BE704057A - - Google Patents

Info

Publication number
BE704057A
BE704057A BE704057DA BE704057A BE 704057 A BE704057 A BE 704057A BE 704057D A BE704057D A BE 704057DA BE 704057 A BE704057 A BE 704057A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE704057A publication Critical patent/BE704057A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
BE704057D 1966-09-19 1967-09-19 BE704057A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58051666A 1966-09-19 1966-09-19

Publications (1)

Publication Number Publication Date
BE704057A true BE704057A (xx) 1968-02-01

Family

ID=24321420

Family Applications (1)

Application Number Title Priority Date Filing Date
BE704057D BE704057A (xx) 1966-09-19 1967-09-19

Country Status (3)

Country Link
US (1) US3440113A (xx)
BE (1) BE704057A (xx)
GB (1) GB1126309A (xx)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3485684A (en) * 1967-03-30 1969-12-23 Trw Semiconductors Inc Dislocation enhancement control of silicon by introduction of large diameter atomic metals
US3486950A (en) * 1967-04-26 1969-12-30 Motorola Inc Localized control of carrier lifetimes in p-n junction devices and integrated circuits
US3645808A (en) * 1967-07-31 1972-02-29 Hitachi Ltd Method for fabricating a semiconductor-integrated circuit
GB1242085A (en) * 1967-08-18 1971-08-11 Matsushita Electric Ind Co Ltd A recording device
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches
US3905836A (en) * 1968-04-03 1975-09-16 Telefunken Patent Photoelectric semiconductor devices
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
GB1250377A (xx) * 1968-08-24 1971-10-20
US3625781A (en) * 1969-05-09 1971-12-07 Ibm Method of reducing carrier lifetime in semiconductor structures
US3860947A (en) * 1970-03-19 1975-01-14 Hiroshi Gamo Thyristor with gold doping profile
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
US3662232A (en) * 1970-12-10 1972-05-09 Fmc Corp Semiconductor devices having low minority carrier lifetime and process for producing same
US3941625A (en) * 1973-10-11 1976-03-02 General Electric Company Glass passivated gold diffused SCR pellet and method for making
US3943013A (en) * 1973-10-11 1976-03-09 General Electric Company Triac with gold diffused boundary
US4009297A (en) * 1974-02-25 1977-02-22 Amp Incorporated Gold deposition procedures and substrates upon which gold has been deposited
US4177477A (en) * 1974-03-11 1979-12-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching device
US4044372A (en) * 1974-08-05 1977-08-23 Sensor Technology, Inc. Photovoltaic cell having controllable spectral response
US4066484A (en) * 1974-10-24 1978-01-03 General Electric Company Method of manufacture of a gold diffused thyristor
DE2625856C3 (de) * 1976-06-09 1980-04-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement
US4259683A (en) * 1977-02-07 1981-03-31 General Electric Company High switching speed P-N junction devices with recombination means centrally located in high resistivity layer
DE2710701C3 (de) * 1977-03-11 1980-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement
US4307145A (en) * 1981-02-11 1981-12-22 Goldman Daniel S Decorative fabric and method of making the same
FR2508703A1 (fr) * 1981-06-30 1982-12-31 Commissariat Energie Atomique Diode zener compensee en temperature et stable sous irradiation et procede de fabrication d'une telle diode
JPS5821342A (ja) * 1981-07-31 1983-02-08 Hitachi Ltd 半導体装置
DE3131914A1 (de) * 1981-08-12 1983-02-24 Siemens AG, 1000 Berlin und 8000 München Leistungs-mos-feldeffekttransistor und verfahren zu seiner herstellung
JPS6084881A (ja) * 1983-10-17 1985-05-14 Toshiba Corp 大電力ｍｏｓ　ｆｅｔとその製造方法
US4702941A (en) * 1984-03-27 1987-10-27 Motorola Inc. Gold metallization process
KR930003555B1 (ko) * 1988-12-16 1993-05-06 산켄 덴끼 가부시끼가이샤 반도체 장치의 제조방법
DE102007020039B4 (de) * 2007-04-27 2011-07-14 Infineon Technologies Austria Ag Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL241982A (xx) * 1958-08-13 1900-01-01
US3013955A (en) * 1959-04-29 1961-12-19 Fairchild Camera Instr Co Method of transistor manufacture
US3109760A (en) * 1960-02-15 1963-11-05 Cievite Corp P-nu junction and method
US3244566A (en) * 1963-03-20 1966-04-05 Trw Semiconductors Inc Semiconductor and method of forming by diffusion

Also Published As

Publication number Publication date
GB1126309A (en) 1968-09-05
US3440113A (en) 1969-04-22

Similar Documents

Publication Publication Date Title
AT281852B (xx)
AU5917865A (xx)
AU428063B2 (xx)
AU424443B2 (xx)
AU414526B2 (xx)
AU433222B2 (xx)
AU421822B2 (xx)
AU417216B2 (xx)
AU415165B1 (xx)
AU1144366A (xx)
AU6703465A (xx)
AU612166A (xx)
AU1111066A (xx)
AU5895065A (xx)
AU218666A (xx)
BE447356A (xx)
BE618801A (xx)
AU2390066A (xx)
AU407778B2 (xx)
AU415780B2 (xx)
BE637138A (xx)
AU411645B2 (xx)
AU6852465A (xx)
AU855865A (xx)
AU92366A (xx)