BE607571A - - Google Patents
Info
- Publication number
- BE607571A BE607571A BE607571DA BE607571A BE 607571 A BE607571 A BE 607571A BE 607571D A BE607571D A BE 607571DA BE 607571 A BE607571 A BE 607571A
- Authority
- BE
- Belgium
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S118/00—Coating apparatus
- Y10S118/90—Semiconductor vapor doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/052—Face to face deposition
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54872A US3099579A (en) | 1960-09-09 | 1960-09-09 | Growing and determining epitaxial layer thickness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE607571A true BE607571A (no) |
Family
ID=21994045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE607571D BE607571A (no) | 1960-09-09 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3099579A (no) |
| BE (1) | BE607571A (no) |
| GB (1) | GB997219A (no) |
| NL (1) | NL268241A (no) |
| SE (1) | SE305963B (no) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3233174A (en) * | 1960-12-06 | 1966-02-01 | Merck & Co Inc | Method of determining the concentration of active impurities present in a gaseous decomposable semiconductor compound |
| US3220896A (en) * | 1961-07-17 | 1965-11-30 | Raytheon Co | Transistor |
| NL283619A (no) * | 1961-10-06 | |||
| BE632105A (no) * | 1962-05-09 | |||
| NL296876A (no) * | 1962-08-23 | |||
| US3447977A (en) * | 1962-08-23 | 1969-06-03 | Siemens Ag | Method of producing semiconductor members |
| US3316130A (en) * | 1963-05-07 | 1967-04-25 | Gen Electric | Epitaxial growth of semiconductor devices |
| US3326178A (en) * | 1963-09-12 | 1967-06-20 | Angelis Henry M De | Vapor deposition means to produce a radioactive source |
| US3322979A (en) * | 1964-03-31 | 1967-05-30 | Texas Instruments Inc | Thermionic energy converter |
| US3407783A (en) * | 1964-08-31 | 1968-10-29 | Emil R. Capita | Vapor deposition apparatus |
| DE1262244B (de) * | 1964-12-23 | 1968-03-07 | Siemens Ag | Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial |
| US3351757A (en) * | 1965-02-18 | 1967-11-07 | Bell Telephone Labor Inc | Method of testing the internal friction of synthetic quartz crystal by the use of two different frequencies of infrared |
| US3338761A (en) * | 1965-03-31 | 1967-08-29 | Texas Instruments Inc | Method and apparatus for making compound materials |
| US3473977A (en) * | 1967-02-02 | 1969-10-21 | Westinghouse Electric Corp | Semiconductor fabrication technique permitting examination of epitaxially grown layers |
| US3399651A (en) * | 1967-05-26 | 1968-09-03 | Philco Ford Corp | Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon |
| US3465150A (en) * | 1967-06-15 | 1969-09-02 | Frances Hugle | Method of aligning semiconductors |
| US3601492A (en) * | 1967-11-20 | 1971-08-24 | Monsanto Co | Apparatus for measuring film thickness |
| US3620814A (en) * | 1968-08-09 | 1971-11-16 | Bell Telephone Labor Inc | Continuous measurement of the thickness of hot thin films |
| US4020791A (en) * | 1969-06-30 | 1977-05-03 | Siemens Aktiengesellschaft | Apparatus for indiffusing dopants into semiconductor material |
| US3868924A (en) * | 1969-06-30 | 1975-03-04 | Siemens Ag | Apparatus for indiffusing dopants into semiconductor material |
| US4203799A (en) * | 1975-05-30 | 1980-05-20 | Hitachi, Ltd. | Method for monitoring thickness of epitaxial growth layer on substrate |
| NL7605234A (nl) * | 1976-05-17 | 1977-11-21 | Philips Nv | Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze. |
| NL7710164A (nl) * | 1977-09-16 | 1979-03-20 | Philips Nv | Werkwijze ter behandeling van een eenkristal- lijn lichaam. |
| JP5444823B2 (ja) * | 2009-05-01 | 2014-03-19 | 信越半導体株式会社 | Ｓｏｉウェーハの検査方法 |
| CN102005401A (zh) * | 2010-09-10 | 2011-04-06 | 上海宏力半导体制造有限公司 | 外延薄膜厚度测量方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2726173A (en) * | 1953-04-03 | 1955-12-06 | Itt | Method and apparatus for measuring film thickness |
| US2898248A (en) * | 1957-05-15 | 1959-08-04 | Ibm | Method of fabricating germanium bodies |
-
0
- NL NL268241D patent/NL268241A/xx unknown
- BE BE607571D patent/BE607571A/xx unknown
-
1960
- 1960-09-09 US US54872A patent/US3099579A/en not_active Expired - Lifetime
-
1961
- 1961-09-05 GB GB31853/61A patent/GB997219A/en not_active Expired
- 1961-09-08 SE SE8987/61A patent/SE305963B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3099579A (en) | 1963-07-30 |
| NL268241A (no) | |
| SE305963B (no) | 1968-11-11 |
| GB997219A (en) | 1965-07-07 |