BE744429A - Bande conductrice d'aluminium dopee avec du cuivre et procede de realisation - Google Patents

Bande conductrice d'aluminium dopee avec du cuivre et procede de realisation

Info

Publication number
BE744429A
BE744429A BE744429DA BE744429A BE 744429 A BE744429 A BE 744429A BE 744429D A BE744429D A BE 744429DA BE 744429 A BE744429 A BE 744429A
Authority
BE
Belgium
Prior art keywords
realization
copper
conductive tape
aluminum doped
doped
Prior art date
Application number
Other languages
English (en)
French (fr)
Inventor
I Ames
F M D Heurle
R E Horstmann
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BE744429A publication Critical patent/BE744429A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/927—Electromigration resistant metallization
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12486—Laterally noncoextensive components [e.g., embedded, etc.]
BE744429D 1969-01-15 1970-01-14 Bande conductrice d'aluminium dopee avec du cuivre et procede de realisation BE744429A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79137169A 1969-01-15 1969-01-15

Publications (1)

Publication Number Publication Date
BE744429A true BE744429A (fr) 1970-07-14

Family

ID=25153531

Family Applications (1)

Application Number Title Priority Date Filing Date
BE744429D BE744429A (fr) 1969-01-15 1970-01-14 Bande conductrice d'aluminium dopee avec du cuivre et procede de realisation

Country Status (10)

Country Link
US (1) US3725309A (enExample)
JP (1) JPS4922397B1 (enExample)
BE (1) BE744429A (enExample)
CA (1) CA939077A (enExample)
CH (1) CH502050A (enExample)
DE (1) DE2001515C3 (enExample)
FR (1) FR2030151B1 (enExample)
GB (1) GB1279741A (enExample)
NL (2) NL167049C (enExample)
SE (1) SE355475B (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3848330A (en) * 1972-06-01 1974-11-19 Motorola Inc Electromigration resistant semiconductor contacts and the method of producing same
US3928027A (en) * 1973-03-27 1975-12-23 Us Energy Nonswelling alloy
US3924264A (en) * 1973-05-17 1975-12-02 Ibm Schottky barrier device and circuit application
US4097663A (en) * 1976-01-29 1978-06-27 Stauffer Chemical Company Low fusion copolymer comprising vinyl chloride, vinyl acetate, and bis(hydrocarbyl)vinylphosphonate
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance
US3987216A (en) * 1975-12-31 1976-10-19 International Business Machines Corporation Method of forming schottky barrier junctions having improved barrier height
JPS5459080A (en) * 1977-10-19 1979-05-12 Nec Corp Semiconductor device
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
JPS5731144A (en) * 1980-07-31 1982-02-19 Fujitsu Ltd Mamufacture of semiconductor device
US4335506A (en) * 1980-08-04 1982-06-22 International Business Machines Corporation Method of forming aluminum/copper alloy conductors
US4373966A (en) * 1981-04-30 1983-02-15 International Business Machines Corporation Forming Schottky barrier diodes by depositing aluminum silicon and copper or binary alloys thereof and alloy-sintering
US4349411A (en) * 1981-10-05 1982-09-14 Bell Telephone Laboratories, Incorporated Etch procedure for aluminum alloy
US4393096A (en) * 1981-11-16 1983-07-12 International Business Machines Corporation Aluminum-copper alloy evaporated films with low via resistance
JPS5884411A (ja) * 1981-11-16 1983-05-20 Tdk Corp 磁気記録媒体の製造方法
GB2131624B (en) * 1982-12-09 1986-07-09 Standard Telephones Cables Ltd Thick film circuits
US4525734A (en) * 1983-03-21 1985-06-25 Syracuse University Hydrogen charged thin film conductor
US4489482A (en) * 1983-06-06 1984-12-25 Fairchild Camera & Instrument Corp. Impregnation of aluminum interconnects with copper
US4549036A (en) * 1984-07-23 1985-10-22 Reichbach Morris M Circular integrated circuit package
EP0261846B1 (en) * 1986-09-17 1992-12-02 Fujitsu Limited Method of forming a metallization film containing copper on the surface of a semiconductor device
US5019891A (en) * 1988-01-20 1991-05-28 Hitachi, Ltd. Semiconductor device and method of fabricating the same
JP2680468B2 (ja) * 1989-07-01 1997-11-19 株式会社東芝 半導体装置および半導体装置の製造方法
US5243221A (en) * 1989-10-25 1993-09-07 At&T Bell Laboratories Aluminum metallization doped with iron and copper to prevent electromigration
US5554889A (en) * 1992-04-03 1996-09-10 Motorola, Inc. Structure and method for metallization of semiconductor devices
EP0606761A3 (en) * 1992-12-28 1995-02-08 Kawasaki Steel Co Semiconductor device and its manufacturing method.
JP3349332B2 (ja) 1995-04-28 2002-11-25 インターナショナル・ビジネス・マシーンズ・コーポレーション 反射式空間光変調素子配列及びその形成方法
JP4083921B2 (ja) * 1998-05-29 2008-04-30 株式会社東芝 半導体装置の製造方法
US6955980B2 (en) * 2002-08-30 2005-10-18 Texas Instruments Incorporated Reducing the migration of grain boundaries
US20100307568A1 (en) * 2009-06-04 2010-12-09 First Solar, Inc. Metal barrier-doped metal contact layer
US11738537B2 (en) 2013-10-30 2023-08-29 San Diego Gas & Electric Company, c/o Sempra Energy Nonconductive films for lighter than air balloons
US20150118460A1 (en) 2013-10-30 2015-04-30 San Diego Gas & Electric company c/o Sempra Energy Nonconductive films for lighter than air balloons

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1658757A (en) * 1926-03-19 1928-02-07 Gen Electric Metal composition
US2569149A (en) * 1945-10-19 1951-09-25 Joseph B Brennan Bimetallic structure
US2706680A (en) * 1952-02-27 1955-04-19 Aluminum Co Of America Aluminum base alloy
US3018198A (en) * 1959-08-13 1962-01-23 Resistance Products Company Film resistor and method of making same
US3318758A (en) * 1963-02-18 1967-05-09 Tellite Corp Method of making a printed circuit board which includes low temperature saturation and the product
US3307978A (en) * 1964-02-17 1967-03-07 Dow Chemical Co Process for preparing high strength fabricated articles from aluminum-base alloys containing copper
US3359141A (en) * 1964-02-18 1967-12-19 Pechiney Prod Chimiques Sa Electrical conductors of aluminum and methods for production of same
FR1449426A (fr) * 1964-10-10 1966-08-12 Nippon Electric Co Dispositif semi-conducteurs utilisant une couche d'un composé d'aluminium et d'or
US3360349A (en) * 1965-04-01 1967-12-26 Sperry Rand Corp Copper layer bonded to a non-conductive layer by means of a copper alloy
NL6617141A (enExample) * 1966-02-11 1967-08-14 Siemens Ag
US3474530A (en) * 1967-02-03 1969-10-28 Ibm Mass production of electronic devices

Also Published As

Publication number Publication date
NL167049C (nl) 1981-10-15
FR2030151B1 (enExample) 1974-02-01
DE2001515B2 (de) 1979-08-09
JPS4922397B1 (enExample) 1974-06-07
NL167049B (nl) 1981-05-15
NL87258C (enExample)
DE2001515C3 (de) 1984-06-20
GB1279741A (en) 1972-06-28
US3725309A (en) 1973-04-03
CA939077A (en) 1973-12-25
FR2030151A1 (enExample) 1970-10-30
SE355475B (enExample) 1973-04-16
CH502050A (de) 1971-01-15
DE2001515A1 (de) 1970-08-27
NL6918641A (enExample) 1970-07-17

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Legal Events

Date Code Title Description
RE20 Patent expired

Owner name: INTERNATIONAL BUSINESS MACHINES CORP.

Effective date: 19900114