BE532224A - - Google Patents

Info

Publication number
BE532224A
BE532224A BE532224DA BE532224A BE 532224 A BE532224 A BE 532224A BE 532224D A BE532224D A BE 532224DA BE 532224 A BE532224 A BE 532224A
Authority
BE
Belgium
Prior art keywords
current
wire
sep
semiconductor
electrode
Prior art date
Application number
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE532224A publication Critical patent/BE532224A/fr
Priority claimed from GB27064/53A external-priority patent/GB747198A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
BE532224D 1953-10-02 BE532224A (cs)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
BE514778T
GB27064/53A GB747198A (en) 1953-10-02 1953-10-02 Improvements in or relating to electric semiconductor devices

Publications (1)

Publication Number Publication Date
BE532224A true BE532224A (cs)

Family

ID=25662042

Family Applications (1)

Application Number Title Priority Date Filing Date
BE532224D BE532224A (cs) 1953-10-02

Country Status (1)

Country Link
BE (1) BE532224A (cs)

Similar Documents

Publication Publication Date Title
US9276143B2 (en) Silicon-based visible and near-infrared optoelectric devices
FR2477771A1 (fr) Procede pour la realisation d'un dispositif semiconducteur a haute tension de blocage et dispositif semiconducteur ainsi realise
CH343534A (fr) Redresseur électrique à cristal
FR2593966A1 (fr) Structure semi-conductrice monolithique d'un transistor bipolaire a heterojonction et d'un laser
FR2548452A1 (fr) Dispositif a couche mince, notamment transistor
EP2149919A1 (fr) Diode électroluminescente en matériau semiconducteur et son procédé de fabrication
FR2517888A1 (fr) Dispositif a semi-conducteur comportant une structure de grille associee a une jonction de faible profondeur
FR2666932A1 (fr) Dispositif semi-conducteur presentant une haute tension de claquage et une faible resistance et procede pour sa fabrication.
EP0006983B1 (fr) Transistor à tension d'avalanche commandée pouvant être sensible à un champ magnétique
EP0368768B1 (fr) Procédé de fabrication d'une diode rapide et diode rapide obtenue par ce procédé
FR2516307A1 (fr) Dispositif semiconducteur pour l'emission d'electrons et dispositif muni d'un tel dispositif semiconducteur
EP0045678A2 (fr) Source laser à jonction semiconductrice utilisant des diodes Schottky, et procédé de fabrication
FR2649530A1 (fr) Brin supraconducteur multifilamentaire
FR2468208A1 (fr) Dispositif semiconducteur avec une diode zener
FR2497402A1 (fr) Procede de fabrication de jonctions p-n par electromigration
BE532224A (cs)
EP0191697A1 (fr) Procédé de réalisation d'un détecteur photoélectrique du type photorésistance de grande sensibilité
FR2759491A1 (fr) Cathode froide a emission de champ et son procede de fabrication
EP0316230A1 (fr) Dispositif à semiconducteur organique à base de phtalocyanine
FR2839204A1 (fr) Dispositif metal-oxyde-silicium comprenant une structure d'oxyde a l'echelle du nanometre.
EP0697710B1 (fr) Procédé de fabrication d'une source d'électrons à micropointes
EP0069634A2 (fr) Diode Zener compensée en température et stable sous irradiation et procédé de fabrication d'une telle diode
FR2897718A1 (fr) Structure de cathode a nanotubes pour ecran emissif
CA2129354A1 (fr) Procede de realisation sur silicium, de cathodes emissives a micropointes, pour ecran plat de petites dimensions, et produits obtenus
EP0011021B1 (fr) Procédé de réalisation de composants semi-conducteurs présentant des propriétés de conversion optoélectroniques