BE525832A - - Google Patents
Info
- Publication number
- BE525832A BE525832A BE525832DA BE525832A BE 525832 A BE525832 A BE 525832A BE 525832D A BE525832D A BE 525832DA BE 525832 A BE525832 A BE 525832A
- Authority
- BE
- Belgium
- Prior art keywords
- emitter
- collector
- source
- emi
- base
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 74
- 230000005684 electric field Effects 0.000 claims description 13
- 238000004804 winding Methods 0.000 claims description 8
- 230000005686 electrostatic field Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 5
- 238000005421 electrostatic potential Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000000969 carrier Substances 0.000 description 59
- 230000007423 decrease Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000003574 free electron Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1095877XA | 1953-01-19 | 1953-01-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE525832A true BE525832A (enExample) |
Family
ID=22328471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE525832D BE525832A (enExample) | 1953-01-19 |
Country Status (3)
| Country | Link |
|---|---|
| BE (1) | BE525832A (enExample) |
| FR (1) | FR1095877A (enExample) |
| NL (1) | NL184455C (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1042128B (de) * | 1955-11-12 | 1958-10-30 | Siemens Ag | Doppelbasistransistor zum Erzeugen von Schalt- oder Kippvorgaengen |
| NL213944A (enExample) * | 1956-01-23 | |||
| BE555973A (enExample) * | 1956-03-21 |
-
0
- NL NLAANVRAGE7415887,A patent/NL184455C/xx active
- BE BE525832D patent/BE525832A/fr unknown
-
1954
- 1954-01-19 FR FR1095877D patent/FR1095877A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL184455C (nl) | |
| FR1095877A (fr) | 1955-06-07 |
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