NL83838C
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1952-12-01 |
1957-01-15 |
|
|
US2838617A
(en)
*
|
1953-01-13 |
1958-06-10 |
Philips Corp |
Circuit-arrangement comprising a four-zone transistor
|
BE526156A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1953-02-02 |
|
|
|
US2976426A
(en)
*
|
1953-08-03 |
1961-03-21 |
Rca Corp |
Self-powered semiconductive device
|
US2894150A
(en)
*
|
1953-10-07 |
1959-07-07 |
Avco Mfg Corp |
Transistor signal translating circuit
|
US2941070A
(en)
*
|
1954-06-01 |
1960-06-14 |
Hazeltine Research Inc |
Constantly forward biased non-linear element across detector input for controlling gain automatically
|
US2921205A
(en)
*
|
1954-07-29 |
1960-01-12 |
Rca Corp |
Semiconductor devices with unipolar gate electrode
|
US3036226A
(en)
*
|
1958-12-15 |
1962-05-22 |
Ibm |
Negative resistance semiconductor circuit utilizing four-layer transistor
|
US2895058A
(en)
*
|
1954-09-23 |
1959-07-14 |
Rca Corp |
Semiconductor devices and systems
|
US2928049A
(en)
*
|
1954-09-30 |
1960-03-08 |
Ibm |
Transistor amplifier circuit
|
US2866858A
(en)
*
|
1954-11-08 |
1958-12-30 |
Rca Corp |
Wide band signal amplifier circuit
|
DE1080691B
(de)
*
|
1955-05-18 |
1960-04-28 |
Ibm Deutschland |
Transistor mit einem Halbleiterkoerper mit einer P- und einer N-Zone, die sich in einem PN-UEbergang beruehren, und mit einem Hook-Kollektor
|
US3193737A
(en)
*
|
1955-05-18 |
1965-07-06 |
Ibm |
Bistable junction transistor
|
US2846592A
(en)
*
|
1955-05-20 |
1958-08-05 |
Ibm |
Temperature compensated semiconductor devices
|
US2820199A
(en)
*
|
1955-05-25 |
1958-01-14 |
Philips Corp |
Push-pull modulator
|
US2895109A
(en)
*
|
1955-06-20 |
1959-07-14 |
Bell Telephone Labor Inc |
Negative resistance semiconductive element
|
US2905836A
(en)
*
|
1955-07-27 |
1959-09-22 |
Rca Corp |
Semiconductor devices and systems
|
NL99632C
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1955-11-22 |
|
|
|
DE1075746B
(de)
*
|
1955-12-02 |
1960-02-18 |
Texas Instruments Incorporated, Dallas, Tex. (V. St. A.) |
Vorrichtung zur Temperaturkompensation eines Flächentransistors
|
BE554033A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1956-01-09 |
|
|
|
US2889417A
(en)
*
|
1956-01-26 |
1959-06-02 |
Honeywell Regulator Co |
Tetrode transistor bias circuit
|
US2912598A
(en)
*
|
1956-03-29 |
1959-11-10 |
Shockley Transistor Corp |
Shifting register
|
BE556305A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1956-04-18 |
|
|
|
US2967952A
(en)
*
|
1956-04-25 |
1961-01-10 |
Shockley William |
Semiconductor shift register
|
US2869084A
(en)
*
|
1956-07-20 |
1959-01-13 |
Bell Telephone Labor Inc |
Negative resistance semiconductive device
|
US2945134A
(en)
*
|
1956-09-14 |
1960-07-12 |
Norman F Moody |
Bistable semiconductor circuit
|
US2944165A
(en)
*
|
1956-11-15 |
1960-07-05 |
Otmar M Stuetzer |
Semionductive device powered by light
|
NL224173A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1957-01-18 |
|
|
|
US2980805A
(en)
*
|
1957-02-11 |
1961-04-18 |
Norman F Moody |
Two-state apparatus
|
US3141119A
(en)
*
|
1957-03-28 |
1964-07-14 |
Westinghouse Electric Corp |
Hyperconductive transistor switches
|
US2939967A
(en)
*
|
1957-04-04 |
1960-06-07 |
Avco Mfg Corp |
Bistable semiconductor circuit
|
BE564376A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1957-04-23 |
|
|
|
BE564377A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1957-04-23 |
|
|
|
US2896094A
(en)
*
|
1957-04-29 |
1959-07-21 |
Norman F Moody |
Monostable two-state apparatus
|
US3162770A
(en)
*
|
1957-06-06 |
1964-12-22 |
Ibm |
Transistor structure
|
BE571550A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1957-09-27 |
|
|
|
NL240386A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1958-06-25 |
1900-01-01 |
|
|
US3092757A
(en)
*
|
1958-08-01 |
1963-06-04 |
Forbro Design Inc |
Circuit means for preventing spike or surges at the output of a power supply
|
US2998534A
(en)
*
|
1958-09-04 |
1961-08-29 |
Clevite Corp |
Symmetrical junction transistor device and circuit
|
DE1130079B
(de)
*
|
1958-10-24 |
1962-05-24 |
Texas Instruments Inc |
Halbleiterbauelement zum Schalten mit einem Halbleiterkoerper aus drei Zonen abwechselnden Leitfaehigkeitstyps
|
US3207962A
(en)
*
|
1959-01-02 |
1965-09-21 |
Transitron Electronic Corp |
Semiconductor device having turn on and turn off gain
|
US2997604A
(en)
*
|
1959-01-14 |
1961-08-22 |
Shockley William |
Semiconductive device and method of operating same
|
NL247747A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1959-01-27 |
|
|
|
US3140438A
(en)
*
|
1959-05-08 |
1964-07-07 |
Clevite Corp |
Voltage regulating semiconductor device
|
US3065360A
(en)
*
|
1959-05-19 |
1962-11-20 |
Lucio M Vallese |
Transistor thyratron circuit employing grounded-emitter silicon controlled rectifieror equivalent
|
NL264084A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1959-06-23 |
|
|
|
US3040194A
(en)
*
|
1959-07-02 |
1962-06-19 |
Gen Precision Inc |
Bistable circuit utilizing pnpn diode in series with transistor
|
US3176147A
(en)
*
|
1959-11-17 |
1965-03-30 |
Ibm |
Parallel connected two-terminal semiconductor devices of different negative resistance characteristics
|
US3196330A
(en)
*
|
1960-06-10 |
1965-07-20 |
Gen Electric |
Semiconductor devices and methods of making same
|
US3202832A
(en)
*
|
1960-06-17 |
1965-08-24 |
Transitron Electronic Corp |
Controllable semiconductor device
|
US3197652A
(en)
*
|
1960-06-17 |
1965-07-27 |
Transitron Electronic Corp |
Controllable semiconductor devices
|
US3212033A
(en)
*
|
1960-10-25 |
1965-10-12 |
Westinghouse Electric Corp |
Integrated circuit semiconductor narrow band notch filter
|
US3199001A
(en)
*
|
1960-12-08 |
1965-08-03 |
Microtronics Inc |
Temperature stable transistor device
|
US3189753A
(en)
*
|
1961-04-04 |
1965-06-15 |
Nippon Electric Co |
Negative conductance switch circuit
|
US3210560A
(en)
*
|
1961-04-17 |
1965-10-05 |
Westinghouse Electric Corp |
Semiconductor device
|
DE1144849B
(de)
*
|
1961-07-21 |
1963-03-07 |
Ass Elect Ind |
Steuerbarer Halbleitergleichrichter mit pnpn-Struktur
|
US3270235A
(en)
*
|
1961-12-21 |
1966-08-30 |
Rca Corp |
Multi-layer semiconductor electroluminescent output device
|
US3244949A
(en)
*
|
1962-03-16 |
1966-04-05 |
Fairchild Camera Instr Co |
Voltage regulator
|
US3243602A
(en)
*
|
1962-12-13 |
1966-03-29 |
Gen Electric |
Silicon controlled gate turn off switch circuit with load connected to interior junction
|
GB1053834A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1963-02-01 |
|
|
|
US3307049A
(en)
*
|
1963-12-20 |
1967-02-28 |
Siemens Ag |
Turnoff-controllable thyristor and method of its operation
|
US3290551A
(en)
*
|
1964-03-23 |
1966-12-06 |
Burroughs Corp |
Memory circuit for indicator devices employing four-electrode, four-layer semiconductor switch
|
US3284681A
(en)
*
|
1964-07-01 |
1966-11-08 |
Gen Electric |
Pnpn semiconductor switching devices with stabilized firing characteristics
|
US3404295A
(en)
*
|
1964-11-30 |
1968-10-01 |
Motorola Inc |
High frequency and voltage transistor with added region for punch-through protection
|
US3480802A
(en)
*
|
1966-11-16 |
1969-11-25 |
Westinghouse Electric Corp |
High power semiconductor control element and associated circuitry
|
SE392783B
(sv)
*
|
1975-06-19 |
1977-04-18 |
Asea Ab |
Halvledaranordning innefattande en tyristor och en felteffekttransistordel
|
US5012317A
(en)
*
|
1986-04-11 |
1991-04-30 |
Texas Instruments Incorporated |
Electrostatic discharge protection circuit
|
JP3375659B2
(ja)
*
|
1991-03-28 |
2003-02-10 |
テキサス インスツルメンツ インコーポレイテツド |
静電放電保護回路の形成方法
|
PL442428A1
(pl)
|
2022-09-30 |
2024-04-02 |
Instytut Wysokich Ciśnień Polskiej Akademii Nauk |
Tyrystor przełączany światłem i sposób wytwarzania takiego tyrystora
|