BE562932A - - Google Patents

Info

Publication number
BE562932A
BE562932A BE562932DA BE562932A BE 562932 A BE562932 A BE 562932A BE 562932D A BE562932D A BE 562932DA BE 562932 A BE562932 A BE 562932A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE562932A publication Critical patent/BE562932A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/21Temperature-sensitive devices
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02Zone-melting with a solvent, e.g. travelling solvent process
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32Mechanisms for moving either the charge or the heater
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • C30B15/18Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Manufacture And Refinement Of Metals (AREA)
BE562932D 1957-01-23 BE562932A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US635893A US3086857A (en) 1957-01-23 1957-01-23 Method of controlling liquid-solid interfaces by peltier heat

Publications (1)

Publication Number Publication Date
BE562932A true BE562932A (pt)

Family

ID=24549548

Family Applications (1)

Application Number Title Priority Date Filing Date
BE562932D BE562932A (pt) 1957-01-23

Country Status (4)

Country Link
US (1) US3086857A (pt)
BE (1) BE562932A (pt)
FR (1) FR1188057A (pt)
GB (1) GB843800A (pt)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3234008A (en) * 1962-05-04 1966-02-08 Arthur F Johnson Aluminum production
GB1034503A (en) * 1963-05-14 1966-06-29 Nat Res Dev Improvements in or relating to the production of crystalline material
US3389987A (en) * 1965-06-14 1968-06-25 Akad Wissenschaften Ddr Process for the purification of materials in single crystal production
US3899304A (en) * 1972-07-17 1975-08-12 Allied Chem Process of growing crystals
US4012242A (en) * 1973-11-14 1977-03-15 International Rectifier Corporation Liquid epitaxy technique
FR2358021A1 (fr) * 1976-07-09 1978-02-03 Radiotechnique Compelec Procede de depot epitaxique d'un semi-conducteur par polarisation electrique d'une phase liquide
US4186045A (en) * 1976-08-26 1980-01-29 Massachusetts Institute Of Technology Method of epitaxial growth employing electromigration
JPS5697897A (en) * 1980-01-07 1981-08-06 Hitachi Ltd Control rod
US4620897A (en) * 1983-09-19 1986-11-04 Fujitsu Limited Method for growing multicomponent compound semiconductor crystals
JP5007596B2 (ja) * 2007-04-03 2012-08-22 信越半導体株式会社 単結晶の成長方法および単結晶の引き上げ装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2743199A (en) * 1955-03-30 1956-04-24 Westinghouse Electric Corp Process of zone refining an elongated body of metal

Also Published As

Publication number Publication date
US3086857A (en) 1963-04-23
FR1188057A (fr) 1959-09-18
GB843800A (en) 1960-08-10

Similar Documents

Publication Publication Date Title
BE567191A (pt)
AT213752B (pt)
BE567202A (pt)
BE573063A (pt)
BE571716A (pt)
BE562684A (pt)
BE568381A (pt)
BE568135A (pt)
BE567824A (pt)
BE567634A (pt)
BE566668A (pt)
BE566239A (pt)
BE564823A (pt)
BE558662A (pt)
BE570153A (pt)
BE567902A (pt)
BE567901A (pt)
BE567816A (pt)
BE567704A (pt)
BE567590A (pt)
BE567514A (pt)
BE567464A (pt)
BE567409A (pt)
BE567372A (pt)
BE562932A (pt)