BE731365A - - Google Patents

Info

Publication number
BE731365A
BE731365A BE731365DA BE731365A BE 731365 A BE731365 A BE 731365A BE 731365D A BE731365D A BE 731365DA BE 731365 A BE731365 A BE 731365A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE731365A publication Critical patent/BE731365A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192Base regions of thyristors
    • H10D62/199Anode base regions of thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192Base regions of thyristors
    • H10D62/206Cathode base regions of thyristors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
BE731365D 1968-04-11 1969-04-10 BE731365A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72066768A 1968-04-11 1968-04-11

Publications (1)

Publication Number Publication Date
BE731365A true BE731365A (enExample) 1969-09-15

Family

ID=24894851

Family Applications (1)

Application Number Title Priority Date Filing Date
BE731365D BE731365A (enExample) 1968-04-11 1969-04-10

Country Status (8)

Country Link
US (1) US3538401A (enExample)
BE (1) BE731365A (enExample)
CH (1) CH499882A (enExample)
DE (1) DE1917013A1 (enExample)
FR (1) FR2006089A1 (enExample)
GB (1) GB1265204A (enExample)
IE (1) IE32729B1 (enExample)
SE (1) SE355111B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3906545A (en) * 1972-01-24 1975-09-16 Licentia Gmbh Thyristor structure
CH543178A (de) * 1972-03-27 1973-10-15 Bbc Brown Boveri & Cie Kontinuierlich steuerbares Leistungshalbleiterbauelement
DE2323592C2 (de) * 1972-06-09 1981-09-17 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor
CH553480A (de) * 1972-10-31 1974-08-30 Siemens Ag Tyristor.
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5147583B2 (enExample) * 1972-12-29 1976-12-15
US3855611A (en) * 1973-04-11 1974-12-17 Rca Corp Thyristor devices
IT1010445B (it) * 1973-05-29 1977-01-10 Rca Corp Raddrizzatore a semiconduttore com mutabile allo stato di non condu zione per mezzo di una tensione ap plicata all elettrodo di porta del lo stesso
US4011579A (en) * 1975-04-07 1977-03-08 Hutson Jearld L Semiconductor gate turn-off device
US4001864A (en) * 1976-01-30 1977-01-04 Gibbons James F Semiconductor p-n junction solar cell and method of manufacture
JPS5942989B2 (ja) * 1977-01-24 1984-10-18 株式会社日立製作所 高耐圧半導体素子およびその製造方法
US4214255A (en) * 1977-02-07 1980-07-22 Rca Corporation Gate turn-off triac with dual low conductivity regions contacting central gate region
JPS5933272B2 (ja) * 1978-06-19 1984-08-14 株式会社日立製作所 半導体装置
JPS5624972A (en) * 1979-08-07 1981-03-10 Mitsubishi Electric Corp Thyristor
EP0074133B1 (de) * 1981-08-25 1987-01-28 BBC Aktiengesellschaft Brown, Boveri & Cie. Thyristor
GB2135118B (en) * 1983-02-09 1986-10-08 Westinghouse Brake & Signal Thyristors
DE19909105A1 (de) * 1999-03-02 2000-09-14 Siemens Ag Symmetrischer Thyristor mit verringerter Dicke und Herstellungsverfahren dafür
DE102008049678B4 (de) 2008-09-30 2020-06-10 Infineon Technologies Bipolar Gmbh & Co. Kg Asymmetrisch sperrender Thyristor und Verfahren zur Herstellung eines asymmetrisch sperrenden Thyristors

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899652A (en) * 1959-08-11 Distance
US3059123A (en) * 1954-10-28 1962-10-16 Bell Telephone Labor Inc Internal field transistor
BE560551A (enExample) * 1956-09-05
US2981874A (en) * 1957-05-31 1961-04-25 Ibm High speed, high current transistor
NL111773C (enExample) * 1958-08-07
NL272752A (enExample) * 1960-12-20
US3152928A (en) * 1961-05-18 1964-10-13 Clevite Corp Semiconductor device and method
FR1402498A (fr) * 1963-07-31 1965-06-11 Ass Elect Ind Perfectionnements apportés aux dispositifs semi-conducteurs notamment aux redresseurs commandés
US3331000A (en) * 1963-10-18 1967-07-11 Gen Electric Gate turn off semiconductor switch having a composite gate region with different impurity concentrations
GB1039915A (en) * 1964-05-25 1966-08-24 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
GB1095576A (enExample) * 1964-08-12 1900-01-01
FR1445215A (fr) * 1964-08-31 1966-07-08 Gen Electric Perfectionnements apportés à des dispositifs semiconducteurs
USB433088I5 (enExample) * 1965-02-16
US3422322A (en) * 1965-08-25 1969-01-14 Texas Instruments Inc Drift transistor
FR1482952A (fr) * 1966-04-12 1967-06-02 Comp Generale Electricite Procédé de fabrication, par épitaxie, de dispositifs semiconducteurs, notamment de thyristors
US3463972A (en) * 1966-06-15 1969-08-26 Fairchild Camera Instr Co Transistor structure with steep impurity gradients having fast transition between the conducting and nonconducting state

Also Published As

Publication number Publication date
GB1265204A (enExample) 1972-03-01
SE355111B (enExample) 1973-04-02
DE1917013A1 (de) 1969-10-23
FR2006089B1 (enExample) 1973-04-06
US3538401A (en) 1970-11-03
CH499882A (de) 1970-11-30
FR2006089A1 (fr) 1969-12-19
IE32729B1 (en) 1973-11-14
IE32729L (en) 1969-10-11

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