BE549320A - - Google Patents

Info

Publication number
BE549320A
BE549320A BE549320DA BE549320A BE 549320 A BE549320 A BE 549320A BE 549320D A BE549320D A BE 549320DA BE 549320 A BE549320 A BE 549320A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE549320A publication Critical patent/BE549320A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/965Shaped junction formation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE549320D 1955-09-02 BE549320A (US07223432-20070529-C00017.png)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US53232455A 1955-09-02 1955-09-02
US698874A US3088856A (en) 1955-09-02 1957-11-25 Fused junction semiconductor devices
US698494A US2854366A (en) 1955-09-02 1957-11-25 Method of making fused junction semiconductor devices

Publications (1)

Publication Number Publication Date
BE549320A true BE549320A (US07223432-20070529-C00017.png)

Family

ID=27415088

Family Applications (1)

Application Number Title Priority Date Filing Date
BE549320D BE549320A (US07223432-20070529-C00017.png) 1955-09-02

Country Status (6)

Country Link
US (2) US3088856A (US07223432-20070529-C00017.png)
BE (1) BE549320A (US07223432-20070529-C00017.png)
CH (1) CH356210A (US07223432-20070529-C00017.png)
FR (1) FR1154894A (US07223432-20070529-C00017.png)
GB (1) GB809521A (US07223432-20070529-C00017.png)
NL (2) NL102391C (US07223432-20070529-C00017.png)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE562490A (US07223432-20070529-C00017.png) * 1956-03-05 1900-01-01
US3187241A (en) * 1957-03-27 1965-06-01 Rca Corp Transistor with emitter at bottom of groove extending crosswise the base
US2967985A (en) * 1957-04-11 1961-01-10 Shockley Transistor structure
US3054033A (en) * 1957-05-21 1962-09-11 Sony Corp Junction type semiconductor device
US3041226A (en) * 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
US2974072A (en) * 1958-06-27 1961-03-07 Ibm Semiconductor connection fabrication
US2937963A (en) * 1958-07-14 1960-05-24 Int Rectifier Corp Temperature compensating zener diode construction
US2986481A (en) * 1958-08-04 1961-05-30 Hughes Aircraft Co Method of making semiconductor devices
NL241982A (US07223432-20070529-C00017.png) * 1958-08-13 1900-01-01
US3225416A (en) * 1958-11-20 1965-12-28 Int Rectifier Corp Method of making a transistor containing a multiplicity of depressions
US3009841A (en) * 1959-03-06 1961-11-21 Westinghouse Electric Corp Preparation of semiconductor devices having uniform junctions
US3143443A (en) * 1959-05-01 1964-08-04 Hughes Aircraft Co Method of fabricating semiconductor devices
US3154692A (en) * 1960-01-08 1964-10-27 Clevite Corp Voltage regulating semiconductor device
NL278654A (US07223432-20070529-C00017.png) * 1961-06-08
US3220896A (en) * 1961-07-17 1965-11-30 Raytheon Co Transistor
US3254276A (en) * 1961-11-29 1966-05-31 Philco Corp Solid-state translating device with barrier-layers formed by thin metal and semiconductor material
US3240601A (en) * 1962-03-07 1966-03-15 Corning Glass Works Electroconductive coating patterning
GB927380A (en) * 1962-03-21 1963-05-29 Mullard Ltd Improvements in or relating to solders
US3258660A (en) * 1962-06-20 1966-06-28 Tunnel diode devices with junctions formed on predetermined paces
US3163916A (en) * 1962-06-22 1965-01-05 Int Rectifier Corp Unijunction transistor device
BE635380A (US07223432-20070529-C00017.png) * 1962-07-24
CH427042A (de) * 1963-09-25 1966-12-31 Licentia Gmbh Halbleiterbauelement mit einem Halbleiterkörper aus drei oder mehr Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps
US3386864A (en) * 1963-12-09 1968-06-04 Ibm Semiconductor-metal-semiconductor structure
US3416979A (en) * 1964-08-31 1968-12-17 Matsushita Electric Ind Co Ltd Method of making a variable capacitance silicon diode with hyper abrupt junction
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits
US3322581A (en) * 1965-10-24 1967-05-30 Texas Instruments Inc Fabrication of a metal base transistor
US3423651A (en) * 1966-01-13 1969-01-21 Raytheon Co Microcircuit with complementary dielectrically isolated mesa-type active elements
US3407343A (en) * 1966-03-28 1968-10-22 Ibm Insulated-gate field effect transistor exhibiting a maximum source-drain conductance at a critical gate bias voltage
US3535176A (en) * 1968-12-19 1970-10-20 Mallory & Co Inc P R Surface conditioning of silicon for electroless nickel plating
NL7013227A (US07223432-20070529-C00017.png) * 1970-09-08 1972-03-10 Philips Nv
DE2332822B2 (de) * 1973-06-28 1978-04-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen von diffundierten, kontaktierten und oberflächenpassivierten Halbleiterbauelementen aus Halbleiterscheiben aus Silizium
US6197983B1 (en) * 1996-09-05 2001-03-06 The Regents Of The University Of Michigan Germanes and doping with germanes
AU7359296A (en) * 1996-09-05 1998-03-26 University Of Michigan, The Germanes and doping with germanes
US11387373B2 (en) * 2019-07-29 2022-07-12 Nxp Usa, Inc. Low drain-source on resistance semiconductor component and method of fabrication

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE520380A (US07223432-20070529-C00017.png) * 1952-06-02
US2750542A (en) * 1953-04-02 1956-06-12 Rca Corp Unipolar semiconductor devices
BE529698A (US07223432-20070529-C00017.png) * 1953-06-19
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
US2846346A (en) * 1954-03-26 1958-08-05 Philco Corp Semiconductor device
USRE25633E (en) * 1954-09-29 1964-08-25 Process for making fused junction
BE544843A (US07223432-20070529-C00017.png) * 1955-02-25
US2820135A (en) * 1956-09-05 1958-01-14 Pacific Semiconductors Inc Method for producing electrical contact to semiconductor devices

Also Published As

Publication number Publication date
NL209275A (US07223432-20070529-C00017.png)
CH356210A (fr) 1961-08-15
FR1154894A (fr) 1958-04-17
GB809521A (en) 1959-02-25
NL102391C (US07223432-20070529-C00017.png)
US3088856A (en) 1963-05-07
US2854366A (en) 1958-09-30

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