BE737614A - - Google Patents

Info

Publication number
BE737614A
BE737614A BE737614DA BE737614A BE 737614 A BE737614 A BE 737614A BE 737614D A BE737614D A BE 737614DA BE 737614 A BE737614 A BE 737614A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE737614A publication Critical patent/BE737614A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
BE737614D 1968-08-19 1969-08-18 BE737614A (xx)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5937168 1968-08-19
JP6410068 1968-09-04
JP7267068 1968-10-04

Publications (1)

Publication Number Publication Date
BE737614A true BE737614A (xx) 1970-02-02

Family

ID=27296859

Family Applications (1)

Application Number Title Priority Date Filing Date
BE737614D BE737614A (xx) 1968-08-19 1969-08-18

Country Status (8)

Country Link
US (1) US3763408A (xx)
AT (1) AT326185B (xx)
BE (1) BE737614A (xx)
ES (1) ES370557A1 (xx)
FR (1) FR2015910B1 (xx)
GB (1) GB1265017A (xx)
NL (1) NL154623B (xx)
SE (1) SE355110B (xx)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2104704B1 (xx) * 1970-08-07 1973-11-23 Thomson Csf
US4016643A (en) * 1974-10-29 1977-04-12 Raytheon Company Overlay metallization field effect transistor
US4045594A (en) * 1975-12-31 1977-08-30 Ibm Corporation Planar insulation of conductive patterns by chemical vapor deposition and sputtering
US4262399A (en) * 1978-11-08 1981-04-21 General Electric Co. Ultrasonic transducer fabricated as an integral park of a monolithic integrated circuit
US4261095A (en) * 1978-12-11 1981-04-14 International Business Machines Corporation Self aligned schottky guard ring
US4222164A (en) * 1978-12-29 1980-09-16 International Business Machines Corporation Method of fabrication of self-aligned metal-semiconductor field effect transistors
DE3219598A1 (de) * 1982-05-25 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Schottky-leistungsdiode
FR2558647B1 (fr) * 1984-01-23 1986-05-09 Labo Electronique Physique Transistor a effet de champ de type schottky pour applications hyperfrequences et procede de realisation permettant d'obtenir un tel transistor
JPH0654778B2 (ja) * 1985-04-23 1994-07-20 株式会社東芝 半導体装置及びその製造方法
US4862232A (en) * 1986-09-22 1989-08-29 General Motors Corporation Transistor structure for high temperature logic circuits with insulation around source and drain regions
CA1300763C (en) * 1988-09-29 1992-05-12 Masanori Nishiguchi Semiconductor device radiation hardened mesfet
JPH03292744A (ja) * 1990-01-24 1991-12-24 Toshiba Corp 化合物半導体装置およびその製造方法
JPH10163468A (ja) * 1996-12-03 1998-06-19 Kagaku Gijutsu Shinko Jigyodan 膜状複合構造体
US5804869A (en) * 1997-03-31 1998-09-08 Motorola, Inc. Clamp disposed at edge of a dielectric structure in a semiconductor device and method of forming same
JP3413345B2 (ja) * 1997-05-20 2003-06-03 松下電器産業株式会社 電界効果型トランジスタ及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3087099A (en) * 1959-01-02 1963-04-23 Sprague Electric Co Narrow web mesa transistor structure
US3280391A (en) * 1964-01-31 1966-10-18 Fairchild Camera Instr Co High frequency transistors
FR1433160A (fr) * 1964-05-30 1966-03-25 Telefunken Patent Transistor à base métallique
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor
US3443041A (en) * 1965-06-28 1969-05-06 Bell Telephone Labor Inc Surface-barrier diode transducer using high dielectric semiconductor material
US3514346A (en) * 1965-08-02 1970-05-26 Gen Electric Semiconductive devices having asymmetrically conductive junction
US3322581A (en) * 1965-10-24 1967-05-30 Texas Instruments Inc Fabrication of a metal base transistor
US3518508A (en) * 1965-12-10 1970-06-30 Matsushita Electric Ind Co Ltd Transducer
DE1614829C3 (de) * 1967-06-22 1974-04-04 Telefunken Patentverwertungs Gmbh, 7900 Ulm Verfahren zum Herstellen eines Halbleiterbauelementes

Also Published As

Publication number Publication date
NL154623B (nl) 1977-09-15
ATA790369A (de) 1975-02-15
GB1265017A (xx) 1972-03-01
FR2015910B1 (xx) 1974-06-21
FR2015910A1 (xx) 1970-04-30
AT326185B (de) 1975-11-25
DE1941912A1 (de) 1970-02-26
ES370557A1 (es) 1972-04-16
NL6912526A (xx) 1970-02-23
DE1941912B2 (xx) 1973-10-11
SE355110B (xx) 1973-04-02
US3763408A (en) 1973-10-02

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: MATSUSHITA ELECTRONICS CORP.

Effective date: 19840818