BE725244A - - Google Patents

Info

Publication number
BE725244A
BE725244A BE725244DA BE725244A BE 725244 A BE725244 A BE 725244A BE 725244D A BE725244D A BE 725244DA BE 725244 A BE725244 A BE 725244A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE725244A publication Critical patent/BE725244A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2902Materials being Group IVA materials
    • H10P14/2905Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/043Dual dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/10Lift-off masking
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/122Polycrystalline
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/969Simultaneous formation of monocrystalline and polycrystalline regions
BE725244D 1967-12-12 1968-12-11 BE725244A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7996167 1967-12-12

Publications (1)

Publication Number Publication Date
BE725244A true BE725244A (https=) 1969-05-16

Family

ID=13704886

Family Applications (1)

Application Number Title Priority Date Filing Date
BE725244D BE725244A (https=) 1967-12-12 1968-12-11

Country Status (10)

Country Link
US (1) US3692574A (https=)
AT (1) AT283448B (https=)
BE (1) BE725244A (https=)
CH (1) CH486774A (https=)
DE (1) DE1814029C3 (https=)
FR (1) FR1593881A (https=)
GB (1) GB1246294A (https=)
NL (1) NL140101B (https=)
NO (1) NO123439B (https=)
SE (1) SE354382B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4396933A (en) * 1971-06-18 1983-08-02 International Business Machines Corporation Dielectrically isolated semiconductor devices
US3928092A (en) * 1974-08-28 1975-12-23 Bell Telephone Labor Inc Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices
US4022928A (en) * 1975-05-22 1977-05-10 Piwcyzk Bernhard P Vacuum deposition methods and masking structure
GB1520925A (en) * 1975-10-06 1978-08-09 Mullard Ltd Semiconductor device manufacture
EP0009910B1 (en) * 1978-09-20 1985-02-13 Fujitsu Limited Semiconductor memory device and process for fabricating the device
FR2525389A1 (fr) * 1982-04-14 1983-10-21 Commissariat Energie Atomique Procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
US4477308A (en) * 1982-09-30 1984-10-16 At&T Bell Laboratories Heteroepitaxy of multiconstituent material by means of a _template layer
GB2228617A (en) * 1989-02-27 1990-08-29 Philips Electronic Associated A method of manufacturing a semiconductor device having a mesa structure
US5256594A (en) * 1989-06-16 1993-10-26 Intel Corporation Masking technique for depositing gallium arsenide on silicon
KR100186886B1 (ko) * 1993-05-26 1999-04-15 야마자끼 승페이 반도체장치 제작방법
US6090646A (en) 1993-05-26 2000-07-18 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
KR100355938B1 (ko) 1993-05-26 2002-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법

Also Published As

Publication number Publication date
DE1814029A1 (de) 1969-08-14
FR1593881A (https=) 1970-06-01
NL140101B (nl) 1973-10-15
US3692574A (en) 1972-09-19
CH486774A (de) 1970-02-28
NO123439B (https=) 1971-11-15
GB1246294A (en) 1971-09-15
NL6817602A (https=) 1969-06-16
SE354382B (https=) 1973-03-05
DE1814029B2 (de) 1978-02-09
AT283448B (de) 1970-08-10
DE1814029C3 (de) 1979-08-23

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