BE555459A - - Google Patents

Info

Publication number
BE555459A
BE555459A BE555459DA BE555459A BE 555459 A BE555459 A BE 555459A BE 555459D A BE555459D A BE 555459DA BE 555459 A BE555459 A BE 555459A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE555459A publication Critical patent/BE555459A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE555459D 1956-03-02 BE555459A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US358866XA 1956-03-02 1956-03-02

Publications (1)

Publication Number Publication Date
BE555459A true BE555459A (de)

Family

ID=21885372

Family Applications (1)

Application Number Title Priority Date Filing Date
BE555459D BE555459A (de) 1956-03-02

Country Status (4)

Country Link
BE (1) BE555459A (de)
CH (1) CH358866A (de)
FR (1) FR1172813A (de)
GB (1) GB846720A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084078A (en) * 1959-12-02 1963-04-02 Texas Instruments Inc High frequency germanium transistor
US3154450A (en) * 1960-01-27 1964-10-27 Bendix Corp Method of making mesas for diodes by etching
US3181097A (en) * 1960-09-19 1965-04-27 Sprague Electric Co Single crystal semiconductor resistors
US3183129A (en) * 1960-10-14 1965-05-11 Fairchild Camera Instr Co Method of forming a semiconductor
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor
US3533862A (en) * 1967-08-21 1970-10-13 Texas Instruments Inc Method of forming semiconductor regions in an epitaxial layer
US6313398B1 (en) * 1999-06-24 2001-11-06 Shin-Etsu Chemical Co., Ltd. Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same

Also Published As

Publication number Publication date
CH358866A (de) 1961-12-15
FR1172813A (fr) 1959-02-16
GB846720A (en) 1960-08-31

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