BE682817A - - Google Patents
Info
- Publication number
- BE682817A BE682817A BE682817DA BE682817A BE 682817 A BE682817 A BE 682817A BE 682817D A BE682817D A BE 682817DA BE 682817 A BE682817 A BE 682817A
- Authority
- BE
- Belgium
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01015—Phosphorus [P]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01018—Argon [Ar]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01021—Scandium [Sc]
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- H01L2924/01023—Vanadium [V]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01042—Molybdenum [Mo]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H01L2924/01051—Antimony [Sb]
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- H01L2924/01058—Cerium [Ce]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/01075—Rhenium [Re]
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- H01L2924/01079—Gold [Au]
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- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H01L2924/01084—Polonium [Po]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
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- H01L2924/014—Solder alloys
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0097721 | 1965-06-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE682817A true BE682817A (ja) | 1966-12-20 |
Family
ID=7520937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE682817D BE682817A (ja) | 1965-06-22 | 1966-06-20 |
Country Status (12)
Country | Link |
---|---|
US (1) | US3858096A (ja) |
AT (1) | AT263941B (ja) |
BE (1) | BE682817A (ja) |
CH (1) | CH449780A (ja) |
DE (1) | DE1514483B2 (ja) |
DK (1) | DK135650B (ja) |
ES (1) | ES328163A1 (ja) |
FR (1) | FR1484261A (ja) |
GB (1) | GB1132748A (ja) |
NL (1) | NL6608661A (ja) |
NO (1) | NO119600B (ja) |
SE (1) | SE316536B (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2014289A1 (de) * | 1970-03-25 | 1971-10-14 | Semikron Gleichrichterbau | Scheibenförmiges Halbleiterbauele ment und Verfahren zu seiner Herstellung |
NL7203094A (ja) * | 1971-03-11 | 1972-09-13 | ||
GB1506735A (en) * | 1975-03-21 | 1978-04-12 | Westinghouse Brake & Signal | Semiconductor devices |
US4127863A (en) * | 1975-10-01 | 1978-11-28 | Tokyo Shibaura Electric Co., Ltd. | Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast |
DE2556469C3 (de) * | 1975-12-15 | 1978-09-07 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterbauelement mit Druckkontakt |
CS182611B1 (en) * | 1976-03-18 | 1978-04-28 | Pavel Reichel | Power semiconducting element |
US4392153A (en) * | 1978-05-01 | 1983-07-05 | General Electric Company | Cooled semiconductor power module including structured strain buffers without dry interfaces |
JPS57130441A (en) * | 1981-02-06 | 1982-08-12 | Hitachi Ltd | Integrated circuit device |
US4769744A (en) * | 1983-08-04 | 1988-09-06 | General Electric Company | Semiconductor chip packages having solder layers of enhanced durability |
JPH0642337Y2 (ja) * | 1984-07-05 | 1994-11-02 | 三菱電機株式会社 | 半導体装置 |
DE59407080D1 (de) * | 1993-08-09 | 1998-11-19 | Siemens Ag | Leistungs-Halbleiterbauelement mit Druckkontakt |
US6727524B2 (en) * | 2002-03-22 | 2004-04-27 | Kulite Semiconductor Products, Inc. | P-n junction structure |
US7534979B2 (en) | 2004-05-14 | 2009-05-19 | Mitsubishi Denki Kabushiki Kaisha | Pressure-contact type rectifier with contact friction reducer |
ATE535018T1 (de) | 2004-12-17 | 2011-12-15 | Siemens Ag | Halbleiterschaltmodul |
DE102008055137A1 (de) * | 2008-12-23 | 2010-07-01 | Robert Bosch Gmbh | Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils |
JP6845444B1 (ja) * | 2019-10-15 | 2021-03-17 | 千住金属工業株式会社 | 接合材、接合材の製造方法及び接合体 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL264799A (ja) * | 1960-06-21 | |||
US3293508A (en) * | 1964-04-21 | 1966-12-20 | Int Rectifier Corp | Compression connected semiconductor device |
US3413532A (en) * | 1965-02-08 | 1968-11-26 | Westinghouse Electric Corp | Compression bonded semiconductor device |
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1965
- 1965-06-22 DE DE19651514483 patent/DE1514483B2/de active Pending
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1966
- 1966-06-09 DK DK295566A patent/DK135650B/da unknown
- 1966-06-13 NO NO66163424A patent/NO119600B/no unknown
- 1966-06-13 CH CH851866A patent/CH449780A/de unknown
- 1966-06-15 AT AT569966A patent/AT263941B/de active
- 1966-06-20 BE BE682817D patent/BE682817A/xx unknown
- 1966-06-20 ES ES0328163A patent/ES328163A1/es not_active Expired
- 1966-06-21 GB GB2776366A patent/GB1132748A/en not_active Expired
- 1966-06-21 SE SE844466A patent/SE316536B/xx unknown
- 1966-06-21 FR FR66362A patent/FR1484261A/fr not_active Expired
- 1966-06-22 NL NL6608661A patent/NL6608661A/xx unknown
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1972
- 1972-08-04 US US00277925A patent/US3858096A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3858096A (en) | 1974-12-31 |
DE1514483B2 (de) | 1971-05-06 |
SE316536B (ja) | 1969-10-27 |
AT263941B (de) | 1968-08-12 |
ES328163A1 (es) | 1967-04-01 |
DK135650B (da) | 1977-05-31 |
FR1484261A (fr) | 1967-06-09 |
NO119600B (ja) | 1970-06-08 |
CH449780A (de) | 1968-01-15 |
GB1132748A (en) | 1968-11-06 |
DK135650C (ja) | 1977-10-31 |
DE1514483A1 (de) | 1970-03-26 |
NL6608661A (ja) | 1966-12-23 |