BE607571A - - Google Patents

Info

Publication number
BE607571A
BE607571A BE607571DA BE607571A BE 607571 A BE607571 A BE 607571A BE 607571D A BE607571D A BE 607571DA BE 607571 A BE607571 A BE 607571A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE607571A publication Critical patent/BE607571A/xx

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/052—Face to face deposition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
BE607571D 1960-09-09 BE607571A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54872A US3099579A (en) 1960-09-09 1960-09-09 Growing and determining epitaxial layer thickness

Publications (1)

Publication Number Publication Date
BE607571A true BE607571A (zh)

Family

ID=21994045

Family Applications (1)

Application Number Title Priority Date Filing Date
BE607571D BE607571A (zh) 1960-09-09

Country Status (5)

Country Link
US (1) US3099579A (zh)
BE (1) BE607571A (zh)
GB (1) GB997219A (zh)
NL (1) NL268241A (zh)
SE (1) SE305963B (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3233174A (en) * 1960-12-06 1966-02-01 Merck & Co Inc Method of determining the concentration of active impurities present in a gaseous decomposable semiconductor compound
US3220896A (en) * 1961-07-17 1965-11-30 Raytheon Co Transistor
NL283619A (zh) * 1961-10-06
BE632105A (zh) * 1962-05-09
US3447977A (en) * 1962-08-23 1969-06-03 Siemens Ag Method of producing semiconductor members
NL296876A (zh) * 1962-08-23
US3316130A (en) * 1963-05-07 1967-04-25 Gen Electric Epitaxial growth of semiconductor devices
US3326178A (en) * 1963-09-12 1967-06-20 Angelis Henry M De Vapor deposition means to produce a radioactive source
US3322979A (en) * 1964-03-31 1967-05-30 Texas Instruments Inc Thermionic energy converter
US3407783A (en) * 1964-08-31 1968-10-29 Emil R. Capita Vapor deposition apparatus
DE1262244B (de) * 1964-12-23 1968-03-07 Siemens Ag Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial
US3351757A (en) * 1965-02-18 1967-11-07 Bell Telephone Labor Inc Method of testing the internal friction of synthetic quartz crystal by the use of two different frequencies of infrared
US3338761A (en) * 1965-03-31 1967-08-29 Texas Instruments Inc Method and apparatus for making compound materials
US3473977A (en) * 1967-02-02 1969-10-21 Westinghouse Electric Corp Semiconductor fabrication technique permitting examination of epitaxially grown layers
US3399651A (en) * 1967-05-26 1968-09-03 Philco Ford Corp Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon
US3465150A (en) * 1967-06-15 1969-09-02 Frances Hugle Method of aligning semiconductors
US3601492A (en) * 1967-11-20 1971-08-24 Monsanto Co Apparatus for measuring film thickness
US3620814A (en) * 1968-08-09 1971-11-16 Bell Telephone Labor Inc Continuous measurement of the thickness of hot thin films
US4020791A (en) * 1969-06-30 1977-05-03 Siemens Aktiengesellschaft Apparatus for indiffusing dopants into semiconductor material
US3868924A (en) * 1969-06-30 1975-03-04 Siemens Ag Apparatus for indiffusing dopants into semiconductor material
US4203799A (en) * 1975-05-30 1980-05-20 Hitachi, Ltd. Method for monitoring thickness of epitaxial growth layer on substrate
NL7605234A (nl) * 1976-05-17 1977-11-21 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
NL7710164A (nl) * 1977-09-16 1979-03-20 Philips Nv Werkwijze ter behandeling van een eenkristal- lijn lichaam.
JP5444823B2 (ja) * 2009-05-01 2014-03-19 信越半導体株式会社 Ｓｏｉウェーハの検査方法
CN102005401A (zh) * 2010-09-10 2011-04-06 上海宏力半导体制造有限公司 外延薄膜厚度测量方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2726173A (en) * 1953-04-03 1955-12-06 Itt Method and apparatus for measuring film thickness
US2898248A (en) * 1957-05-15 1959-08-04 Ibm Method of fabricating germanium bodies

Also Published As

Publication number Publication date
US3099579A (en) 1963-07-30
GB997219A (en) 1965-07-07
SE305963B (zh) 1968-11-11
NL268241A (zh)

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