BE698329A - - Google Patents

Info

Publication number
BE698329A
BE698329A BE698329DA BE698329A BE 698329 A BE698329 A BE 698329A BE 698329D A BE698329D A BE 698329DA BE 698329 A BE698329 A BE 698329A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE698329A publication Critical patent/BE698329A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
BE698329D 1966-05-12 1967-05-11 BE698329A (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54950166A 1966-05-12 1966-05-12

Publications (1)

Publication Number Publication Date
BE698329A true BE698329A (cs) 1967-11-13

Family

ID=24193262

Family Applications (1)

Application Number Title Priority Date Filing Date
BE698329D BE698329A (cs) 1966-05-12 1967-05-11

Country Status (6)

Country Link
US (1) US3460510A (cs)
BE (1) BE698329A (cs)
DE (1) DE1619956B2 (cs)
FR (1) FR1522791A (cs)
GB (1) GB1125061A (cs)
NL (1) NL6702889A (cs)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1929422B2 (de) * 1969-06-10 1974-08-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial
US4496609A (en) * 1969-10-15 1985-01-29 Applied Materials, Inc. Chemical vapor deposition coating process employing radiant heat and a susceptor
US3696779A (en) * 1969-12-29 1972-10-10 Kokusai Electric Co Ltd Vapor growth device
US3645230A (en) * 1970-03-05 1972-02-29 Hugle Ind Inc Chemical deposition apparatus
DE2054538C3 (de) * 1970-11-05 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von Schichten aus Halbleitermaterial
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate
US3796182A (en) * 1971-12-16 1974-03-12 Applied Materials Tech Susceptor structure for chemical vapor deposition reactor
US4034705A (en) * 1972-05-16 1977-07-12 Siemens Aktiengesellschaft Shaped bodies and production of semiconductor material
US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
JPS50119566A (cs) * 1974-03-01 1975-09-19
US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
US4186684A (en) * 1977-06-01 1980-02-05 Ralph Gorman Apparatus for vapor deposition of materials
US4401689A (en) * 1980-01-31 1983-08-30 Rca Corporation Radiation heated reactor process for chemical vapor deposition on substrates
US4263872A (en) * 1980-01-31 1981-04-28 Rca Corporation Radiation heated reactor for chemical vapor deposition on substrates
US4322592A (en) * 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4565157A (en) * 1983-03-29 1986-01-21 Genus, Inc. Method and apparatus for deposition of tungsten silicides
US4920908A (en) * 1983-03-29 1990-05-01 Genus, Inc. Method and apparatus for deposition of tungsten silicides
JPS60116778A (ja) * 1983-11-23 1985-06-24 ジエミニ　リサーチ，インコーポレイテツド 化学蒸着方法及び装置
US4649261A (en) * 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4615294A (en) * 1984-07-31 1986-10-07 Hughes Aircraft Company Barrel reactor and method for photochemical vapor deposition
US4597986A (en) * 1984-07-31 1986-07-01 Hughes Aircraft Company Method for photochemical vapor deposition
JPS6169962A (ja) * 1984-09-13 1986-04-10 Agency Of Ind Science & Technol 霧化薄膜作製装置
US4694779A (en) * 1984-10-19 1987-09-22 Tetron, Inc. Reactor apparatus for semiconductor wafer processing
US4653428A (en) * 1985-05-10 1987-03-31 General Electric Company Selective chemical vapor deposition apparatus
US4796562A (en) * 1985-12-03 1989-01-10 Varian Associates, Inc. Rapid thermal cvd apparatus
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
US4926793A (en) * 1986-12-15 1990-05-22 Shin-Etsu Handotai Co., Ltd. Method of forming thin film and apparatus therefor
FR2618799B1 (fr) * 1987-07-27 1989-12-29 Inst Nat Rech Chimique Reacteur de depot en phase vapeur
US5169478A (en) * 1987-10-08 1992-12-08 Friendtech Laboratory, Ltd. Apparatus for manufacturing semiconductor devices
US6096998A (en) 1996-09-17 2000-08-01 Micron Technology, Inc. Method and apparatus for performing thermal reflow operations under high gravity conditions
US6440220B1 (en) * 1998-10-23 2002-08-27 Goodrich Corporation Method and apparatus for inhibiting infiltration of a reactive gas into porous refractory insulation
US6594446B2 (en) * 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
CN100416243C (zh) 2001-12-26 2008-09-03 加拿大马特森技术有限公司 测量温度和热处理的方法及系统
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
JP5630935B2 (ja) 2003-12-19 2014-11-26 マトソン テクノロジー、インコーポレイテッド 工作物の熱誘起運動を抑制する機器及び装置
ES2268974B2 (es) * 2005-06-16 2007-12-01 Universidad Politecnica De Madrid Reactor epitaxial para la produccion de obleas a gran escala.
US8454356B2 (en) 2006-11-15 2013-06-04 Mattson Technology, Inc. Systems and methods for supporting a workpiece during heat-treating
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
JP5310512B2 (ja) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 基板処理装置
TW201122148A (en) * 2009-12-24 2011-07-01 Hon Hai Prec Ind Co Ltd Chemical vapor deposition device
US9315895B2 (en) * 2010-05-10 2016-04-19 Mitsubishi Materials Corporation Apparatus for producing polycrystalline silicon
US9029737B2 (en) * 2013-01-04 2015-05-12 Tsmc Solar Ltd. Method and system for forming absorber layer on metal coated glass for photovoltaic devices
JP7230494B2 (ja) * 2018-12-21 2023-03-01 富士フイルムビジネスイノベーション株式会社 膜形成装置、および膜形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL101577C (cs) * 1957-12-31 1900-01-01
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member
US3206331A (en) * 1961-04-25 1965-09-14 Gen Electric Method for coating articles with pyrolitic graphite
DE1137807B (de) * 1961-06-09 1962-10-11 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
US3220380A (en) * 1961-08-21 1965-11-30 Merck & Co Inc Deposition chamber including heater element enveloped by a quartz workholder
US3190771A (en) * 1962-01-11 1965-06-22 Electra Mfg Company Filament for vacuum deposition apparatus and method of making it
US3361591A (en) * 1964-04-15 1968-01-02 Hughes Aircraft Co Production of thin films of cadmium sulfide, cadmium telluride or cadmium selenide

Also Published As

Publication number Publication date
US3460510A (en) 1969-08-12
NL6702889A (cs) 1967-11-13
FR1522791A (fr) 1968-04-26
DE1619956A1 (de) 1970-09-17
DE1619956B2 (de) 1971-08-19
GB1125061A (en) 1968-08-28

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