BE708190A - - Google Patents

Info

Publication number
BE708190A
BE708190A BE708190DA BE708190A BE 708190 A BE708190 A BE 708190A BE 708190D A BE708190D A BE 708190DA BE 708190 A BE708190 A BE 708190A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE708190A publication Critical patent/BE708190A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10W42/00
    • H10W72/536
    • H10W72/5524
BE708190D 1966-12-19 1967-12-19 BE708190A (show.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60283766A 1966-12-19 1966-12-19

Publications (1)

Publication Number Publication Date
BE708190A true BE708190A (show.php) 1968-06-19

Family

ID=24412992

Family Applications (1)

Application Number Title Priority Date Filing Date
BE708190D BE708190A (show.php) 1966-12-19 1967-12-19

Country Status (6)

Country Link
US (1) US3489962A (show.php)
BE (1) BE708190A (show.php)
CH (1) CH478460A (show.php)
ES (1) ES348224A1 (show.php)
GB (1) GB1211745A (show.php)
SE (1) SE322579B (show.php)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3577042A (en) * 1967-06-19 1971-05-04 Int Rectifier Corp Gate connection for controlled rectifiers
CH460957A (de) * 1967-08-03 1968-08-15 Bbc Brown Boveri & Cie Schaltungsanordnung mit mehreren Halbleiterelementen
SE320729B (show.php) * 1968-06-05 1970-02-16 Asea Ab
JPS508315B1 (show.php) * 1970-02-20 1975-04-03
US3740584A (en) * 1971-06-08 1973-06-19 Gen Electric High arrangement frequency scr gating
US3967308A (en) * 1971-10-01 1976-06-29 Hitachi, Ltd. Semiconductor controlled rectifier
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
DE2237086C3 (de) * 1972-07-28 1979-01-18 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Steuerbares Halbleitergleichrichterbauelement
US4028721A (en) * 1973-08-01 1977-06-07 Hitachi, Ltd. Semiconductor controlled rectifier device
US4063278A (en) * 1975-01-06 1977-12-13 Hutson Jearld L Semiconductor switch having sensitive gate characteristics at high temperatures
DE2538549C2 (de) * 1975-08-29 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
US4092703A (en) * 1977-03-15 1978-05-30 Kabushiki Kaisha Meidensha Gate controlled semiconductor device
US4219833A (en) * 1978-05-22 1980-08-26 Electric Power Research Institute, Inc. Multigate light fired thyristor and method
US4207583A (en) * 1978-07-27 1980-06-10 Electric Power Research Institute, Inc. Multiple gated light fired thyristor with non-critical light pipe coupling
US4305084A (en) * 1979-11-16 1981-12-08 General Electric Company Semiconductor switching device capable of turn-on only at low applied voltages using self pinch-off means
JPS6188563A (ja) * 1984-10-08 1986-05-06 Toshiba Corp 半導体スイツチ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3044147A (en) * 1959-04-21 1962-07-17 Pacific Semiconductors Inc Semiconductor technology method of contacting a body
US3176147A (en) * 1959-11-17 1965-03-30 Ibm Parallel connected two-terminal semiconductor devices of different negative resistance characteristics
NL129185C (show.php) * 1960-06-10
FR1324783A (fr) * 1961-06-05 1963-04-19 Gen Electric Perfectionnements aux dispositifs à semi-conducteurs et procédés de leur fabrication
US3296502A (en) * 1962-11-28 1967-01-03 Gen Instrument Corp Variable photosensitive semiconductor device having a graduatingly different operable surface area
US3391310A (en) * 1964-01-13 1968-07-02 Gen Electric Semiconductor switch
US3328584A (en) * 1964-01-17 1967-06-27 Int Rectifier Corp Five-layer light switch
GB1095469A (show.php) * 1964-03-21
US3401320A (en) * 1966-05-12 1968-09-10 Int Rectifier Corp Positive pulse turn-off controlled rectifier

Also Published As

Publication number Publication date
US3489962A (en) 1970-01-13
GB1211745A (en) 1970-11-11
SE322579B (show.php) 1970-04-13
ES348224A1 (es) 1969-03-01
CH478460A (de) 1969-09-15

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