BE685633A - - Google Patents
Info
- Publication number
- BE685633A BE685633A BE685633DA BE685633A BE 685633 A BE685633 A BE 685633A BE 685633D A BE685633D A BE 685633DA BE 685633 A BE685633 A BE 685633A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB35625/65A GB1137354A (en) | 1965-08-19 | 1965-08-19 | Improvements in and relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
BE685633A true BE685633A (de) | 1967-02-17 |
Family
ID=10379801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE685633D BE685633A (de) | 1965-08-19 | 1966-08-17 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3436625A (de) |
BE (1) | BE685633A (de) |
DE (1) | DE1564431A1 (de) |
FR (1) | FR1489613A (de) |
GB (1) | GB1137354A (de) |
NL (1) | NL6611427A (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3614549A (en) * | 1968-10-15 | 1971-10-19 | Ibm | A semiconductor recombination radiation device |
US3648120A (en) * | 1969-01-16 | 1972-03-07 | Bell Telephone Labor Inc | Indium aluminum phosphide and electroluminescent device using same |
NL153030B (nl) * | 1969-09-05 | 1977-04-15 | Hitachi Ltd | Licht-uitzendende halfgeleiderdiode. |
US3780359A (en) * | 1971-12-20 | 1973-12-18 | Ibm | Bipolar transistor with a heterojunction emitter and a method fabricating the same |
US4033796A (en) * | 1975-06-23 | 1977-07-05 | Xerox Corporation | Method of making buried-heterostructure diode injection laser |
US4206002A (en) * | 1976-10-19 | 1980-06-03 | University Of Pittsburgh | Graded band gap multi-junction solar energy cell |
CA1081835A (en) * | 1976-11-08 | 1980-07-15 | Dieter H. Pommerrenig | Method of producing a semiconductor photodiode of indium antimonide and device thereof |
USRE31968E (en) * | 1980-12-31 | 1985-08-13 | The Boeing Company | Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2 |
US4335266A (en) * | 1980-12-31 | 1982-06-15 | The Boeing Company | Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL125226C (de) * | 1960-05-02 | |||
US3200259A (en) * | 1961-08-01 | 1965-08-10 | Rca Corp | Solid state electrical devices utilizing phonon propagation |
NL295293A (de) * | 1962-07-13 | |||
US3271636A (en) * | 1962-10-23 | 1966-09-06 | Bell Telephone Labor Inc | Gallium arsenide semiconductor diode and method |
-
0
- FR FR1489613D patent/FR1489613A/fr not_active Expired
-
1965
- 1965-08-19 GB GB35625/65A patent/GB1137354A/en not_active Expired
-
1966
- 1966-08-02 US US569644A patent/US3436625A/en not_active Expired - Lifetime
- 1966-08-13 NL NL6611427A patent/NL6611427A/xx unknown
- 1966-08-16 DE DE19661564431 patent/DE1564431A1/de active Pending
- 1966-08-17 BE BE685633D patent/BE685633A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE1564431A1 (de) | 1970-01-22 |
US3436625A (en) | 1969-04-01 |
NL6611427A (de) | 1967-02-20 |
GB1137354A (en) | 1968-12-18 |
FR1489613A (de) | 1967-11-13 |