BE572917A - - Google Patents

Info

Publication number
BE572917A
BE572917A BE572917DA BE572917A BE 572917 A BE572917 A BE 572917A BE 572917D A BE572917D A BE 572917DA BE 572917 A BE572917 A BE 572917A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE572917A publication Critical patent/BE572917A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies
BE572917D 1957-11-14 BE572917A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB35471/57A GB847681A (en) 1957-11-14 1957-11-14 Improvements in or relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
BE572917A true BE572917A (https=)

Family

ID=10378096

Family Applications (1)

Application Number Title Priority Date Filing Date
BE572917D BE572917A (https=) 1957-11-14

Country Status (5)

Country Link
US (1) US2985807A (https=)
BE (1) BE572917A (https=)
DE (1) DE1127483B (https=)
GB (1) GB847681A (https=)
NL (1) NL233208A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208412B (de) * 1959-11-13 1966-01-05 Siemens Ag Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1722795U (https=) * 1900-01-01
US2583009A (en) * 1948-09-16 1952-01-22 Bell Telephone Labor Inc Asymmetric electrical conducting device
DE906955C (de) * 1952-03-28 1954-02-04 Licentia Gmbh Verfahren zur Erzeugung groesserer zusammenhaengender defektleitender Bereiche in den Aussenschichten von ueberschussleitenden Germaniumkristallen
US2767287A (en) * 1952-12-31 1956-10-16 Sprague Electric Co Electrode for crystalline negative resistance elements
US2840770A (en) * 1955-03-14 1958-06-24 Texas Instruments Inc Semiconductor device and method of manufacture
DE1765071U (de) * 1957-07-23 1958-04-17 Telefunken Gmbh Zuleitung zu einer legierungsstelle einer kristallode des legierungstyps.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208412B (de) * 1959-11-13 1966-01-05 Siemens Ag Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements

Also Published As

Publication number Publication date
DE1127483B (de) 1962-04-12
GB847681A (en) 1960-09-14
US2985807A (en) 1961-05-23
NL233208A (https=)

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