BE682817A - - Google Patents

Info

Publication number
BE682817A
BE682817A BE682817DA BE682817A BE 682817 A BE682817 A BE 682817A BE 682817D A BE682817D A BE 682817DA BE 682817 A BE682817 A BE 682817A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE682817A publication Critical patent/BE682817A/xx

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Powder Metallurgy (AREA)
BE682817D 1965-06-22 1966-06-20 BE682817A (US20100056889A1-20100304-C00004.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0097721 1965-06-22

Publications (1)

Publication Number Publication Date
BE682817A true BE682817A (US20100056889A1-20100304-C00004.png) 1966-12-20

Family

ID=7520937

Family Applications (1)

Application Number Title Priority Date Filing Date
BE682817D BE682817A (US20100056889A1-20100304-C00004.png) 1965-06-22 1966-06-20

Country Status (12)

Country Link
US (1) US3858096A (US20100056889A1-20100304-C00004.png)
AT (1) AT263941B (US20100056889A1-20100304-C00004.png)
BE (1) BE682817A (US20100056889A1-20100304-C00004.png)
CH (1) CH449780A (US20100056889A1-20100304-C00004.png)
DE (1) DE1514483B2 (US20100056889A1-20100304-C00004.png)
DK (1) DK135650B (US20100056889A1-20100304-C00004.png)
ES (1) ES328163A1 (US20100056889A1-20100304-C00004.png)
FR (1) FR1484261A (US20100056889A1-20100304-C00004.png)
GB (1) GB1132748A (US20100056889A1-20100304-C00004.png)
NL (1) NL6608661A (US20100056889A1-20100304-C00004.png)
NO (1) NO119600B (US20100056889A1-20100304-C00004.png)
SE (1) SE316536B (US20100056889A1-20100304-C00004.png)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2014289A1 (de) * 1970-03-25 1971-10-14 Semikron Gleichrichterbau Scheibenförmiges Halbleiterbauele ment und Verfahren zu seiner Herstellung
NL7203094A (US20100056889A1-20100304-C00004.png) * 1971-03-11 1972-09-13
GB1506735A (en) * 1975-03-21 1978-04-12 Westinghouse Brake & Signal Semiconductor devices
US4127863A (en) * 1975-10-01 1978-11-28 Tokyo Shibaura Electric Co., Ltd. Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast
DE2556469C3 (de) * 1975-12-15 1978-09-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement mit Druckkontakt
CS182611B1 (en) * 1976-03-18 1978-04-28 Pavel Reichel Power semiconducting element
US4392153A (en) * 1978-05-01 1983-07-05 General Electric Company Cooled semiconductor power module including structured strain buffers without dry interfaces
JPS57130441A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Integrated circuit device
US4769744A (en) * 1983-08-04 1988-09-06 General Electric Company Semiconductor chip packages having solder layers of enhanced durability
JPH0642337Y2 (ja) * 1984-07-05 1994-11-02 三菱電機株式会社 半導体装置
DE59407080D1 (de) * 1993-08-09 1998-11-19 Siemens Ag Leistungs-Halbleiterbauelement mit Druckkontakt
US6727524B2 (en) * 2002-03-22 2004-04-27 Kulite Semiconductor Products, Inc. P-n junction structure
JP4215101B2 (ja) 2004-05-14 2009-01-28 三菱電機株式会社 加圧接触式整流装置
US7692293B2 (en) 2004-12-17 2010-04-06 Siemens Aktiengesellschaft Semiconductor switching module
DE102008055137A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
JP6845444B1 (ja) * 2019-10-15 2021-03-17 千住金属工業株式会社 接合材、接合材の製造方法及び接合体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL264799A (US20100056889A1-20100304-C00004.png) * 1960-06-21
US3293508A (en) * 1964-04-21 1966-12-20 Int Rectifier Corp Compression connected semiconductor device
US3413532A (en) * 1965-02-08 1968-11-26 Westinghouse Electric Corp Compression bonded semiconductor device

Also Published As

Publication number Publication date
AT263941B (de) 1968-08-12
US3858096A (en) 1974-12-31
ES328163A1 (es) 1967-04-01
FR1484261A (fr) 1967-06-09
SE316536B (US20100056889A1-20100304-C00004.png) 1969-10-27
NO119600B (US20100056889A1-20100304-C00004.png) 1970-06-08
DK135650B (da) 1977-05-31
NL6608661A (US20100056889A1-20100304-C00004.png) 1966-12-23
DE1514483A1 (de) 1970-03-26
DE1514483B2 (de) 1971-05-06
CH449780A (de) 1968-01-15
GB1132748A (en) 1968-11-06
DK135650C (US20100056889A1-20100304-C00004.png) 1977-10-31

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