BE623187A - - Google Patents
Info
- Publication number
- BE623187A BE623187A BE623187DA BE623187A BE 623187 A BE623187 A BE 623187A BE 623187D A BE623187D A BE 623187DA BE 623187 A BE623187 A BE 623187A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US143354A US3210563A (en) | 1961-10-06 | 1961-10-06 | Four-layer semiconductor switch with particular configuration exhibiting relatively high turn-off gain |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE623187A true BE623187A (pt) |
Family
ID=22503701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE623187D BE623187A (pt) | 1961-10-06 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3210563A (pt) |
| BE (1) | BE623187A (pt) |
| CH (1) | CH394402A (pt) |
| DE (1) | DE1211339B (pt) |
| GB (1) | GB983266A (pt) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL290680A (pt) * | 1962-06-19 | |||
| US3271587A (en) * | 1962-11-13 | 1966-09-06 | Texas Instruments Inc | Four-terminal semiconductor switch circuit |
| FR1400724A (fr) * | 1963-06-04 | 1965-05-28 | Gen Electric | Perfectionnements aux dispositifs semiconducteurs de commutation et à leur procédé de fabrication |
| US3331000A (en) * | 1963-10-18 | 1967-07-11 | Gen Electric | Gate turn off semiconductor switch having a composite gate region with different impurity concentrations |
| US3356862A (en) * | 1964-12-02 | 1967-12-05 | Int Rectifier Corp | High speed controlled rectifier |
| US3465214A (en) * | 1967-03-23 | 1969-09-02 | Mallory & Co Inc P R | High-current integrated-circuit power transistor |
| US3577042A (en) * | 1967-06-19 | 1971-05-04 | Int Rectifier Corp | Gate connection for controlled rectifiers |
| SE318654B (pt) * | 1967-06-30 | 1969-12-15 | Asea Ab | |
| US3628106A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with protective peripheral junction portion |
| US4364073A (en) * | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
| US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2877359A (en) * | 1956-04-20 | 1959-03-10 | Bell Telephone Labor Inc | Semiconductor signal storage device |
| US2998534A (en) * | 1958-09-04 | 1961-08-29 | Clevite Corp | Symmetrical junction transistor device and circuit |
| US2980832A (en) * | 1959-06-10 | 1961-04-18 | Westinghouse Electric Corp | High current npnp switch |
| US3040270A (en) * | 1959-09-01 | 1962-06-19 | Gen Electric | Silicon controlled rectifier circuit including a variable frequency oscillator |
| FR1267417A (fr) * | 1959-09-08 | 1961-07-21 | Thomson Houston Comp Francaise | Dispositif à semi-conducteur et méthode de fabrication |
| DE1103389B (de) * | 1959-10-14 | 1961-03-30 | Siemens Ag | Schaltanordnung mit einer Vierschichthalbleiteranordnung |
| DE1107710B (de) * | 1959-11-18 | 1961-05-31 | Siemens Ag | Schaltanordnung mit einer Vierschicht-halbleiteranordnung |
| NL129185C (pt) * | 1960-06-10 |
-
0
- BE BE623187D patent/BE623187A/xx unknown
-
1961
- 1961-10-06 US US143354A patent/US3210563A/en not_active Expired - Lifetime
-
1962
- 1962-09-01 DE DEW32884A patent/DE1211339B/de active Pending
- 1962-09-27 CH CH1138962A patent/CH394402A/de unknown
- 1962-09-27 GB GB36658/62A patent/GB983266A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB983266A (en) | 1965-02-17 |
| US3210563A (en) | 1965-10-05 |
| DE1211339B (de) | 1966-02-24 |
| CH394402A (de) | 1965-06-30 |