FR1433160A - Transistor à base métallique - Google Patents

Transistor à base métallique

Info

Publication number
FR1433160A
FR1433160A FR16748A FR16748A FR1433160A FR 1433160 A FR1433160 A FR 1433160A FR 16748 A FR16748 A FR 16748A FR 16748 A FR16748 A FR 16748A FR 1433160 A FR1433160 A FR 1433160A
Authority
FR
France
Prior art keywords
metal base
base transistor
transistor
metal
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR16748A
Other languages
English (en)
Inventor
Hans-Juergen Schuetze
Klaus Hennings
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Priority to FR16748A priority Critical patent/FR1433160A/fr
Application granted granted Critical
Publication of FR1433160A publication Critical patent/FR1433160A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
FR16748A 1964-05-30 1965-05-12 Transistor à base métallique Expired FR1433160A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR16748A FR1433160A (fr) 1964-05-30 1965-05-12 Transistor à base métallique

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DET0026279 1964-05-30
FR16748A FR1433160A (fr) 1964-05-30 1965-05-12 Transistor à base métallique

Publications (1)

Publication Number Publication Date
FR1433160A true FR1433160A (fr) 1966-03-25

Family

ID=25999882

Family Applications (1)

Application Number Title Priority Date Filing Date
FR16748A Expired FR1433160A (fr) 1964-05-30 1965-05-12 Transistor à base métallique

Country Status (1)

Country Link
FR (1) FR1433160A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3746950A (en) * 1968-08-27 1973-07-17 Matsushita Electronics Corp Pressure-sensitive schottky barrier semiconductor device having a substantially non-conductive barrier for preventing undesirable reverse-leakage currents and method for making the same
US3763408A (en) * 1968-08-19 1973-10-02 Matsushita Electronics Corp Schottky barrier semiconductor device having a substantially non-conductive barrier for preventing undesirable reverse-leakage currents and method for making the same
US3786320A (en) * 1968-10-04 1974-01-15 Matsushita Electronics Corp Schottky barrier pressure sensitive semiconductor device with air space around periphery of metal-semiconductor junction

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3763408A (en) * 1968-08-19 1973-10-02 Matsushita Electronics Corp Schottky barrier semiconductor device having a substantially non-conductive barrier for preventing undesirable reverse-leakage currents and method for making the same
US3746950A (en) * 1968-08-27 1973-07-17 Matsushita Electronics Corp Pressure-sensitive schottky barrier semiconductor device having a substantially non-conductive barrier for preventing undesirable reverse-leakage currents and method for making the same
US3786320A (en) * 1968-10-04 1974-01-15 Matsushita Electronics Corp Schottky barrier pressure sensitive semiconductor device with air space around periphery of metal-semiconductor junction

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