BE752218A - Dispositif semi-conducteur sensible a la lumiere - Google Patents

Dispositif semi-conducteur sensible a la lumiere

Info

Publication number
BE752218A
BE752218A BE752218DA BE752218A BE 752218 A BE752218 A BE 752218A BE 752218D A BE752218D A BE 752218DA BE 752218 A BE752218 A BE 752218A
Authority
BE
Belgium
Prior art keywords
semiconductor device
light sensitive
sensitive semiconductor
light
sensitive
Prior art date
Application number
Other languages
English (en)
Inventor
J S Roberts
D R Muss
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE752218A publication Critical patent/BE752218A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
    • G02B6/2817—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers using reflective elements to split or combine optical signals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
BE752218D 1969-06-20 1970-06-19 Dispositif semi-conducteur sensible a la lumiere BE752218A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83499769A 1969-06-20 1969-06-20

Publications (1)

Publication Number Publication Date
BE752218A true BE752218A (fr) 1970-12-21

Family

ID=25268305

Family Applications (1)

Application Number Title Priority Date Filing Date
BE752218D BE752218A (fr) 1969-06-20 1970-06-19 Dispositif semi-conducteur sensible a la lumiere

Country Status (4)

Country Link
US (1) US3590344A (fr)
BE (1) BE752218A (fr)
FR (1) FR2046976B1 (fr)
GB (1) GB1283484A (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796881A (en) * 1972-04-28 1974-03-12 Westinghouse Electric Corp Encapsulated light activated semiconductor device
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
JPS5071261A (fr) * 1973-10-25 1975-06-13
FR2286507A1 (fr) * 1974-09-27 1976-04-23 Sercel Rech Const Elect Dispositif semi-conducteur emetteur ou recepteur de lumiere avec fibre optique, notamment pour telemetrie
JPS5758075B2 (fr) * 1974-10-19 1982-12-08 Sony Corp
US4167746A (en) * 1975-03-03 1979-09-11 General Electric Company Radiation triggered thyristor with light focussing guide
IN143215B (fr) * 1975-03-25 1977-10-15 Westinghouse Electric Corp
JPS583386B2 (ja) * 1975-10-11 1983-01-21 株式会社日立製作所 ソウホウコウセイホトサイリスタ
US4144541A (en) * 1977-01-27 1979-03-13 Electric Power Research Institute, Inc. Light-activated semiconductor device package unit
JPS52114672U (fr) * 1977-02-28 1977-08-31
US4131905A (en) * 1977-05-26 1978-12-26 Electric Power Research Institute, Inc. Light-triggered thyristor and package therefore
US4207587A (en) * 1977-05-26 1980-06-10 Electric Power Research Institute, Inc. Package for light-triggered thyristor
US4148052A (en) * 1977-10-12 1979-04-03 Westinghouse Electric Corp. Radiant energy sensor
US4301462A (en) * 1978-08-03 1981-11-17 Westinghouse Electric Corp. Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber
US4257058A (en) * 1979-07-05 1981-03-17 Electric Power Research Institute, Inc. Package for radiation triggered semiconductor device and method
JPS5986395A (ja) * 1982-11-09 1984-05-18 Toshiba Corp 光制御装置
US4754130A (en) * 1986-10-31 1988-06-28 Stanford University Method and means for detecting optically transmitted signals and establishing optical interference pattern between electrodes
TW527676B (en) * 2001-01-19 2003-04-11 Matsushita Electric Ind Co Ltd Photo-semiconductor module and method for manufacturing
US7057214B2 (en) * 2003-07-01 2006-06-06 Optiswitch Technology Corporation Light-activated semiconductor switches

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3317746A (en) * 1963-12-10 1967-05-02 Electronic Controls Corp Semiconductor device and circuit
DE1514577B2 (de) * 1965-09-21 1973-06-20 Semikron Gesellschaft fur Gleich richterbau und Elektronik mbH, 8500 Nurn berg Verfahren zum herstellen einer mehrzahl von thyristoren mit legierter kathodenzone
US3422323A (en) * 1966-03-18 1969-01-14 Mallory & Co Inc P R Five-layer light-actuated semiconductor device having bevelled sides
US3444381A (en) * 1967-05-22 1969-05-13 Hughes Aircraft Co Silicon photodiode having folded electrode to increase light path length in body of diode
US3487223A (en) * 1968-07-10 1969-12-30 Us Air Force Multiple internal reflection structure in a silicon detector which is obtained by sandblasting

Also Published As

Publication number Publication date
FR2046976B1 (fr) 1973-01-12
GB1283484A (en) 1972-07-26
US3590344A (en) 1971-06-29
FR2046976A1 (fr) 1971-03-12

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19890630