Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
  • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
  • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
  • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Computer Hardware Design (AREA)
• Semiconductor Memories (AREA)
• Read Only Memory (AREA)
• Logic Circuits (AREA)
• Static Random-Access Memory (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=25122974

Family Applications (1)

Country Status (9)

Families Citing this family (19)

Family Cites Families (3)

• 1968
  • 1968-12-05 US US781511A patent/US3549911A/en not_active Expired - Lifetime
• 1969
  • 1969-11-28 BR BR214646/69A patent/BR6914646D0/pt unknown
  • 1969-11-28 ES ES374016A patent/ES374016A1/es not_active Expired
  • 1969-12-03 FR FR6941779A patent/FR2025402A1/fr not_active Withdrawn
  • 1969-12-04 BE BE742660D patent/BE742660A/xx unknown
  • 1969-12-04 NL NLAANVRAGE6918231,A patent/NL174001C/xx not_active IP Right Cessation
  • 1969-12-05 DE DE1961125A patent/DE1961125C3/de not_active Expired
  • 1969-12-05 GB GB1288966D patent/GB1288966A/en not_active Expired
• 1973
  • 1973-12-30 MY MY451/73A patent/MY7300451A/xx unknown

Also Published As

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