BE596820A - Procédé de fabrication d'une jonction pn fortement dotée unilatéralement. - Google Patents

Procédé de fabrication d'une jonction pn fortement dotée unilatéralement.

Info

Publication number
BE596820A
BE596820A BE596820A BE596820A BE596820A BE 596820 A BE596820 A BE 596820A BE 596820 A BE596820 A BE 596820A BE 596820 A BE596820 A BE 596820A BE 596820 A BE596820 A BE 596820A
Authority
BE
Belgium
Prior art keywords
unilaterally
endowed
strongly
junction
manufacturing
Prior art date
Application number
BE596820A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE596820A publication Critical patent/BE596820A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
BE596820A 1959-11-13 1960-11-07 Procédé de fabrication d'une jonction pn fortement dotée unilatéralement. BE596820A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0065818 1959-11-13

Publications (1)

Publication Number Publication Date
BE596820A true BE596820A (fr) 1961-03-01

Family

ID=7498329

Family Applications (1)

Application Number Title Priority Date Filing Date
BE596820A BE596820A (fr) 1959-11-13 1960-11-07 Procédé de fabrication d'une jonction pn fortement dotée unilatéralement.

Country Status (4)

Country Link
BE (1) BE596820A (fr)
CH (1) CH427037A (fr)
GB (1) GB917727A (fr)
NL (2) NL138893B (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390024A (en) * 1965-03-11 1968-06-25 Texas Instruments Inc Flux for fusing tin to gallium arsenide and method of making and using same

Also Published As

Publication number Publication date
NL255823A (fr)
CH427037A (de) 1966-12-31
NL138893B (nl) 1973-05-15
GB917727A (en) 1963-02-06

Similar Documents

Publication Publication Date Title
BE600139A (fr) Procédé de fabrication d'un agencement semi-conducteur.
FR1233186A (fr) Procédé de fabrication de semi-conducteurs
BE613017A (fr) Procédé de fabrication d'un poussoir
OA01352A (fr) Procédé de fabrication de fermetures à glissière.
BE596820A (fr) Procédé de fabrication d'une jonction pn fortement dotée unilatéralement.
BE582101A (fr) Procédé de fabrication d'une 2.6.dicétopipérazine.
FR75631E (fr) Procédé de fabrication de l'alpha-tocophéryl-quinone
BE583120A (fr) Procédé de fabrication d'un semi-conducteur à base de silicium.
FR1458903A (fr) Procédé de fabrication d'une 2.6-dicétopipérazine
FR79504E (fr) Procédé de fabrication de borazoles
FR1447116A (fr) Procédé de fabrication d'isobutyrophénone
FR1222108A (fr) Fabrication de semi-conducteurs
FR1241728A (fr) Procédé de fabrication de bicyclo-(1, 2, 2)-hepténo-5-dioxepanes
FR1252421A (fr) Procédé de fabrication de jonctions p-n
BE582401A (fr) Procédé de fabrication de l'ouatine.
FR1225515A (fr) Procédé de fabrication de l'éthylène
BE576703A (fr) Procédé de fabrication de l'aniline.
FR1229725A (fr) Procédé de fabrication d'acylsulfanilylguanidines
FR1218269A (fr) Procédé de fabrication d'acétyl-pyridines
FR1221342A (fr) Procédé de fabrication d'alpha-glycols
FR1195187A (fr) Procédé de fabrication d'explosifs
CH410384A (fr) Procédé de fabrication d'un stratifié
FR1314860A (fr) Procédé de fabrication d'une cosse
FR1330436A (fr) Procédé de fabrication d'un semi-conducteur
FR1247101A (fr) Procédé de fabrication d'hexaéthylbenzène