BE768570A - Procede de fabrication de detecteurs de particules a semi-conducteur a structure nip sans zone morte et detecteurs obtenusselon ledit procede - Google Patents

Procede de fabrication de detecteurs de particules a semi-conducteur a structure nip sans zone morte et detecteurs obtenusselon ledit procede

Info

Publication number
BE768570A
BE768570A BE768570A BE768570A BE768570A BE 768570 A BE768570 A BE 768570A BE 768570 A BE768570 A BE 768570A BE 768570 A BE768570 A BE 768570A BE 768570 A BE768570 A BE 768570A
Authority
BE
Belgium
Prior art keywords
detectors
procedure
obtained according
dead zone
manufacturing semiconductor
Prior art date
Application number
BE768570A
Other languages
English (en)
French (fr)
Inventor
A Garin
M Oria
B Waast
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of BE768570A publication Critical patent/BE768570A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/292—Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors
    • H10F30/2925—Li-compensated PIN gamma-ray detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
BE768570A 1970-06-26 1971-06-16 Procede de fabrication de detecteurs de particules a semi-conducteur a structure nip sans zone morte et detecteurs obtenusselon ledit procede BE768570A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7023817A FR2094616A5 (OSRAM) 1970-06-26 1970-06-26

Publications (1)

Publication Number Publication Date
BE768570A true BE768570A (fr) 1971-11-03

Family

ID=9057886

Family Applications (1)

Application Number Title Priority Date Filing Date
BE768570A BE768570A (fr) 1970-06-26 1971-06-16 Procede de fabrication de detecteurs de particules a semi-conducteur a structure nip sans zone morte et detecteurs obtenusselon ledit procede

Country Status (7)

Country Link
BE (1) BE768570A (OSRAM)
CH (1) CH546412A (OSRAM)
DE (1) DE2131755C3 (OSRAM)
ES (1) ES392672A1 (OSRAM)
FR (1) FR2094616A5 (OSRAM)
GB (1) GB1320834A (OSRAM)
IT (1) IT939723B (OSRAM)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2909564C2 (de) * 1979-03-12 1981-01-08 Geraetewerk Lahr Gmbh, 7630 Lahr Einrichtung zur Schwingungsreduktion in einem Schallplattenspieler

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3413528A (en) * 1966-03-03 1968-11-26 Atomic Energy Commission Usa Lithium drifted semiconductor radiation detector
US3413529A (en) * 1966-03-08 1968-11-26 Atomic Energy Commission Usa A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions
FR1532346A (fr) * 1967-04-12 1968-07-12 Centre Nat Rech Scient Perfectionnements aux détecteurs de rayonnements nucléaires, du type diodes n-i-p

Also Published As

Publication number Publication date
IT939723B (it) 1973-02-10
GB1320834A (en) 1973-06-20
DE2131755B2 (de) 1974-10-17
CH546412A (fr) 1974-02-28
ES392672A1 (es) 1975-04-16
DE2131755C3 (de) 1975-06-12
FR2094616A5 (OSRAM) 1972-02-04
DE2131755A1 (de) 1972-01-20

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: COMMISSARIAT A L'ENERGIE ATOMIQUE

Effective date: 19850616