BE663477A - - Google Patents
Info
- Publication number
- BE663477A BE663477A BE663477A BE663477A BE663477A BE 663477 A BE663477 A BE 663477A BE 663477 A BE663477 A BE 663477A BE 663477 A BE663477 A BE 663477A BE 663477 A BE663477 A BE 663477A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DED0044333 | 1964-05-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE663477A true BE663477A (xx) | 1965-09-01 |
Family
ID=7048243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE663477A BE663477A (xx) | 1964-05-05 | 1965-05-05 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3358192A (xx) |
| BE (1) | BE663477A (xx) |
| DE (1) | DE1464880B2 (xx) |
| FR (1) | FR1432260A (xx) |
| GB (1) | GB1083154A (xx) |
| NL (1) | NL6505614A (xx) |
| SE (1) | SE325642B (xx) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL32745A (en) * | 1968-08-22 | 1973-06-29 | Energy Conversion Devices Inc | Method and apparatus for producing,storing and retrieving information |
| US3614557A (en) * | 1969-05-16 | 1971-10-19 | Nasa | Shielded-cathode mode bulk effect devices |
| US3748501A (en) * | 1971-04-30 | 1973-07-24 | Energy Conversion Devices Inc | Multi-terminal amorphous electronic control device |
| US4050082A (en) | 1973-11-13 | 1977-09-20 | Innotech Corporation | Glass switching device using an ion impermeable glass active layer |
| US3962715A (en) * | 1974-12-03 | 1976-06-08 | Yeshiva University | High-speed, high-current spike suppressor and method for fabricating same |
| DE10221657A1 (de) * | 2002-05-15 | 2003-11-27 | Infineon Technologies Ag | Informationsmatrix |
| TWI233204B (en) * | 2002-07-26 | 2005-05-21 | Infineon Technologies Ag | Nonvolatile memory element and associated production methods and memory element arrangements |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2994121A (en) * | 1958-11-21 | 1961-08-01 | Shockley William | Method of making a semiconductive switching array |
| NL282170A (xx) * | 1961-08-17 | |||
| DE1252819B (de) * | 1961-11-06 | 1967-10-26 | Western Electric Company Incorporated, New York, N. Y. (V. St. A.) | Elektronisches Festkörperbauelement |
| US3254276A (en) * | 1961-11-29 | 1966-05-31 | Philco Corp | Solid-state translating device with barrier-layers formed by thin metal and semiconductor material |
-
1964
- 1964-05-05 DE DE19641464880 patent/DE1464880B2/de active Pending
-
1965
- 1965-04-23 GB GB17254/65A patent/GB1083154A/en not_active Expired
- 1965-04-29 SE SE05675/65A patent/SE325642B/xx unknown
- 1965-05-03 NL NL6505614A patent/NL6505614A/xx unknown
- 1965-05-04 US US453157A patent/US3358192A/en not_active Expired - Lifetime
- 1965-05-04 FR FR15670A patent/FR1432260A/fr not_active Expired
- 1965-05-05 BE BE663477A patent/BE663477A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1083154A (en) | 1967-09-13 |
| DE1464880A1 (de) | 1968-12-05 |
| FR1432260A (fr) | 1966-03-18 |
| NL6505614A (xx) | 1965-11-08 |
| DE1464880B2 (de) | 1970-11-12 |
| US3358192A (en) | 1967-12-12 |
| SE325642B (xx) | 1970-07-06 |