BE630321A - - Google Patents

Info

Publication number
BE630321A
BE630321A BE630321DA BE630321A BE 630321 A BE630321 A BE 630321A BE 630321D A BE630321D A BE 630321DA BE 630321 A BE630321 A BE 630321A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE630321A publication Critical patent/BE630321A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/06Hydrogen phosphides
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/007Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/065Gp III-V generic compounds-processing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/072Heterojunctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/079Inert carrier gas

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Luminescent Compositions (AREA)
  • Catalysts (AREA)
BE630321D 1962-03-29 BE630321A (US06262066-20010717-C00638.png)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES78719A DE1191794B (de) 1962-03-29 1962-03-29 Verfahren zur Herstellung gereinigter Borphosphideinkristalle
DE1962S0082828 DE1265716C2 (de) 1962-03-29 1962-12-12 Verfahren zum Herstellen von AB-Verbindungen in kristalline Form

Publications (1)

Publication Number Publication Date
BE630321A true BE630321A (US06262066-20010717-C00638.png)

Family

ID=25996821

Family Applications (2)

Application Number Title Priority Date Filing Date
BE630321D BE630321A (US06262066-20010717-C00638.png) 1962-03-29
BE641093A BE641093A (US06262066-20010717-C00638.png) 1962-03-29 1963-12-11

Family Applications After (1)

Application Number Title Priority Date Filing Date
BE641093A BE641093A (US06262066-20010717-C00638.png) 1962-03-29 1963-12-11

Country Status (7)

Country Link
US (2) US3340009A (US06262066-20010717-C00638.png)
BE (2) BE641093A (US06262066-20010717-C00638.png)
CH (2) CH477365A (US06262066-20010717-C00638.png)
DE (2) DE1191794B (US06262066-20010717-C00638.png)
GB (2) GB1032604A (US06262066-20010717-C00638.png)
NL (2) NL297600A (US06262066-20010717-C00638.png)
SE (1) SE326163B (US06262066-20010717-C00638.png)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL286890A (US06262066-20010717-C00638.png) * 1962-03-29
JPS4820106B1 (US06262066-20010717-C00638.png) * 1968-03-08 1973-06-19
JPS557946B2 (US06262066-20010717-C00638.png) * 1972-04-19 1980-02-29
US4093704A (en) * 1974-01-16 1978-06-06 U.S. Philips Corporation Method for synthesis of III-V compounds
US4550014A (en) * 1982-09-09 1985-10-29 The United States Of America As Represented By The United States Department Of Energy Method for production of free-standing polycrystalline boron phosphide film
US4559217A (en) * 1983-11-01 1985-12-17 The United States Of America As Represented By The Secretary Of The Air Force Method for vacuum baking indium in-situ
US4783320A (en) * 1985-11-25 1988-11-08 The United States Of America As Represented By The Secretary Of The Air Force Rapid synthesis of indium phosphide
US4946543A (en) * 1986-06-02 1990-08-07 Kalisher Murray H Method and apparatus for growing films on a substrate
CN107868981B (zh) * 2016-09-28 2020-09-29 清华大学 一种金属铂的半金属化合物及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2862787A (en) * 1953-05-27 1958-12-02 Paul F Seguin Process and apparatus for the preparation of semi-conductors from arsenides and phosphides and detectors formed therefrom
DE1029803B (de) * 1954-09-18 1958-05-14 Siemens Ag Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System
US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds
US2871100A (en) * 1955-07-22 1959-01-27 Rca Corp Method of preparing indium phosphide
US3021196A (en) * 1955-09-23 1962-02-13 Siemens Ag Method for producing multi-component substances comprising a component of high volatility
US2937075A (en) * 1956-06-08 1960-05-17 Rca Corp Method of preparing pure indium phosphide
US2921905A (en) * 1956-08-08 1960-01-19 Westinghouse Electric Corp Method of preparing material for semiconductor applications
US2966424A (en) * 1958-03-03 1960-12-27 Monsanto Chemicals Crystallization of boron phosphide
GB923860A (en) * 1958-12-11 1963-04-18 Monsanto Chemicals Crystalline boron phosphides and production thereof
US3019092A (en) * 1958-12-19 1962-01-30 Rca Corp Method for purifying materials
NL252911A (US06262066-20010717-C00638.png) * 1959-06-22
NL253175A (US06262066-20010717-C00638.png) * 1959-06-29
NL258863A (US06262066-20010717-C00638.png) * 1959-12-11
NL275516A (US06262066-20010717-C00638.png) * 1961-03-02
NL286890A (US06262066-20010717-C00638.png) * 1962-03-29

Also Published As

Publication number Publication date
US3340009A (en) 1967-09-05
GB1063084A (en) 1967-03-30
DE1265716C2 (de) 1968-11-14
DE1265716B (de) 1968-04-11
NL297600A (US06262066-20010717-C00638.png)
SE326163B (US06262066-20010717-C00638.png) 1970-07-20
US3269878A (en) 1966-08-30
CH477365A (de) 1969-08-31
GB1032604A (en) 1966-06-15
BE641093A (US06262066-20010717-C00638.png) 1964-06-11
CH449590A (de) 1968-01-15
NL286890A (US06262066-20010717-C00638.png)
DE1191794B (de) 1965-04-29

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