BE554007A - - Google Patents
Info
- Publication number
- BE554007A BE554007A BE554007DA BE554007A BE 554007 A BE554007 A BE 554007A BE 554007D A BE554007D A BE 554007DA BE 554007 A BE554007 A BE 554007A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Emergency Protection Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US564024A US2876436A (en) | 1956-02-07 | 1956-02-07 | Electrical circuits employing ferroelectric capacitors |
Publications (1)
Publication Number | Publication Date |
---|---|
BE554007A true BE554007A (sl) |
Family
ID=24252867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE554007D BE554007A (sl) | 1956-02-07 |
Country Status (7)
Country | Link |
---|---|
US (1) | US2876436A (sl) |
BE (1) | BE554007A (sl) |
CH (1) | CH352003A (sl) |
DE (1) | DE1026791B (sl) |
FR (1) | FR1165176A (sl) |
GB (1) | GB812620A (sl) |
NL (1) | NL214049A (sl) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3126509A (en) * | 1956-07-27 | 1964-03-24 | Electrical condenser having two electrically | |
US3256481A (en) * | 1960-03-21 | 1966-06-14 | Charles F Pulvari | Means for sensing electrostatic fields |
US3296520A (en) * | 1961-10-26 | 1967-01-03 | William F Griffith | Electrically controlled variable resistance |
US3343127A (en) * | 1963-05-14 | 1967-09-19 | Bell Telephone Labor Inc | Stored charge diode matrix selection arrangement |
JPS59216177A (ja) * | 1983-05-25 | 1984-12-06 | 株式会社日立製作所 | 情報保持装置 |
JPS60175077A (ja) * | 1984-02-22 | 1985-09-09 | 株式会社日立製作所 | 情報保持装置 |
EP0293798B2 (en) | 1987-06-02 | 1998-12-30 | National Semiconductor Corporation | Non-volatile memory ciruit using ferroelectric capacitor storage element |
US5434811A (en) * | 1987-11-19 | 1995-07-18 | National Semiconductor Corporation | Non-destructive read ferroelectric based memory circuit |
US5063539A (en) * | 1988-10-31 | 1991-11-05 | Raytheon Company | Ferroelectric memory with diode isolation |
US5926412A (en) * | 1992-02-09 | 1999-07-20 | Raytheon Company | Ferroelectric memory structure |
US6373743B1 (en) | 1999-08-30 | 2002-04-16 | Symetrix Corporation | Ferroelectric memory and method of operating same |
US6441414B1 (en) | 1998-10-13 | 2002-08-27 | Symetrix Corporation | Ferroelectric field effect transistor, memory utilizing same, and method of operating same |
US5995407A (en) * | 1998-10-13 | 1999-11-30 | Celis Semiconductor Corporation | Self-referencing ferroelectric memory |
US6339238B1 (en) | 1998-10-13 | 2002-01-15 | Symetrix Corporation | Ferroelectric field effect transistor, memory utilizing same, and method of operating same |
US6031754A (en) * | 1998-11-02 | 2000-02-29 | Celis Semiconductor Corporation | Ferroelectric memory with increased switching voltage |
US6255121B1 (en) | 1999-02-26 | 2001-07-03 | Symetrix Corporation | Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor |
US6236076B1 (en) | 1999-04-29 | 2001-05-22 | Symetrix Corporation | Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material |
US6201731B1 (en) | 1999-05-28 | 2001-03-13 | Celis Semiconductor Corporation | Electronic memory with disturb prevention function |
US6147895A (en) * | 1999-06-04 | 2000-11-14 | Celis Semiconductor Corporation | Ferroelectric memory with two ferroelectric capacitors in memory cell and method of operating same |
US6370056B1 (en) | 2000-03-10 | 2002-04-09 | Symetrix Corporation | Ferroelectric memory and method of operating same |
US20050094457A1 (en) * | 1999-06-10 | 2005-05-05 | Symetrix Corporation | Ferroelectric memory and method of operating same |
US6819602B2 (en) * | 2002-05-10 | 2004-11-16 | Samsung Electronics Co., Ltd. | Multimode data buffer and method for controlling propagation delay time |
US7154768B2 (en) | 2004-02-18 | 2006-12-26 | Symetrix Corporation | Non-destructive readout of ferroelectric memories |
JP4088975B2 (ja) * | 2004-07-14 | 2008-05-21 | セイコーエプソン株式会社 | 強誘電体メモリ装置及び電子機器 |
JP4061597B2 (ja) * | 2004-07-14 | 2008-03-19 | セイコーエプソン株式会社 | 強誘電体メモリ装置及び電子機器 |
US20070190670A1 (en) * | 2006-02-10 | 2007-08-16 | Forest Carl A | Method of making ferroelectric and dielectric layered superlattice materials and memories utilizing same |
US7551476B2 (en) * | 2006-10-02 | 2009-06-23 | Qimonda North America Corp. | Resistive memory having shunted memory cells |
JP2010118128A (ja) * | 2008-11-14 | 2010-05-27 | Toshiba Corp | 強誘電体メモリ |
JP6583526B2 (ja) * | 2016-02-22 | 2019-10-02 | 株式会社村田製作所 | 圧電デバイス |
US10446232B2 (en) | 2017-12-19 | 2019-10-15 | Micron Technology, Inc. | Charge separation for memory sensing |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2691155A (en) * | 1953-02-20 | 1954-10-05 | Rca Corp | Memory system |
US2666195A (en) * | 1952-12-18 | 1954-01-12 | Bell Telephone Labor Inc | Sequential circuits |
NL94472C (sl) * | 1953-05-29 | |||
US2724103A (en) * | 1953-12-31 | 1955-11-15 | Bell Telephone Labor Inc | Electrical circuits employing magnetic core memory elements |
-
0
- BE BE554007D patent/BE554007A/xx unknown
- NL NL214049D patent/NL214049A/xx unknown
-
1956
- 1956-02-07 US US564024A patent/US2876436A/en not_active Expired - Lifetime
- 1956-11-19 GB GB35281/56A patent/GB812620A/en not_active Expired
- 1956-12-04 FR FR1165176D patent/FR1165176A/fr not_active Expired
- 1956-12-24 DE DEW20330A patent/DE1026791B/de active Pending
-
1957
- 1957-01-25 CH CH352003D patent/CH352003A/de unknown
Also Published As
Publication number | Publication date |
---|---|
NL214049A (sl) | |
GB812620A (en) | 1959-04-29 |
US2876436A (en) | 1959-03-03 |
CH352003A (de) | 1961-02-15 |
DE1026791B (de) | 1958-03-27 |
FR1165176A (fr) | 1958-10-20 |