977-09-12 1978-11-07 Mobil Tyco Solar Energy Corp. Manufacture of silicon on the inside of a tube
DE2847632A1 (de) * 1977-11-19 1979-05-23 Claude John Lancelot Hunt Vakuummetallisierungsvorrichtung
JPS5591968A (en) * 1978-12-28 1980-07-11 Canon Inc Film forming method by glow discharge
DE3204846A1 (de) * 1982-02-11 1983-08-18 Schott Glaswerke, 6500 Mainz Plasmaverfahren zur innenbeschichtung von glasrohren
GB2119278B (en) * 1982-04-13 1987-04-15 Michael Paul Neary Improvements in or relating to a chemical method
US5084542A (en) * 1990-05-31 1992-01-28 E. I. Du Pont De Nemours And Company Epoxy/isocyanate crosslinked coatings containing 1,3-disubstituted imidazole-2-thione catalysts
US6162298A (en) * 1998-10-28 2000-12-19 The B. F. Goodrich Company Sealed reactant gas inlet for a CVI/CVD furnace

Also Published As

Publication number Publication date
FR2133623B1 (de) 1974-07-26
FR2133623A1 (de) 1972-12-01
NL7202181A (de) 1972-10-17
DE2117933A1 (de) 1972-10-19
IT953298B (it) 1973-08-10
GB1347369A (en) 1974-02-27
CA970256A (en) 1975-07-01
US3748169A (en) 1973-07-24

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